5SDA24F2303

Key Parameters VRRM = 2300 IFAVM = 2350 IFSM = 29.0 VF0 = 0.84 rF = 0.13 V A kA V mΩ Avalanche Rectifier Diode 5SDA 24F2303 Doc. No. 5SYA 1131 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing Blocking Part number VRRM VRSM IRRM PRSM 5SDA 24F2303 2300 2530 5SDA 24F2003 2000 2200 ≤ 50 ≤ 100 ≤ 75 mA kW kW 5SDA 24F1703 1700 1870 Condition f tP tP tP = 50 Hz = 10 ms = 20 µs = 20 µs tP Tj Tj Tj Tj = 10 ms = 160°C = 160°C = 45°C = 160°C VRRM Mechanical data FM a Mounting force min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance Air strike distance 20 kN 24 kN 50 m/s2 200 m/s2 0.5 kg 30 mm 20 mm m DS Da ABB Semiconductors AG ABB Semiconductors AG 5SDA 24F2303 On-state IFAVM IFRMS IFSM It VF0 rF VF min VF max 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Threshold voltage Slope resistance On-state voltage On-state voltage 2350 A 3640 A 29.0 kA 30.5 kA 4205⋅103 A s 2 Half sine wave, TC = 85°C tp tp tp tp IF IF = = = = 10 ms 8.3 ms 10 ms 8.3 ms Tj = Tj = 160°C 25°C Tj = 160°C After surge: VD = VR = 0V 3875⋅10 A s 3 2 0.84 V 0.13 mΩ 1.20 V 1.35 V = 2000 - 6000 A = 4000 A Thermal Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink 40 K/kW Anode side cooled 40 K/kW Cathode side cooled 20 K/kW Double side cooled 10 K/kW Single side cooled 5 K/kW Double side cooled -40...160°C Analytical function for transient thermal impedance: 24 Zth Fm = 20...24 kN 20 16 12 8 Double Side Cooling ZthJC(t) = i R (K/kW) τi (s) 1 11.83 0.432 ∑ R (1- e i i =1 2 4.26 0.071 3 1.63 0.01 4 -t/τ i [K/kW] ) 4 2.28 4 0 10-3 0.0054 2 3 4 5 67 10-2 2 3 4 5 67 10-1 t [s] 2 3 4 5 56 100 2 3 4 5 67 101 For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows: IFAVM = -VF0 + (VF0)2 + 4 * f * rf * P 2 * f 2 * rf or 2 IFAVM (A) T max (°C) Rthja (K/kW) f= 2 P (W) Tc (°C) RthJC (K/kW) for DC current for half-sine wave for 120°el., sine for 60° el., sine VF0 (V) Ta (°C) rF (Ω ) where TJ max - TC P= Rthjc TJ max - TA P= Rthja 1 2.5 3.1 6 Doc. No. 5SYA 1131 - 01 Apr-98 ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306