AAT8660E

Advanced Analog Technology, Inc. AAT8660 Series Product information presented is current as of publication date. Details are subject to change without notice. ONE-CELL LI-ION BATTERY PROTECTION IC FEATURES Ideal for One-Cell Rechargeable Li-Ion Battery Packs High Accuracy Voltage Detection Low Current Consumption: GENERAL DESCRIPTION The AAT8660 series are designed to protect one-cell rechargeable Li-Ion battery pack against over-charge, over-discharge, over-current and short circuit. They use CMOS process to provide high accuracy voltage detection and low current consumption. Each of the AAT8660 devices incorporates voltage comparators, bandgap reference voltage generator, signal delay circuit, short circuit detector, and digital control circuit. In the charge process, when the battery voltage is charged to a value greater than VC1 (Over-Charge Threshold Voltage), the output of C out pin switches to the low level, i.e., the VN pin level. The output of C out pin will switch to high level 3μA Supply Current (Typical) 0.1μA Shutdown Current 3-Level Over Current Detection: Over-Current Level 1 /Over Current Level 2 / Short Circuit Wide Operating − 40οC to + 85οC Temperature Range: Small SOT26 Package PIN CONFIGURATION D out GND VN V DD NULL when the battery voltage falls lower than VC2 (Over-Charge Release Voltage), or when the charger is disconnected from the battery pack and the battery voltage level ranges between VC1 and VC2. During the discharge process, when the battery voltage drops to a value lower than VD1 (Over-Discharge Threshold Voltage), the output of D out pin switches to low level immediately after the internal delay time elapses. The output of D out pin will switch to high level when the battery voltage is at a level higher than VD 2 (Over-Discharge Release Voltage). C out – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 1 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series Over current level 1 voltage ( VOC1 ) is used to monitor the amount of discharge current. If the discharge current is high enough to cause VN pin voltage increase to a value greater than VOC1 , the output of D out pin will switch to a low level after a delay time t OC1 . If the load is removed from battery pack, the output of D out will change to a high level again. The mechanism of short circuit protection is identical to a discharge current. If the short circuit current is high enough to cause VN pin voltage increase to greater than Vshort , the output of D out pin will move to the low level after a delay time t short , and the output of D out level will change to high when the load is removed from battery pack. BLOCK DIAGRAM: VDD D out C out GND VN – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 2 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series PIN DESCRIPTION PIN NO NAME I/O 1 2 3 4 5 6 D out DESCRIPTION Discharge Control Pin which Connects to External MOSFET Gate Voltage Detection Pin between VN and GND Charge Control Pin which Connects to External MOSFET Gate. Null Pad. Power Supply Input Pin Ground O I O ╳ I I VN C out NULL VDD GND ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Supply Voltage VN Pin Input Voltage D out Pin Output Voltage C out Pin Output Voltage SYMBOL VDD VVN VDout VCout Pd TC VALUE −0.3 to 8.0 VDD − 20 to VDD + 0.3 −0.3 to VDD + 0.3 VVN − 0.3 to VDD + 0.3 UNIT V V V V mW ο ο Power Dissipation Operating Temperature Range Storage Temperature Range 150 −40 to +85 −40 to +125 C C Tstorage RECOMMENDED OPERATING CONDITIONS PARAMETER Supply Voltage, VDD D out Output Voltage C out Output