5SDA11D1702

Key Parameters VRRM = 1700 IFAVM = 1310 IFSM = 15.0 VF0 = 0.74 rF = 0.25 V A kA V mΩ Avalanche Rectifier Diode 5SDA 11D1702 Doc. No. 5SYA 1119 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing Blocking Part number VRRM VRSM IRRM PRSM 5SDA 11D1702 1700 1870 ≤ ≤ ≤ 5SDA 11D1402 1400 1540 50 70 50 mA kW kW 5SDA 11D1102 Condition 1100 1200 f tP tP tP = 50 Hz = 10 ms = 20 µs = 20 µs tP Tj Tj Tj Tj = 10 ms = 160°C = 160°C = 45°C = 160°C VRRM Mechanical data FM a Mounting force min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance Air strike distance 10 kN 12 kN 50 m/s 2 200 m/s 0.25 kg 30 mm 20.5 mm 2 m DS Da ABB Semiconductors AG ABB Semiconductors AG 5SDA 11D1702 On-state IFAVM IFRMS IFSM It VF0 rF VF min VF max 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Threshold voltage Slope resistance On-state voltage On-state voltage 1310 A 2060 A 15 kA 16 kA 1130⋅10 A s 3 3 2 2 Half sine wave, TC = 85°C tp tp tp tp IF IF = = = = 10 ms 8.3 ms 10 ms 8.3 ms Tj = Tj = 160°C 25°C Tj = 160°C After surge: VR ≈ 0V 1070⋅10 A s 0.74 V 0.25 mΩ 1.05 V 1.20 V = 1000 - 3000 A = 1800 A Thermal Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink 80 K/kW 80 K/kW 40 K/kW 16 K/kW 8 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled -40...160°C Analytical function for transient thermal impedance: 45 40 Zth 35 30 25 20 Fm =10...12 kN Double Side Cooling ZthJC(t) = i R (K/kW) τi (s) 1 20.95 0.396 ∑ R (1- e i i =1 2 10.57 0.072 3 7.15 4 -t/τ i ) 4 1.33 [K/kW] 15 10 5 0 10-3 2 3 4 5 67 0.009 0.0044 10-2 2 3 4 5 67 10-1 t [s] 2 3 4 5 56 100 2 3 4 5 67 101 For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows: IFAVM = -VF0 + (VF0)2 + 4 * f * rf * P 2 * f 2 * rf or 2 IFAVM (A) T max (°C) Rthja (K/kW) f= 2 P (W) Tc (°C) RthJC (K/kW) for DC current for half-sine wave for 120°el., sine for 60° el., sine VF0 (V) Ta (°C) rF (Ω ) where P= TJ max - TC Rthjc P= TJ max - TA Rthja 1 2.5 3.1 6 Doc. No. 5SYA 1119-01 Feb-98 ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306