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AAT4250IJS-T1

AAT4250IJS-T1

  • 厂商:

    AAT

  • 封装:

  • 描述:

    AAT4250IJS-T1 - Slew Rate Controlled Load Switch - Advanced Analog Technology, Inc.

  • 数据手册
  • 价格&库存
AAT4250IJS-T1 数据手册
AAT4250 Slew Rate Controlled Load Switch General Description The AAT4250 SmartSwitch is a member of AnalogicTech’s Application Specific Power MOSFET™ (ASPM™) product family. It is a slew rate controlled P-channel MOSFET power switch designed for high-side load switching applications. This switch operates with an input voltage range from 1.8V to 5.5V, making it ideal for 2.5V, 3.3V, or 5V systems. The part features 1.5ms turn-on and 10µs turn-off time. The AAT4250 has an undervoltage lockout which turns off the switch when an under-voltage condition exists. Input logic levels are TTL compatible. The quiescent supply current is very low, typically 2µA. In shutdown mode, the supply current is typically reduced to 0.1µA or less. The AAT4250 is available in a Pb-free, 5-pin SOT23 (SOT25) package or a Pb-free, 8-pin SC70JW package and is specified over the -40°C to +85°C temperature range. Features • • • SmartSwitch™ • • • • 1.8V to 5.5V Input Voltage Range 120mΩ (5V) Typical RDS(ON) Low Quiescent Current: • Typical 2µA • Typical 0.1µA with Enable Off Only 2.0V Needed for ON/OFF Control Temperature Range: -40°C to +85°C 5kV ESD Rating SOT23-5 or SC70JW-8 Package Applications • • • Hot Swap Supplies Notebook Computers Personal Communication Devices Typical Application INPUT IN OUT OUTPUT AAT4250 CIN 1µF ON ON/OFF GND COUT 0.1µF GND GND 4250.2006.03.1.3 1 AAT4250 Slew Rate Controlled Load Switch Pin Descriptions Pin # SOT23-5 SC70JW-8 Symbol OUT GND N/C ON/OFF IN Function P-channel MOSFET drain. Ground connection. Not internally connected. Active-high enable input. Logic high turns the switch on. P-channel MOSFET source. 1 2 3 4 5 1 2, 3, 4, 5 N/A 6 7, 8 Pin Configuration SOT23-5 (SOT25) (Top View) OUT GND N/C 1 5 IN 2 3 4 ON/OFF SC70JW-8 (Top View) OUT GND GND GND 1 2 3 4 8 7 6 5 IN IN ON/OFF GND 2 4250.2006.03.1.3 AAT4250 Slew Rate Controlled Load Switch Absolute Maximum Ratings1 TA = 25°C, unless otherwise noted. Symbol VIN VON VOUT IMAX IDM TJ TLEAD VESD Description IN to GND ON/OFF to GND OUT to GND Maximum Continuous Switch Current Maximum Pulsed Current Operating Junction Temperature Range Maximum Soldering Temperature (at leads) ESD Rating2 - HBM IN ≥ 2.5V IN < 2.5V Value -0.3 to 6 -0.3 to 6 -0.3 to VIN + 0.3 1.7 4 2 -40 to 150 300 5000 Units V V V A A °C °C V Thermal Characteristics3 Symbol ΘJA PD Description Thermal Resistance Power Dissipation Value 150 667 Units °C/W mW 1. Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional operation at conditions other than the operating conditions specified is not implied. Only one Absolute Maximum Rating should be applied at any one time. 2. Human body model is a 100pF capacitor discharged through a 1.5kΩ resistor into each pin. 3. Mounted on an AAT4250 demo board in still 25ºC air. 4250.2006.03.1.3 3 AAT4250 Slew Rate Controlled Load Switch Electrical Characteristics VIN = 5V, TA = -40°C to +85°C, unless otherwise noted. Typical values are TA = 25°C. Symbol VIN IQ IQ(OFF) ISD(OFF) VUVLO VUVLO(hys) RDS(ON) TCRDS VIL VIH ISINK TD TDOFF Description Operation Voltage Quiescent Current Off Supply Current Off Switch Current Under-Voltage Lockout Under-Voltage Lockout Hysteresis On Resistance On Resistance Temperature Coefficient ON/OFF Input Logic Low Voltage ON/OFF Input Logic High Voltage ON Input Leakage Output Turn-On Delay Time