Voltage TEST CONDITION Voltage Defined as VDD to GND MIN 1.5 GND VN MAX 7.0 VDD VDD UNIT V V V OPERATION VOLTAGE AND OPERATION CURRENT PARAMETER Supply Current at Normal Operation Mode Standby Current at Power Down Mode Operation Voltage between VDD and VN TEST CONDITION VDD =3.3V; VN=0V; GND=0V MIN 1.5 TYP 3.0 - MAX 6.0 0.1 20.0 UNIT μA μA V – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 3 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660A DETECTION VOLTAGE AND DELAY TIME ( 25 ο C ) PARAMETER Over Charge Threshold Voltage Over Charge Release Voltage Over Discharge Threshold Voltage Over Discharge Release Voltage Over Charge Delay Time Over Discharge Delay Time Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage SYMBOL VC1 VC 2 VD1 VD 2 t C1 t D1 VOC1 TEST CONDITION Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V VDD = 3.6V to 2.4V MIN 4.275 TYP 4.325 MAX 4.375 VC1-0.15 2.580 VD1+0.5 1.300 162.5 170 UNIT V V V V s ms mV VC1-0.35 VC1-0.25 2.420 VD1+0.3 0.700 2.500 VD1+0.4 1.000 125.0 150 VOC 2 Short Circuit Detection Voltage Over Current Level 1 Detection Delay Time Over Current Level 2 Detection Delay Time Short Circuit Detection Delay Time Charger Detection Voltage C out High Level Resistance Vshort 87.5 Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 130 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response 400 with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out VDD −1.7 Response with t short Delay Time) VDD = 3.0V 500 600 mV VDD −1.3 VDD − 0.9 V t OC1 t OC 2 t short VCHR R COH R COL R DOH R DOL R VND R VNG 5.6 1.4 1.1 8.0 2.0 2.0 10 10.4 2.6 3.4 50 −0.6 ms ms ms μs Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V VDD = 3.0V C out Low Level Resistance D out High Level Resistance D out Low Level Resistance Detect Rising Edge of “ D out ” Pin Voltage (when VD1＜VDD＜ VD2) VDD = 3.5V ; C out = 3.0V ; VN = 0V VDD = 4.5V ; C out = 0.5V ; VN = 0V VDD = 3.5V ; D out = 3.0V ; VN = 0V VDD = 1.8V ; D out = 0.5V ; VN = 1.8V VDD = 1.8V ; VN = 0V VDD = 3.5V ; VN = 3.5V −2.0 −1.3 V kΩ kΩ kΩ kΩ kΩ kΩ 1 150 2.5 2.5 100 10 2 602 5.0 5.0 300 20 10 2,380 10.0 10.0 900 40 Internal Resistance between VN and VDD Internal Resistance between VN and GND – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 4 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660B DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER Over Charge Threshold Voltage Over Charge Release Voltage Over Discharge Threshold Voltage Over Discharge Release Voltage Over Charge Delay Time Over Discharge Delay Time Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage SYMBOL VC1 VC 2 VD1 VD 2 t C1 t D1 VOC1 TEST CONDITION Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V VDD = 3.6V to 2.2V MIN 4.300 TYP 4.350 MAX 4.400 UNIT V V V V s ms mV VC1-0.30 VC1-0.20 VC1-0.10 2.220 VD1+0.6 0.088 22.4 130 2.300 VD1+0.7 0.125 32.0 150 2.380 VD1+0.8 0.163 41.6 170 VOC 2 Short Circuit Detection Voltage Over Current Level 1 Detection Delay Time Over Current Level 2 Detection Delay Time Short Circuit Detection Delay Time Charger Detection Voltage C out High Level Resistance C out Low Level Resistance D out High Level Resistance D out Low Level Resistance Vshort Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) VDD = 3.0V 400 500 600 mV VDD −1.7 VDD −1.3 VDD − 0.9 V t OC1 t OC 2 t short VCHR R COH R COL R DOH R DOL R VND R VNG 2.8 1.4 1.1 4.0 2.0 2.0 10 5.2 2.6 3.4 50 −0.6 ms ms ms μs Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V VDD = 3.0V Detect Rising Edge of “ D out ” Pin Voltage (when VD1＜VDD＜VD2) VDD = 3.5V ; C OUT = 3.0V ; VN = 0V VDD = 4.5V ; C OUT = 0.5V ; VN = 0V VDD = 3.5V ; D out = 3.0V ; VN = 0V VDD = 1.8V ; D out = 0.5V ; VN = 1.8V VDD = 1.8V ; VN = 0V VDD = 3.5V ; VN = 3.5V −2.0 −1.3 V kΩ kΩ kΩ kΩ kΩ kΩ 1 150 2.5 2.5 100 10 2 602 5.0 5.0 300 20 10 2,380 10.0 10.0 900 40 Internal Resistance between VN and VDD Internal Resistance between VN and GND – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 5 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660C DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER Over Charge Threshold Voltage Over Charge Release Voltage Over Discharge Threshold Voltage Over Discharge Release Voltage Over Charge Delay Time Over Discharge Delay Time Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage SYMBOL VC1 VC 2 VD1 VD 2 t C1 t D1 VOC1 TEST CONDITION Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V VDD = 3.6V to 2.2V MIN 4.250 TYP 4.300 MAX 4.350 UNIT V V V V s ms mV VC1-0.30 VC1-0.20 VC1-0.10 2.220 VD1-0.08 0.700 87.5 2.300 VD1 1.000 125.0 100 2.380 VD1+0.08 1.300 162.5 120 VOC 2 Short Circuit Detection Voltage Over Current Level 1 Detection Delay Time Over Current Level 2 Detection Delay Time Short Circuit Detection Delay Time Charger Detection Voltage C out High Level Resistance C out Low Level Resistance D out High Level Resistance D out Low Level Resistance Vshort Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 80 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response 400 with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out VDD −1.7 Response with t short Delay Time) VDD = 3.0V 480 600 mV VDD − 1.3 VDD − 0.9 V t OC1 t OC 2 t short VCHR R COH R COL R DOH R DOL R VND R VNG 5.6 1.4 1.1 8.0 2.0 2.0 10 10.4 2.6 3.4 50 −0.6 ms ms ms Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V VDD = 3.0V μs V kΩ kΩ kΩ kΩ kΩ kΩ Detect Rising Edge of “ D out ” Pin Voltage (when VD1＜VDD＜VD2) VDD = 3.5V ; C out = 3.0V ; VN = 0V VDD = 4.5V ; C out = 0.5V ; VN = 0V VDD = 3.5V ; D out = 3.0V ; VN = 0V VDD = 1.8V ; D out = 0.5V ; VN = 1.8V VDD = 1.8V ; VN = 0V VDD = 3.5V ; VN = 3.5V −2.0 −1.3 1 150 2.5 2.5 100 10 2 602 5.0 5.0 300 20 10 2,380 10.0 10.0 900 40 Internal Resistance between VN and VDD Internal Resistance between VN and GND – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 6 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660D DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER Over Charge Threshold Voltage Over Charge Release Voltage Over Discharge Threshold Voltage Over Discharge Release Voltage Over Charge Delay Time Over Discharge Delay Time Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage SYMBOL VC1 VC 2 VD1 VD 2 t C1 t D1 VOC1 TEST CONDITION Detect Rising Edge Voltage Detect Falling Edge Voltage Detect Falling Edge Voltage Detect Rising Edge Voltage VDD = 3.6V to 4.5V VDD = 3.6V to 2.2V MIN 4.230 VC1-0.30 2.201 VD1-0.08 0.700 87.5 110 TYP 4.280 VC1-0.20 2.281 VD1 1.000 125.0 130 MAX 4.330 VC1-0.10 2.361 VD1+0.08 1.300 162.5 150 UNIT V V V V s ms mV of Supply of Supply of Supply of Supply VOC 2 Short Circuit Detection Voltage Over Current Level 1 Detection Delay Time Over Current Level 2 Detection Delay Time Short Circuit Detection Delay Time Charger Detection Voltage C out High Level Resistance C out Low Level Resistance D out High Level Resistance D out Low Level Resistance Vshort Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) VDD = 3.0V 400 490 600 mV VDD −1.7 VDD −1.3 VDD − 0.9 V t OC1 t OC 2 t short VCHR R COH R COL R DOH R DOL R VND R VNG 5.6 1.4 1.1 8.0 2.0 2.0 10 10.4 2.6 3.4 50 −0.6 ms ms ms μs Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V VDD = 3.0V Detect Rising Edge of “ D out ” Pin Voltage (when VD1＜VDD＜VD2) VDD = 3.5V ; C out = 3.0V ; VN = 0V VDD = 4.5V ; C out = 0.5V ; VN = 0V VDD = 3.5V ; D out = 3.0V ; VN = 0V VDD = 1.8V ; D out = 0.5V ; VN = 1.8V VDD = 1.8V ; VN=0V VDD = 3.5V ; VN = 3.5V −2.0 −1.3 V kΩ kΩ kΩ kΩ kΩ kΩ 1 150 2.5 2.5 100 10 2 602 5.0 5.0 300 20 10 2,380 10.0 10.0 900 40 Internal Resistance between VN and VDD Internal Resistance between VN and GND – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 7 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660E DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER Over Charge Threshold Voltage Over Charge Release Voltage Over Discharge Threshold Voltage Over Discharge Release Voltage Over Charge Delay Time Over Discharge Delay Time Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage SYMBOL VC1 VC 2 VD1 VD 2 t C1 t D1 VOC1 TEST CONDITION Detect Rising Edge Voltage Detect Falling Edge Voltage Detect Falling Edge Voltage Detect Rising Edge Voltage VDD = 3.6V to 4.5V VDD = 3.6V to 2.2V MIN 4.230 VC1-0.30 2.201 VD1+0.5 0.700 87.5 80 TYP 4.280 VC1-0.20 2.281 VD1+0.6 1.000 125.0 100 MAX 4.330 VC1-0.10 2.361 VD1+0.7 1.300 162.5 120 UNIT V V V V s ms mV of Supply of Supply of Supply of Supply VOC 2 Short Circuit Detection Voltage Over Current Level 1 Detection Delay Time Over Current Level 2 Detection Delay Time Short Circuit Detection Delay Time Charger Detection Voltage C out High Level Resistance C out Low Level Resistance D out High Level Resistance D out Low Level Resistance Vshort Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) VDD = 3.0V 400 480 600 mV VDD −1.7 VDD −1.3 VDD − 0.9 V t OC1 t OC 2 5.6 1.4 1.1 8.0 2.0 2.0 10 10.4 2.6 3.4 50 -0.6 10 2,380 10.0 10.0 900 40 ms ms ms μs Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V VDD = 3.0V t short VCHR R COH R COL R DOH R DOL R VND R VNG Detect Rising Edge of “ D out ” Pin Voltage (when VD1＜VDD＜VD2) VDD = 3.5V ; C out = 3.0V ; VN = 0V VDD = 4.5V ; C out = 0.5V ; VN = 0V VDD = 3.5V ; D out = 3.0V ; VN = 0V VDD = 1.8V ; D out = 0.5V ; VN = 1.8V VDD = 1.8V ; VN = 0V VDD = 3.5V ; VN = 3.5V -2.0 1 150 2.5 2.5 100 10 -1.3 2 602 5.0 5.0 300 20 V kΩ kΩ kΩ kΩ kΩ Internal Resistance between VN and VDD Internal Resistance between VN and GND kΩ – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 8 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660F DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER Over Charge Threshold Voltage Over Charge Release Voltage Over Discharge Threshold Voltage Over Discharge Release Voltage Over Charge Delay Time Over Discharge Delay Time Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage SYMBOL VC1 VC 2 VD1 VD 2 t C1 t D1 VOC1 TEST CONDITION Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V VDD = 3.6V to 2.4V MIN 4.275 TYP 4.325 MAX 4.375 UNIT V V V V s ms mV VC1-0.35 VC1-0.25 VC1-0.15 2.420 VD1+0.3 0.700 87.5 80 2.500 2.580 VD1+0.4 VD1+0.5 1.000 125.0 100 1.300 162.5 120 VOC 2 Short Circuit Detection Voltage Over Current Level 1 Detection Delay Time Over Current Level 2 Detection Delay Time Short Circuit Detection Delay Time Charger Detection Voltage C out High Level Resistance C out Low Level Resistance D out High Level Resistance D out Low Level Resistance Vshort Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) VDD = 3.0V 400 480 600 mV VDD −1.7 VDD −1.3 VDD − 0.9 V t OC1 t OC 2 t short VCHR R COH R COL R DOH R DOL R VND R VNG 5.6 1.4 1.1 8.0 2.0 2.0 10 10.4 2.6 3.4 50 −0.6 ms ms ms μs Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V VDD = 3.0V Detect Rising Edge of “ D out ” Pin Voltage (When VD1＜VDD＜VD2) VDD = 3.5V ; C out = 3.0V ; VN = 0V VDD = 4.5V ; C out = 0.5V ; VN = 0V VDD = 3.5V ; D out = 3.0V ;VN=0V VDD = 1.8V ; D out = 0.5V ;VN=1.8V VDD = 1.8V ; VN = 0V VDD = 3.5V ; VN=3.5V −2.0 −1.3 V kΩ kΩ kΩ kΩ kΩ 1 150 2.5 2.5 100 10 2 602 5.0 5.0 300 20 10 2,380 10.0 10.0 900 40 Internal Resistance between VN and VDD Internal Resistance between VN and GND kΩ – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 9 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660G DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER Over Charge Threshold Voltage Over Charge Release Voltage Over Discharge Threshold Voltage Over Discharge Release Voltage Over Charge Delay Time Over Discharge Delay Time Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage SYMBOL VC1 VC 2 VD1 VD 2 t C1 t D1 VOC1 TEST CONDITION Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V VDD = 3.6V to 2.2V MIN 4.300 TYP 4.350 MAX 4.400 UNIT V V V V s ms mV VC1-0.30 VC1-0.20 VC1-0.10 2.220 VD1+0.6 0.088 22.4 180 2.300 2.380 VD1+0.7 VD1+0.8 0.125 32.0 200 0.163 41.6 220 VOC 2 Short Circuit Detection Voltage Over Current Level 1 Detection Delay Time Over Current Level 2 Detection Delay Time Short Circuit Detection Delay Time Charger Detection Voltage C out High Resistance Level C out Low Resistance Level D out High Resistance Level D out Low Resistance Level Vshort Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) VDD = 3.0V 400 510 600 mV VDD −1.7 VDD −1.3 VDD − 0.9 V t OC1 t OC 2 t short VCHR R COH R COL R DOH R DOL R VND R VNG 2.8 1.4 1.1 4 2.0 2.0 10 5.2 2.6 3.4 50 −0.6 ms ms ms μs Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V VDD = 3.0V Detect Rising Edge of “ D out ” Pin Voltage(when VD1 ＜ VDD ＜ VD2) VDD = 3.5V ; C out = 3.0V ;VN=0V VDD = 4.5V ; C out = 0.5V ;VN=0V VDD = 3.5V ; D out = 3.0V ;VN=0V VDD = 1.8V ; D out = 0.5V ;VN=1.8V VDD = 1.8V ; VN=0V VDD = 3.5V ; VN=3.5V −2.0 −1.3 V kΩ kΩ kΩ kΩ kΩ kΩ 1 150 2.5 2.5 100 10 2 602 5.0 5.0 300 20 10 2,380 10.0 10.0 900 40 Internal Resistance between VN and VDD Internal Resistance between VN and GND – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 10 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660H DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER Over Charge Threshold Voltage Over Charge Release Voltage Over Discharge Threshold Voltage Over Discharge Release Voltage Over Charge Delay Time Over Discharge Delay Time Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage SYMBOL VC1 VC 2 VD1 VD 2 t C1 t D1 VOC1 TEST CONDITION Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect rising Edge of Supply Voltage VDD = 3.6V to 4.5V VDD = 3.6V to 2.2V MIN 4.250 TYP 4.300 MAX 4.350 UNIT V V V V s ms mV VC1-0.30 VC1-0.20 VC1-0.10 2.220 VD1-0.08 0.700 87.5 2.300 VD1 1.000 125.0 150 2.380 VD1+0.08 1.300 162.5 170 VOC 2 Short Circuit Detection Voltage Over Current Level 1 Detection Delay Time Over Current Level 2 Detection Delay Time Short Circuit Detection Delay Time Charger Detection Voltage C out High Resistance Level C out Low Resistance Level D out High Resistance Level D out Low Resistance Level Vshort t OC1 t OC 2 t short VCHR R COH R COL R DOH R DOL R VND R VNG Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 130 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response 400 with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out VDD −1.7 Response with t short Delay Time) VDD = 3.0V 5.6 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V VDD = 3.0V 500 600 mV VDD −1.3 VDD − 0.9 V 8.0 2.0 2.0 10 10.4 2.6 3.4 50 -0.6 10 2,380 10.0 10.0 900 40 ms ms ms μs 1.4 1.1 Detect Rising Edge of “ D out ” Pin Voltage (when VD1＜VDD＜VD2) VDD = 3.5V ; C out = 3.0V ;VN=0V VDD = 4.5V ; C out = 0.5V ;VN=0V VDD = 3.5V ; D out = 3.0V ;VN=0V VDD = 1.8V ; D out = 0.5V ;VN=1.8V VDD = 1.8V ; VN=0V VDD = 3.5V ; VN=3.5V -2.0 1 150 2.5 2.5 100 10 -1.3 2 602 5.0 5.0 300 20 V kΩ kΩ kΩ kΩ kΩ kΩ Internal Resistance between VN and VDD Internal Resistance between VN and GND – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 11 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660I DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER Over Charge Threshold Voltage Over Charge Release Voltage Over Discharge Threshold Voltage Over Discharge Release Voltage Over Charge Delay Time Over Discharge Delay Time Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage SYMBOL VC1 VC 2 VD1 VD 2 t C1 t D1 VOC1 TEST CONDITION Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V VDD = 3.6V to 2.2V MIN 4.250 TYP 4.300 MAX UNIT 4.350 V V V V s ms mV VC1-0.30 VC1-0.20 VC1-0.10 2.220 VD1-0.08 0.700 87.5 2.300 VD1 1.000 125.0 130 2.380 VD1+0.08 1.300 162.5 150 VOC 2 Short Circuit Detection Voltage Over Current Level 1 Detection Delay Time Over Current Level 2 Detection Delay Time Short Circuit Detection Delay Time Charger Detection Voltage C out High Resistance Level C out Low Resistance Level D out High Resistance Level D out Low Resistance Level Vshort t OC1 t OC 2 t short VCHR R COH R COL R DOH R DOL R VND R VNG Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 110 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response 400 with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out VDD −1.7 Response with t short Delay Time) VDD = 3.0V 5.6 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V VDD = 3.0V 490 600 mV VDD −1.3 VDD − 0.9 V 8.0 2.0 2.0 10 10.4 2.6 3.4 50 −0.6 ms ms ms μs 1.4 1.1 Detect Rising Edge of “ D out ” Pin Voltage (when VD1＜VDD＜VD2) VDD = 3.5V ; C out = 3.0V ;VN=0V VDD = 4.5V ; C out = 0.5V ;VN=0V VDD = 3.5V ; D out = 3.0V ;VN=0V VDD = 1.8V ; D out = 0.5V ;VN=1.8V VDD = 1.8V ; VN=0V VDD = 3.5V ; VN=3.5V −2.0 −1.3 V kΩ kΩ kΩ kΩ kΩ 1 150 2.5 2.5 100 10 2 602 5.0 5.0 300 20 10 2,380 10.0 10.0 900 40 Internal Resistance between VN and VDD Internal Resistance between VN and GND kΩ – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 12 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660J DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER Over Charge Threshold Voltage Over Charge Release Voltage Over Discharge Threshold Voltage Over Discharge Release Voltage Over Charge Delay Time Over Discharge Delay Time Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage SYMBOL VC1 VC 2 VD1 VD 2 t C1 t D1 VOC1 TEST CONDITION Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V VDD = 3.6V to 2.2V MIN 4.230 VC1-0.30 2.201 VD1-0.08 0.700 87.5 180 TYP 4.280 MAX UNIT 4.330 V V V V s ms mV VC1-0.20 VC1-0.10 2.281 VD1 1.000 125.0 200 2.361 VD1+0.08 1.300 162.5 220 VOC 2 Short Circuit Detection Voltage Over Current Level 1 Detection Delay Time Over Current Level 2 Detection Delay Time Short Circuit Detection Delay Time Charger Detection Voltage C out High Level Resistance C out Low Level Resistance D out High Level Resistance D out Low Level Resistance Vshort t OC1 t OC 2 t short VCHR R COH R COL R DOH R DOL R VND R VNG Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) VDD = 3.0V Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V VDD = 3.0V 400 510 600 mV VDD −1.7 VDD −1.3 VDD − 0.9 V 5.6 1.4 1.1 8.0 2.0 2.0 10 10.4 2.6 3.4 50 -0.6 10 2,380 10.0 10.0 900 40 ms ms ms μs Detect Rising Edge