5SDA14F4407

Key Parameters VRRM = 5000 IFAVM = 1410 IFSM = 17.5 VF0 = 1.13 rF = 0.44 V A kA V mΩ Avalanche Rectifier Diode 5SDA 14F5007 Doc. No. 5SYA 1126 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing Blocking Part number VRRM VRSM IRRM PRSM 5SDA 14F5007 5000 5500 ≤ ≤ ≤ 5SDA 14F4407 4400 5280 50 70 50 mA kW kW 5SDA 14F3807 3800 4180 Condition f tP tP tP = 50 Hz = 10 ms = 20 µs = 20 µs tP Tj Tj Tj Tj = 10 ms = 160°C = 160°C = 45°C = 160°C VRRM Mechanical data FM a Mounting force min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance Air strike distance 20 kN 24 kN 50 m/s2 200 m/s2 0.5 kg 30 mm 20 mm m DS Da ABB Semiconductors AG ABB Semiconductors AG 5SDA 14F5007 On-state IFAVM IFRMS IFSM It VF0 rF VF min VF max 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Threshold voltage Slope resistance On-state voltage On-state voltage 1410 A 2210 A 17.5 kA 19.0 kA 1530⋅103 A s 2 Half sine wave, TC = 85°C tp tp tp tp IF IF = = = = 10 ms 8.3 ms 10 ms 8.3 ms Tj = Tj = 160°C 25°C Tj = 160°C After surge: VR ≈ 0V 1500⋅10 A s 3 2 1.13 V 0.44 mΩ 2.00 V 2.40 V = 1000 - 3000 A = 4000 A Thermal Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink 40 K/kW Anode side cooled 40 K/kW Cathode side cooled 20 K/kW Double side cooled 10 K/kW Single side cooled 5 K/kW Double side cooled -40...160°C Analytical function for transient thermal impedance: 24 Zth Fm = 20...24 kN 20 16 12 8 Double Side Cooling ZthJC(t) = i R (K/kW) τI (s) 1 11.83 0.432 ∑ R (1- e i i =1 2 4.26 0.071 3 1.63 0.01 4 -t/τ i [K/kW] ) 4 2.28 4 0 10-3 0.0054 2 3 4 5 67 10-2 2 3 4 5 67 10-1 t [s] 2 3 4 5 56 100 2 3 4 5 67 101 For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows: IFAVM = -VF0 + (VF0)2 + 4 * f * rf * P 2 * f 2 * rf or 2 IFAVM (A) T max (°C) Rthja (K/kW) f= 2 P (W) Tc (°C) RthJC (K/kW) for DC current for half-sine wave for 120°el., sine for 60° el., sine VF0 (V) Ta (°C) rF (Ω ) where TJ max - TC P= Rthjc TJ max - TA P= Rthja 1 2.5 3.1 6 Doc. No. 5SYA 1126 - 01 Apr-98 ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306