AAT1118/A/B
Details are subject to change without notice.
ADJUSTABLE TRIPLE-CHANNEL TFT LCD DC-DC CONVERTER
Features
Built in 1.6A, 0.2 Switching NMOS Fault and Thermal Protection Internal Soft-Start Function Internal Power Up Sequencing Dual Adjustable Charge Pump Output Positive Output to 40V Negative Output to − 40V
Power Good Output TSSOP-16 Package
General Description
The AAT1118/A/B is an adjustable triple-channel TFT LCD DC-DC converter that provides one current mode PWM, one positive charge pump and one negative charge pump. Built-in functions include soft-start and power up sequencing. When power is turned on, soft-start avoids inrush current. Power up sequencing feature provides compensation for LCD panel to maintain a smooth voltage during a turn-on cycle. The DC-DC converter consists of an on-chip voltage reference, error amplifier, current sense, pulse width modulation controller, under-voltage lockout protection, thermal detect, soft-start, and fault protection circuit. When the two charge pumps are in operation, the
GND1 SW GND2
Pin Configuration (Top View)
PGO IN1 EO
1 2 3 4 5 6 7 8 16 15
output voltage would be doubled and the generated VP3 and VP2 (Note 1) could switch on or off TFT gate. With the minimal external components, the AAT1118/A/B offers a simple and economical solution for TFT LCD power.
VDD
GND
AAT1118/A/B AAT1118/A/B
14 13 12 11 10 9
VDD2 / VCH3
OUT3
VREF
IN3 IN2
VDD1
OUT2 SHDN
Note 1: Please refer to page 13 and 14 for VP3 and VP2.
(TSSOP-16 Package)
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AAT1118/A/B
Pin Description PIN NO. NAME I/O
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 PGO IN1 EO O I I O I I I O O O O HV Switch Output Inverting Input Pin of PWM Error Amplifier Output Pin of PWM Error Amplifier Power Supply Ground Reference Voltage Output Charge Pump Channel 3 Feedback Input Charge Pump Channel 2 Feedback Input Shutdown Control Pin; High for Enable Charge Pump Channel 2 Output High Voltage Power Supply Charge Pump Channel 3 Output High Voltage Power Supply Power Output for Channel 3 (AAT1118B Only) Ground Switch Pin SW MOS Ground
DESCRIPTION
VDD
GND VREF IN3 IN2 SHDN OUT2
VDD1
OUT3 VDD2 VCH3 GND2 SW GND1
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AAT1118/A/B
Absolute Maximum Ratings
PARAMETER SYMBOL VALUE
7 18 16 VDD +0.3
UNIT
V V V V V V
VDD to GND
SW to GND VDD1 , VDD2 to GND Input Voltage 1 (IN1, IN2, IN3, SHDN) Output Voltage 1 (EO, VREF ) Output Voltage 2 (OUT2, OUT3, SW, PGO) Operating Free-Air Temperature Range Storage Temperature Range Power Dissipation
VDD
VSW VDDH V I1 VO1 VO2 TC
VDD +0.3
VDDH +0.3
− 40 to + 85 − 45 to + 125
C
C mW
Tstorage
Pd
750
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AAT1118/A/B
Electrical Characteristics, VDD= 3.3V, VDDH= 10V Operating Power
PARAMETER Input Supply Voltage Range
VDD Under Voltage Lockout
SYMBOL VDD
VUVLO
TEST CONDITION
Falling Rising
MIN TYP MAX UNIT 5.5 V 2.6 2.1 2.2 2.3 V 2.3 2.4 2.5 V
6 14 0.5 3 0.1 160 0.8 6 10.0 V mA mA
Regulated Output Voltage Range Quiescent Current Shutdown Current Thermal Shutdown
VP1
I VDD I SHDN VIN1 =1.3V, not switching VIN1 =1.1V, switching VSHDN =GND
A
C
Reference Voltage PARAMETER Reference Voltage
Line Regulation Load Regulation
SYMBOL TEST CONDITION VREF IVref = 100µA IVref = 100µA, VRI VDD =2.5V~5V
VRO IVref = 0~100µA
MIN TYP MAX UNIT 1.238 1.250 1.262 V
-
2
1
5
5
mV
mV
EA (Error Amplifier)
PARAMETER
Feedback Voltage Input Bias Current Feedback-Voltage Line Regulation Transconductance Voltage Gain
Fault Detect Trigger Voltage
SYMBOL
VIN1
TEST CONDITION
ł VEO = ˜ ` ¯ ˙ Ø VIN1=1.24V ł ł ‡ ‡‡ VEO ‡= ˜ ` ¯ ˙ Ø ‡‡ ł
MIN
TYP MAX UNIT
V
1.238 1.250 1.262 0 ł‡ 0.05 105
1,500 1.07 1.10 1.14
I B1
VRI
40 0.15 240
nA
% /V
gm
AV VFI
¯ ` ØVDD ‡‡ ˇ ‡ ¨ ` ¨ Ø ‡ˇ I=5 A 70
‡ ‡
A /V
V /V V
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AAT1118/A/B
Electrical Characteristics, VDD= 3.3V, VDDH= 10V Oscillator
PARAMETER
SYMBOL
f OSC D MAX
TEST CONDITION
MIN
1,100 79
TYP
1,320 85
MAX
1,600 92
UNIT
kHz %
Oscillation Frequency Maximum Duty Cycle
N-Channel Switch
PARAMETER
Current Limit On-Resistance Leakage Current
SYMBOL
I LIM R ON I SWOFF
TEST CONDITION
I SW =1.2A VSW =12V
MIN
1.1
TYP
1.6 0.28 0.01
MAX
2.1 0.50 20.00
UNIT
A Ł A
Control Inputs Characteristics
PARAMETER
Input Low Voltage Input High Voltage Hysteresis SHDN Pull Up Current
SYMBOL
VIL
TEST CONDITION
MIN
TYP
MAX 0.3 VDD
UNIT
V V
VIH
VHYS
0.7 VDD 0.1 VDD ‡ 0.001 1.000
V
I PH
A
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AAT1118/A/B
Electrical Characteristics, VDD= 3.3V, VDDH= 10V Soft Start & Fault Detect Time
PARAMETER
Channel 1 Soft Start Time Channel 2 Soft Start Time Channel 3 Soft Start Time Channel 1 to Channel 2 Delay Channel 2 to Channel 3 Delay During Fault Protect Trigger Time IN1 Fault Protection Voltage IN2 Fault Protection Voltage IN3 Fault Protection Voltage
SYMBOL
t SS1 t SS2 t SS3
TEST CONDITION
MIN
TYP
14 3.5 3.5
MAX
UNIT
ms ms ms ms ms ms
t D12
t D23 t FP VF1
AAT1118A AAT1118B ‡ ‡ ‡ 1.05 0.08 1.05
7 10.5 83 1.10 0.13 1.10 1.15 0.18 1.15
V V V‡
VF2
VF3
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AAT1118/A/B
Electrical Characteristics, VDD= 3.3V, VDDH= 10V Charge Pump Regulator Characteristics
PARAMETER VDD1 Input Supply Range VDD2 Input Supply Range
IN2 Threshold Voltage IN3 Threshold Voltage IN2 Input Bias Current IN3 Input Bias Current Charge Pump Frequency OUT2 Switch R-on
SYMBOL
TEST CONDITION
MIN
6 6
TYP
MAX
15 15
UNIT
V V mV V
VDD1
VDD2 IN2 IN3
− 50
1.20 VIN2= − 0.05V V IN3= − 1.5V ‡ ‡
‡
0 1.25
50 1.30 50 50
I B2
I B3 f OSCP
R ONP2 R ONN2 R ONP3
− 50 − 50
540 640 3 3 3 3
nA nA
kHz Ł Ł‡ Ł Ł‡ ‡
740 20 20 20 20 30
‡
‡
OUT3 Switch R-on Continuous Output Current
R
ONN3
I OUT