of “ D out ” Pin Voltage (when VD1＜VDD＜ VD2) VDD = 3.5V ; C out = 3.0V ;VN=0V VDD = 4.5V ; C out = 0.5V ;VN=0V VDD = 3.5V ; D out = 3.0V ;VN=0V VDD = 1.8V ; D out = 0.5V ;VN=1.8V VDD = 1.8V ; VN=0V VDD = 3.5V ; VN=3.5V -2.0 1 150 2.5 2.5 100 10 -1.3 2 602 5.0 5.0 300 20 V kΩ kΩ kΩ kΩ kΩ kΩ Internal Resistance between VN and VDD Internal Resistance between VN and GND – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 13 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660K DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER Over Charge Threshold Voltage Over Charge Release Voltage Over Discharge Threshold Voltage Over Discharge Release Voltage Over Charge Delay Time Over Discharge Delay Time Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage SYMBOL VC1 VC 2 VD1 VD 2 t C1 t D1 VOC1 TEST CONDITION Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V VDD = 3.6V to 2.2V MIN 4.20 VC1-0.3 2.201 VD1+0.5 0.700 87.5 80 TYP 4.25 MAX UNIT 4.30 V V V V s ms mV VC1-0.2 VC1-0.1 2.281 2.361 VD1+0. VD1+0.7 6 1.000 1.300 125 100 162.5 120 VOC 2 Short Circuit Detection Voltage Over Current Level 1 Detection Delay Time Over Current Level 2 Detection Delay Time Short Circuit Detection Delay Time Charger Detection Voltage C out High Level Resistance C out Low Level Resistance D out High Level Resistance D out Low Level Resistance Vshort t OC1 t OC 2 t short VCHR R COH R COL R DOH R DOL R VND R VNG Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) VDD = 3.0V 400 480 600 mV VDD −1.7 VDD − 1. VDD − 0.9 V 5.6 1.4 1.1 8.0 2.0 2.0 10 10.4 2.6 3.4 50 -0.6 10 2380 10.0 10.0 900 40 ms ms ms μs Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V VDD = 3.0V Detect Rising Edge of “ D out ” Pin Voltage (when VD1＜VDD＜VD2) VDD = 3.5V ; C out = 3.0V ;VN=0V VDD = 4.5V ; C out = 0.5V ;VN=0V VDD = 3.5V ; D out = 3.0V ;VN=0V VDD = 1.8V ; D out = 0.5V ;VN=1.8V VDD = 1.8V ; VN=0V VDD = 3.5V ; VN=3.5V -2.0 1 150 2.5 2.5 100 10 -1.3 2 602 5.0 5.0 300 20 V kΩ kΩ kΩ kΩ kΩ kΩ Internal Resistance between VN and VDD Internal Resistance between VN and GND – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 14 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series SUMMARY OF AAT8660 DETECTION VOLTAGE AND DELAY TIME ( 25ο C ) PARAMETER SYMBOL VC1 DEVICE AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K MIN 4.275 4.30 4.25 4.23 4.23 4.275 4.3 4.25 4.25 4.23 4.20 VC1-0.35 VC1-0.3 VC1-0.3 VC1-0.3 VC1-0.3 VC1-0.35 VC1-0.3 VC1-0.3 VC1-0.3 VC1-0.3 VC1-0.3 2.420 2.220 2.220 2.201 2.201 2.420 2.220 2.220 2.220 2.201 2.201 TYP MAX UNIT V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V Over Charge Threshold Voltage VC2 Over Charge Release Voltage 4.325 4.375 4.35 4.40 4.3 4.35 4.28 4.33 4.28 4.33 4.325 4.375 4.35 4.4 4.3 4.35 4.3 4.35 4.28 4.33 4.25 4.30 VC1-0.25 VC1-0.15 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 VC1-0.25 VC1-0.15 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 2.5 2.3 2.3 2.281 2.281 2.5 2.3 2.3 2.3 2.281 2.281 2.580 2.380 2.380 2.361 2.361 2.580 2.380 2.380 2.380 2.361 2.361 VD1 Over Discharge Threshold Voltage – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 15 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series SUMMARY OF AAT8660 DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL VD2 DEVICE AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K MIN VD1+0.3 VD1+0.6 VD1-0.08 VD1-0.08 VD1+0.5 VD1+0.3 VD1+0.6 VD1-0.08 VD1-0.08 VD1-0.08 VD1+0.5 0.700 0.088 0.700 0.700 0.700 0.700 0.088 0.700 0.700 0.700 0.700 87.5 22.4 87.5 87.5 87.5 87.5 22.4 87.5 87.5 87.5 87.5 TYP VD1+0.4 VD1+0.7 VD1 VD1 VD1+0.6 