Turn-Off Delay Time Conditions VIN = 5V, ON/OFF = VIN, IOUT = 0 ON/OFF = GND, VIN = 5V, OUT Open ON/OFF = GND, VIN = 5V, VOUT = 0 VIN Falling Min 1.81 Typ 2 0.1 1.5 250 Max 5.5 4 1 1 1.8 Units V µA µA µA V mV 1.0 VIN = 5V, TA = 25°C VIN = 3V, TA = 25°C VIN = 1.8V 120 135 165 2800 175 200 mΩ ppm/°C VIN = 2.7V to 5.5V2 VIN = 2.7V to ≤ 4.2V VIN = >4.2V to 5.5V VON = 5V VIN VIN VIN VIN VIN = = = = = 5V, 3V, 5V, 5V, 3V, RLOAD RLOAD RLOAD RLOAD RLOAD = = = = = 10Ω 5Ω 16.5Ω, TA = 0 to 50°C 10Ω, COUT = 0.1µF 5Ω, COUT = 0.1µF 2.0 2.4 0.01 300 0.8 V V 1 10 10 µA µs µs 1000 1500 1500 µs TON Turn-On Rise Time 1. Part requires minimum start-up of VIN ≥ 2.0V to ensure operation down to 1.8V. 2. For VIN outside this range, consult typical ON/OFF threshold curve. 4 4250.2006.03.1.3 AAT4250 Slew Rate Controlled Load Switch Typical Characteristics Unless otherwise noted, VIN = 5V, TA = 25°C. Quiescent Current vs. Temperature 4 4 Quiescent Current vs. Input Voltage Quiescent Current (µA) Quiescent Current (µA) 3.5 3 2.5 2 1.5 1 0.5 0 -40 -20 0 20 40 60 80 100 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 VIN = 5V VIN = 3V Temperature (°C) Input Voltage (V) Off-Supply Current vs. Temperature 1000 10000 Off-Switch Current vs. Temperature Off-Supply Current (nA) Off-Switch Current (nA) -20 0 20 40 60 80 100 1000 100 100 10 10 1 -40 1 -40 -20 0 20 40 60 80 100 Temperature (°C) Temperature (°C) Turn-Off Time vs. Temperature (CIN = 1µF; COUT = 0.1µF) 10 3.0 Turn-On Time vs. Temperature (CIN = 1µF; COUT = 0.1µF) Turn-Off Time (µs) Turn-On Time (ms) 9 8 7 6 5 -40 2.5 2.0 1.5 1.0 0.5 -40 VIN = 5V RLOAD = 10Ω VIN = 3V RLOAD = 5Ω VIN = 3V RLOAD = 5Ω VIN = 5V RLOAD = 10Ω -20 0 20 40 60 80 100 -20 0 20 40 60 80 100 Temperature (°C) Temperature (°C) 4250.2006.03.1.3 5 AAT4250 Slew Rate Controlled Load Switch Typical Characteristics Unless otherwise noted, VIN = 5V, TA = 25°C. Turn-On Waveforms (CIN = 1µF; COUT = 0.1µF; VIN = 3V) 4 2 6 5 Turn-On Waveforms (CIN = 1µF; COUT = 0.1µF; VIN = 5V) 1.2 V(ON/OFF) Voltage (V) Voltage (V) 3 1.5 V(ON/OFF) VOUT 1 Current (A) Current (A) 4 3 2 0.8 0.6 0.4 VOUT 2 1 1 0.5 IIN 1 0.2 0 -1 0 1 2 3 4 0 IIN 0 -1 0 1 2 3 4 0 Time (ms) Time (ms) Turn-On Waveforms (CIN = 1µF; COUT = 10µF; VIN = 3V) 4 2 6 5 Turn-On Waveforms (CIN = 1µF; COUT = 10µF; VIN = 5V) 1.2 Voltage (V) V(ON/OFF) Voltage (V) 3 1.5 V(ON/OFF) VOUT 1 Current (A) Current (A) VOUT 2 1 4 3 2 0.8 0.6 0.4 1 0.5 IIN 0 -1 0 1 2 3 4 0 IIN 1 0 -1 0 1 2 3 4 0.2 0 Time (ms) Time (ms) Turn-Off Waveforms (CIN = 1µF; COUT = 1µF; VIN = 3V) 4 5 3 Turn-Off Waveforms (CIN = 1µF; COUT = 1µF; VIN = 5V) Voltage (V) 2 1 Voltage (V) VOUT VOUT 3 V(ON/OFF) 0 -1 -1 1 3 5 7 9 11 13 15 1 V(ON/OFF) -1 -1 1 3 5 7 9 11 13 15 Time (µs) Time (µs) 6 4250.2006.03.1.3 AAT4250 Slew Rate Controlled Load Switch Typical Characteristics Unless otherwise noted, VIN = 5V, TA = 25°C. RDS(ON) vs. Temperature 160 150 190 180 RDS(ON) vs. Input Voltage RDS(ON) (mΩ) 130 120 110 100 90 80 -40 VIN = 3V VIN = 5V RDS(ON) (mΩ ) 140 170 160 150 140 130 120 110 1.5 2 2.5 3 3.5 4 IOUT = 100mA -20 0 20 40 60 80 100 4.5 5 5.5 Temperature (°C) Input Voltage (V) Typical ON/OFF Threshold vs. Input Voltage 2.2 ON/OFF Threshold 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VIH VIL Input Voltage (V) 4250.2006.03.1.3 7 AAT4250 Slew Rate Controlled Load Switch Functional Block Diagram IN Slew Rate Control OUT UnderVoltage Lockout Level Shift ON/OFF GND Functional Description The AAT4250 is a slew rate controlled P-channel MOSFET power switch designed for high-side load switching applications. It operates with