IRF840I

IRF840I RoHS-compliant Product Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 0.85Ω 8A S Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 500 ±20 8 5.1 32 35 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 320 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 3.6 65 Unit ℃/W ℃/W 201024071-1/4 Data & specifications subject to change without notice IRF840I Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o o Test Conditions VGS=0V, ID=1mA 3 Min. 500 2 - Typ. 4.2 45 7 25 12 31 48 33 270 85 1.6 Max. Units 0.85 4 25 250 ±100 72 2.4 V Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS=10V, ID=4.8A VDS=VGS, ID=250uA VDS=10V, ID=4.8A VDS=500V, VGS=0V VDS=400V, VGS=0V VGS=±20V ID=8A VDS=400V VGS=10V VDD=250V ID=8A RG=9.1Ω,VGS=10V RD=31Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 3 1250 2000 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Tj=25℃, IS=8A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/µs Min. - Typ. 515 8.6 Max. Units 1.5 V ns uC trr Qrr Notes: Reverse Recovery Time Reverse Recovery Charge 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω 3.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 IRF840I 16 8 T C =25 C o 10V 7.0V ID , Drain Current (A) 6 T C =150 o C 10V 7 .0V 6 .0V 12 ID , Drain Current (A) 6.0V 8 5 .0 V 4 V G = 4. 5 V 2 4 5.0V V G =4.5V 0 0 4 8 12 16 20 24 0 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 I D =4.8A V G =10V Normalized BVDSS (V) 1.1 Normalized RDS(ON) 2 1 1 0.9 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 10 1.4 Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 1.2 T j = 150 o C 6 T j = 25 o C Normalized VGS(th) (V) 1 IS (A) 4 0.8 2 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 IRF840I f=1.0MHz 12 10000 I D =8A 10 VGS , Gate to Source Voltage (V) 8 V DS =100V V DS =250V V DS =400V C (pF) 1000 C iss 6 C oss 100 4 C rss 2 0 0 10 20 30 40 50 60 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 100us 1ms Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 ID (A) 0.1 1 10ms 100m 1s 0.1 0.05 PDM t T 0.02 0.1 T c =25 C Single Pulse o DC 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 10 100 1000 0.01 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E A SYMBOLS Millimeters MIN NOM MAX c2 φ A A1 4.50 2.30 0.50 0.95 0.45 2.30 9.70 2.91 ------- 4.70 2.65 0.70 1.20 0.65 2.60 3.41 3.20 2.54 4.90 3.00 0.90 1.50 0.80 2.90 3.91 ------- b b1 c c2 E L4 L3 L4 10.00 10.40 14.70 15.40 16.10 φ e L3 b1 A1 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. b c e Part Marking Information & Packing : TO-220CFM LOGO r Part Number IRF840I YWWSSS Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence