5SDA07D3806

Key Parameters VRRM = 3800 IFAVM = 790 IFSM = 7.6 VF0 = 1.01 rF = 0.72 V A kA V mΩ Avalanche Rectifier Diode 5SDA 07D3806 Doc. No. 5SYA 1123 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing Blocking Part number VRRM VRSM IRRM PRSM 5SDA 07D3806 3800 4180 ≤ ≤ ≤ 50 70 50 mA kW kW 5SDA 0763206 3200 3520 Condition f tP tP tP = 50 Hz = 10 ms = 20 µs = 20 µs tP Tj Tj Tj Tj = 10 ms = 160°C = 160°C = 45°C = 160°C VRRM Mechanical data FM a Mounting force min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance Air strike distance 10 kN 12 kN 50 m/s 2 200 m/s 0.25 kg 30 mm 20.5 mm 2 m DS Da ABB Semiconductors AG ABB Semiconductors AG 5SDA 07D3806 On-state IFAVM IFRMS IFSM It VF0 rF VF min VF max 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Threshold voltage Slope resistance On-state voltage On-state voltage 790 A 1240 A 7.6 kA 8.2 kA 290⋅103 A s 2 2 Half sine wave, TC = 85°C tp tp tp tp IF IF = = = = = = 10 ms 8.3 ms 10 ms 8.3 ms 800 - 2400 A 1800 A Tj = Tj = 160°C 25°C Tj = 160°C After surge: VD = VR = 0V 280⋅10 A s 3 1.01 V 0.72 mΩ 1.70 V 2.00 V Thermal Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink 80 K/kW 80 K/kW 40 K/kW 16 K/kW 8 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled -40...160°C Analytical function for transient thermal impedance: 45 40 Zth 35 30 25 20 15 Fm =10...12 kN Double Side Cooling ZthJC(t) = i R (K/kW) τi (s) 1 20.95 0.396 ∑ R (1- e i i =1 2 10.57 0.072 3 7.15 4 -t/τ i ) 4 1.33 [K/kW] 10 5 0 10-3 2 3 4 5 67 0.009 0.0044 10-2 2 3 4 5 67 10-1 t [s] 2 3 4 5 56 100 2 3 4 5 67 101 For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows: IFAVM = -VF0 + (VF0)2 + 4 * f * rf * P 2 * f 2 * rf or 2 IFAVM (A) T max (°C) Rthja (K/kW) f= 2 P (W) Tc (°C) RthJC (K/kW) for DC current for half-sine wave for 120°el., sine for 60° el., sine VF0 (V) Ta (°C) rF (Ω ) where TJ max - TC P= Rthjc TJ max - TA P= Rthja 1 2.5 3.1 6 Doc. No. 5SYA 1123 - 01 Apr-98 ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306