input voltages ranging from 1.8V to 5.5V which, along with its extremely low operating current, makes it ideal for battery-powered applications. In cases where the input voltage drops below 1.8V, the AAT4250 MOSFET is protected from entering the saturated region of operation by automatically shutting down. In addition, the TTL compatible ON/OFF pin makes the AAT4250 an ideal level-shifted load switch. The slew rate controlling feature eliminates inrush current when the MOSFET is turned on, allowing the AAT4250 to be used with a small input capacitor, or no input capacitor at all. During slewing, the current ramps linearly until it reaches the level required for the output load condition. The proprietary control method works by careful control and monitoring of the MOSFET gate voltage. When the device is switched ON, the gate voltage is quickly increased to the threshold level of the MOSFET. Once at this level, the current begins to slew as the gate voltage is slowly increased until the MOSFET becomes fully enhanced. Once it has reached this point, the gate is quickly increased to the full input voltage and RDS(ON) is minimized. 8 Applications Information Input Capacitor A 1µF or larger capacitor is typically recommended for CIN in most applications. A CIN capacitor is not required for basic operation; however, it is useful in preventing load transients from affecting upstream circuits. CIN should be located as close to the device VIN pin as practically possible. Ceramic, tantalum, or aluminum electrolytic capacitors may be selected for CIN. There is no specific capacitor equivalent series resistance (ESR) requirement for CIN. However, for higher current operation, ceramic capacitors are recommended for CIN due to their inherent capability over tantalum capacitors to withstand input current surges from low-impedance sources, such as batteries in portable devices. Output Capacitor For proper slew operation, a 0.1µF capacitor or greater is required between VOUT and GND. Likewise, with the output capacitor, there is no specific capacitor ESR requirement. If desired, COUT may be increased without limit to accommodate any load transient condition without adversely affecting the slew rate. 4250.2006.03.1.3 AAT4250 Slew Rate Controlled Load Switch Enable Function The AAT4250 features an enable / disable function. This pin (ON) is active high and is compatible with TTL or CMOS logic. To assure the load switch will turn on, the ON control level must be greater than 2.0V. The load switch will go into shutdown mode when the voltage on the ON pin falls below 0.8V. When the load switch is in shutdown mode, the OUT pin is tri-stated, and quiescent current drops to leakage levels below 1µA. At any given ambient temperature (TA), the maximum package power dissipation can be determined by the following equation: TJ(MAX) - TA θJA PD(MAX) = Reverse Output-to-Input Voltage Conditions and Protection Under normal operating conditions, a parasitic diode exists between the output and input of the load switch. The input voltage should always remain greater than the output load voltage, maintaining a reverse bias on the internal parasitic diode. Conditions where VOUT might exceed VIN should be avoided since this would forward bias the internal parasitic diode and allow excessive current flow into the VOUT pin, possibly damaging the load switch. In applications where there is a possibility of VOUT exceeding VIN for brief periods of time during normal operation, the use of a larger value CIN capacitor is highly recommended. A larger value of CIN with respect to COUT will effect a slower CIN decay rate during shutdown, thus preventing VOUT from exceeding VIN. In applications where there is a greater danger of VOUT exceeding VIN for extended periods of time, it is recommended to place a Schottky diode from VIN to VOUT (connecting the cathode to VIN and anode to VOUT). The Schottky diode forward voltage should be less than 0.45V. Constants for the AAT4250 are maximum junction temperature (TJ(MAX) = 125°C) and package thermal resistance (ΘJA = 150°C/W). Worst case conditions are calculated at the maximum operating temperature, TA = 85°C. Typical conditions are calculated under normal ambient conditions where TA = 25°C. At TA = 85°C, PD(MAX) = 267mW. At TA = 25°C, PD(MAX) = 667mW. The maximum continuous output current for the AAT4250 is a function of the package power dissipation and the RDS of the MOSFET at TJ(MAX). The maximum RDS of the MOSFET at TJ(MAX) is calculated by increasing the maximum room temperature RDS by the RDS temperature coefficient. The temperature coefficient (TC) is 2800ppm/°C. Therefore, at 125°C: RDS(MAX) = RDS(25°C) × (1 + TC × ∆T) RDS(MAX) = 175mΩ × (1 + 0.002800 × (125°C - 25°C)) RDS(MAX) = 224mΩ For maximum current, refer to the following equation: 1 ⎛ PD(MAX)⎞ 2 IOUT(MAX) < ⎝ R ⎠ DS For example, if VIN = 5V, RDS(MAX) = 224mΩ, and TA = 25°C, IOUT(MAX) = 1.7A. If the output load current were to exceed 1.7A or if the ambient temperature were to increase, the internal die temperature would increase and the device would be damaged. Higher peak currents can be obtained with the AAT4250. To accomplish this, the device thermal resistance must be reduced by increasing the heat sink area or by operating the load switch in a dutycycle manner. Duty cycles with peaks less than 2ms in duration can be considered using the method below. Thermal Considerations and High Output Current Applications The AAT4250 is designed to deliver a continuous output load current. The limiting characteristic for maximum safe operating output load current is package power dissipation. In order to obtain high operating currents, careful device layout and circuit operating conditions must be taken into account. The following discussions will assume the load switch is mounted on a printed circuit board utilizing the minimum recommended footprint as stated in the Printed Circuit Board Layout Recommendations section of this datasheet. 4250.2006.03.1.3 9 AAT4250 Slew Rate Controlled Load Switch High Peak Output Current Applications Some applications require the load switch to operate at a continuous nominal current level with short duration, high-current peaks. Refer to the IDM specification in the Absolute Maximum Ratings table to ensure the AAT4250’s maximum pulsed current rating is not exceeded. The duty cycle for both output current levels must be taken into account. To do so, first calculate the power dissipation at the nominal continuous current level, and then add the additional power dissipation due to the short duration, high-current peak scaled by the duty factor. For example, a 4V system using an AAT4250 operates at a continuous 100mA load current level and has short 2A current peaks, as in a GSM application. The current peak occurs for 576µs out of a 4.61ms period. First, the current duty cycle is calculated: % Peak Duty Cycle: X/100 = 576µs/4.61ms % Peak Duty Cycle = 12.5% The load current is 100mA for 87.5% of the 4.61ms period and 2A for 12.5% of the period. Since the Electrical Characteristics do not report RDS(MAX) for 4V operation, it must be approximated by consulting the chart of RDS(ON) vs. VIN. The RDS reported for 5V RDS can be scaled by the ratio seen in the chart to derive the RDS for 4V VIN: 175mΩ x 120mΩ/115mΩ = 183mΩ. Derated for temperature: 183mΩ x (1 + 0.002800 x (125°C -25°C)) = 235mΩ. The power dissipation for a 100mA load is calculated as follows: PD(MAX) = I2OUT x RDS PD(100mA) = (100mA)2 x 235mΩ PD(100mA) = 2.35mW PD(87.5%D/C) = %DC x PD(100mA) PD(87.5%D/C) = 0.875 x 2.35mW PD(87.5%D/C) = 2.1mW The power dissipation for 100mA load at 87.5% duty cycle is 2.1mW. Now the power dissipation for the remaining 12.5% of the duty cycle at 2A is calculated: PD(MAX) = I2OUT x RDS PD(2A) = (2A)2 x 235mΩ PD(2A) = 940mW PD(12.5%D/C) = %DC x PD(2A) PD(12.5%D/C) = 0.125 x 940mW PD(12.5%D/C) = 117.5mW The power dissipation for 2A load at 12.5% duty cycle is 117mW. Finally, the two power figures are summed to determine the total true power dissipation under the varied load. PD(total) = PD(100mA) + PD(2A) PD(total) = 2.1mW + 117.5mW PD(total) = 120mW The maximum power dissipation for the AAT4250 operating at an ambient temperature of 85°C is 267mW. The device in this example will have a total power dissipation of 120mW. This is well within the thermal limits for safe operation of the device; in fact, at 85°C, the AAT4250 will handle a 2A pulse for up to 28% duty cycle. At lower ambient temperatures, the duty cycle can be further increased. Printed Circuit Board Layout Recommendations For proper thermal management, and to take advantage of the low RDS(ON) of the AAT4250, a few circuit board layout rules should be followed: VIN and VOUT should be routed using wider than normal traces, and GND should be connected to a ground plane. For best performance, CIN and COUT should be placed close to the package pins. 10 4250.2006.03.1.3 AAT4250 Slew Rate Controlled Load Switch Evaluation Board Layout The AAT4250 evaluation layout follows the printed circuit board layout recommendations, and can be used for good applications layout. Note: Board layout shown is not to scale. Figure 1: Evaluation Board Top Side Silk Screen Layout / Assembly Drawing. Figure 2: Evaluation Board Component Side Layout. Figure 3: Evaluation Board Solder Side Layout. 4250.2006.03.1.3 11 AAT4250 Slew Rate Controlled Load Switch Ordering Information Package SOT23-5 (SOT25) SC70JW-8 Marking1 ACXYY ACXYY Part Number (Tape and Reel)2 AAT4250IGV-T1 AAT4250IJS-T1 All AnalogicTech products are offered in Pb-free packaging. The term “Pb-free” means semiconductor products that are in compliance with current RoHS standards, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. For more information, please visit our website at http://www.analogictech.com/pbfree. Package Information SOT23-5 (SOT25) 2.85 ± 0.15 1.90 BSC 0.95 BSC 1.575 ± 0.125 1.10 ± 0.20 0.60 REF 2.80 ± 0.20 1.20 ± 0.25 0.15 ± 0.07 4° ± 4° GAUGE PLANE 10° ± 5° 0.40 ± 0.10 0.075 ± 0.075 0.60 REF 0.45 ± 0.15 0.10 BSC All dimensions in millimeters. 1. XYY = assembly and date code. 2. Sample stock is generally held on part numbers listed in BOLD. 12 4250.2006.03.1.3 AAT4250 Slew Rate Controlled Load Switch SC70JW-8 0.50 BSC 0.50 BSC 0.50 BSC 1.75 ± 0.10 0.225 ± 0.075 2.00 ± 0.20 2.20 ± 0.20 0.048REF 0.15 ± 0.05 0.85 ± 0.15 1.10 MAX 0.100 7 ° ± 3° 0.45 ± 0.10 2.10 ± 0.30 4° ± 4° All dimensions in millimeters. © Advanced Analogic Technologies, Inc. AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice. Customers are advised to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 4250.2006.03.1.3 0.05 ± 0.05 13
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