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AAT1118/A/B
BLOCK DIAGRAM AAT1118/A
EO Error Amplifier Comparator Bandgap Bandgap & Soft Start Control Logic SHDN Thermal SHDN
VDD
SHDN SW
IN1
VREF
PGO
1.24v
Driver
Clock
GND1 Slope Compensation Current sense GND
Oscillator
OSC
VDD2
EN3 OUT3 OSC IN1 Power Up Sequence Fault Detect
EN1 EN2
VDD1
OSC
OUT2
GND2
1.24v
IN3
IN2
GND2
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AAT1118/A/B
BLOCK DIAGRAM AAT1118B
EO Error Amplifier Comparator Bandgap Bandgap & Soft Start Control Logic SHDN Thermal SHDN
VDD
SHDN SW
IN1
VREF
PGO
1.24v
Driver
Clock
GND1 Slope Compensation Current sense GND
Oscillator
OSC
VDD2
EN3 OUT3 OSC IN1 Power Up Sequence Fault Detect
EN1 EN2
VDD1
OSC
OUT2
GND2
1.24v
IN3
IN2
GND2
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AAT1118/A/B
Typical Operating Characteristics (VIN = 3.3V, TC = +25°C, unless otherwise noted.)
10.04 10.02 10 9.98 9.96 9.94 9.92 9.9 9.88 9.86 9.84 0 100 200 300 400 500 600 700 800
95 90 85 80 75 70 65 0 100 200 300 400 500
100
90
100 95 90 85 80
85 80 75 70
75 70 65 0 100 200 300 400 500
65 60 0 50 100 150 200 250 300 350
-5.8
55
-5.85
50 45
-5.9
40
-5.95
35 30 25
-6
-6.05 0 5 10 15 20 25 30 35 40
20 0 5 10 15 20 25 30 35 40
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AAT1118/A/B
Typical Operating Characteristics (Continued) (VIN = 3.3V, TC = +25°C, unless otherwise noted.)
18.05 18 17.95 17.9 17.85
80 75 70 65 60 55
17.8 17.75 17.7 0 2 4 6 8 10 12 14 16 18 20
50 45 40 0 2 4 6 8 10 12 14 16 18 20
1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 2.5 3 3.5 4 4.5 5 5.5
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AAT1118/A/B
Typical Operating Characteristics (Continued) (VIN = 3.3V, TC = +25°C, unless otherwise noted.)
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AAT1118/A/B
Application Circuit AAT1118/A
VP1
IN1 EO
VDD SW VP1
SHDN
AAT1118/A
SHDN OUT2 VP1
VP2
VP2
PGO
VDD1 VDD2
IN2 OUT3 VP3 VREF
IN3 GND1 GND GND2
VP3
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AAT1118/A/B
Application Circuit AAT1118B
VP1 VDD SW VP1
IN1 EO
SHDN
AAT1118B
SHDN OUT2
VP2
VP2
PGO
VDD1 VCH3
VP1
IN2 OUT3 VP3 VREF
IN3 GND1 GND GND2
VP3
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AAT1118/A/B
Timing Chart AAT1118
V
DD
SHDN
90%
V V
9V 0V
P1
P2
-8V 25V
V
P3
0V
14ms Max. 3.5ms 3.5ms
PGO
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AAT1118/A/B
Timing Chart AAT1118A
V
DD
SHDN V V 9V 0V
P2 P1
-8V 25V
V
P3
0V
14ms Max 7m s 3.5ms 3.5ms
PGO
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AAT1118/A/B
Timing Chart AAT1118B ! ! !V ! DD !SHDN ! ! !VP1 ! ! !V P2 ! ! ! ! ! !V
P3
90%
9V 0V -8V 25V
14ms Max 3.5ms
10.5ms 3.5ms
0V
PGO
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AAT1118/A/B
Package Dimension
16-Pin TSSOP !
! ! ł ‡ ‡ łł ł ‡‡ ‡ ßł
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