VD1+0.4 VD1+0.7 VD1 VD1 VD1 VD1+0.6 1 0.125 1 1 1 1 0.125 1 1 1 1 125 32 125 125 125 125 32 125 125 125 125 MAX VD1+0.5 VD1+0.8 VD1+0.08 VD1+0.08 VD1+0.7 VD1+0.5 VD1+0.8 VD1+0.08 VD1+0.08 VD1+0.08 VD1+0.7 1.300 0.163 1.300 1.300 1.300 1.300 0.163 1.300 1.300 1.300 1.300 162.5 41.6 162.5 162.5 162.5 162.5 41.6 162.5 162.5 162.5 162.5 UNIT V V V V V V V V V V V s s s s s s s s s s s ms ms ms ms ms ms ms ms ms ms ms Over Discharge Release Voltage tC1 Over Charge Delay Time tD1 Over Discharge Delay Time – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 16 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series SUMMARY OF AAT8660 DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER DEVICE SYMBOL VOC1 AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K VOC2 AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K tOC1 AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K MIN 130 130 80 110 80 80 180 130 110 180 80 400 400 400 400 400 400 400 400 400 400 400 5.6 2.8 5.6 5.6 5.6 5.6 2.8 5.6 5.6 5.6 5.6 TYP 150 150 100 130 100 100 200 150 130 200 100 500 500 480 490 480 480 510 500 490 510 480 8 4 8 8 8 8 4 8 8 8 8 MAX 170 170 120 150 120 120 220 170 150 220 120 600 600 600 600 600 600 600 600 600 600 600 10.4 5.2 10.4 10.4 10.4 10.4 5.2 10.4 10.4 10.4 10.4 UNIT mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV ms ms ms ms ms ms ms ms ms ms ms Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage Over Current Level 1 Detection Delay Time – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 17 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series TIMING CHART AAT8660 (CHARGE AND DISCHARGE) V DD VC1 VC2 VD2 VD1 t D1 V DD t D1 D out GND V DD t C1 t C1 C out VN V DD GND VCHR – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 18 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series TIMING CHART AAT8660 (UNUSUAL CHARGE CURRENT, OVER CURRENT, SHORT CIRCUIT) V C1 C2 V V DD VD 2 V D1 t OC t OC 2 1 t OC 2 t short V t OC 1 DD D out V DD V t DD C1 C out V V short V OC 2 V OC 1 DD V CHR Time – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 19 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series TYPICAL APPLICATION + R1 100Ω C1 0.1μF Li Battery VDD VN GND D OUT C OUT R2 1kΩ − – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 20 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series PACKAGE DIMENSION – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 21 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series PACKAGE DIMENSIONS (CONT.) VARIATION (ALL DIMENSIONS SHOWN IN MILLIMETERS) SYMBOL MIN TYP ----------MAX A A1 A2 b c D E E1 e e1 L L1 L2 R R1 θ θ1 NOTE: ----------- 1.45 0.15 1.30 0.50 0.22 0.90 0.30 0.08 1.15 ----------- 2.90 BSC 2.80 BSC 1.60 BSC 0.95 BSC 1.90 BSC 0.30 0.45 0.60 REF 0.25 BSC 0.10 0.10 0 ο 0.60 ----------- ------ 0.25 8ο 15 ο 5ο 4 10 ο ο 1 JEDEC OUTLINE: MO-178 AB – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 22 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series TAPE AND REEL PACKING METHOD: 3,000PCS/REEL, 5 REELS/BOX – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 23 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series TAPE AND REEL (CONT.) X.XXX X X.XXX X.XX X.X X ± 0.0025 ± 0.006 ± 0.025 ± 0.10 ± 0.25 UNIT: MILLIMETERS – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 24 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series PART MARKING PREVIOUS SOT26 TOP MARKING AXXX NOTE: SOT26 HAS NO BACK MARKING. CURRENT SOT26 TOP MARKING AXX ORDERING INFORMATION – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 25 of 25 V2.0