20V P-Channel Power MOSFET General Description
The AAT7357 is a low threshold dual P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a TSSOP-8 footprint has been squeezed into the footprint of a TSOPJW-8 package.
AAT7357
Features
• • • Drain-Source Voltage (max): -20V Contiunous Drain Current1 (max) = -5A @ 25°C Low On-Resistance: — 39mΩ @ VGS = -4.5V — 63mΩ @ VGS = -2.5V
Dual TSOPJW-8 Package
D1 8
Applications
• • • Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones
Top View
D1 7 D2 6
D2 5
Absolute Maximum Ratings
TA = 25°C, unless otherwise noted. Symbol
VDS VGS ID IDM IS PD TJ TSTG
1 S1
2 G1
3 S2
4 G2
Description
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ = 150°C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Maximum Power Dissipation1 Operating Junction Temperature Range Storage Temperature Range TA = 25°C TA = 70°C
Value
-20 ±12 ±5 ±4 ±12 -1.3 1.6 1.0 -55 to 150 -55 to 150
Units
V
A
TA = 25°C TA = 70°C
W °C °C
Thermal Characteristics1
Symbol
RθJA RθJA2 RθJF
Description
Junction-to-Ambient Steady State, One FET On Junction-to-Ambient t
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