5SDD0120C0200

VRRM IFAVM IFRMS IFSM VF0 rF = = = = = = 200 V 11000 A 17300 A 85000 A 0.75 V 0.020 mΩ Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking VRRM VRSM IRRM Repetitive peak reverse voltage Maximum peak reverse voltage Repetitive peak reverse current 200 V 300 V ≤ 50 mA Half sine wave, tP = 10 ms, f = 50 Hz Half sine wave, tP = 10 ms Tj = 170 °C VR = VRRM Mechanical FM a Mounting force min. max. Acceleration: Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 200 m/s2 0.22 kg 4 mm 4 mm 35 kN 40 kN Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 0120C0200 On-state IFAVM IFRMS IFSM ∫I2dt Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current 11000 A 17300 A 85000 A 92500 A Max. surge current integral tp = tp = 10 ms Before surge 8.3 ms Tj = 170 °C 10 ms After surge: Half sine wave, Tc = 85 °C 36100 kA2s tp = 35700 kA2s tp = 8.3 ms VR ≈ 0V 8000 A Tj = 170 °C VF max VF0 rF Maximum on-state voltage Threshold voltage Slope resistance ≤ 0.92 V 0.75 V 0.020 mΩ IF = Approximation for Tj = 170 °C IF = 8 - 18 kA Thermal characteristics Tj Tstg Rth(j-c) Operating junction temperature range Storage temperature range Thermal resistance junction to case -40...170 °C -40…170 °C ≤ ≤ ≤ Rth(c-h) Thermal resistance case to heatsink ≤ ≤ 12 K/kW Anode side cooled 12 K/kW Cathode side cooled 6 K/kW Double side cooled 6 K/kW Single side cooled 3 K/kW Double side cooled FM = 35…40 kN ZthJC [K/kW] 8 Double sided cooling Fm = 35...40 kN Z th ( j - c )(t) = i 1 3.37 0.095 Ri (K/kW) 5SDD 0120C0200 ∑ 2 4 R i (1 - e - t / τ i ) 3 0.63 0.0035 4 0.67 0.001 6 i =1 1.50 4 τi (s) 0.048 2 FM = 35…40 kN Double side cooled 0 10-3 10- 2 10-1 0 t [s] 10 Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 2 of 4 Doc. No. 5SYA1157-01 July 06 5SDD 0120C0200 On-state characteristics IF [A] 18000 16000 14000 12000 10000 8000 min. max. Surge current characteristics IFSM [kA] 140 5SDD 0120C0200 ∫ i2dt [MA2s] 44 Tj = 170°C 120 IFSM ∫i2t 40 Tj = 170°C 100 36 80 6000 5SDD 0120C0200 32 4000 2000 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 60 28 40 10 0 24 10 1 1.6 10 2 VF [V] t [ms] Fig. 3 Forward current vs. forward voltage (min. and max. values). Fig. 4 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses. Current load capability I D ( kA ) 28 26 24 22 20 18 16 1 10 5SDD 0120C0200 ID vs. ED, 1000 Hz square wave, TC = 100 °C n n n n = 50 = 100 = 500 = 1000 p u ls es p u ls es p u ls es p u ls es Duty cycle ED (%) 1 0 0 Fig. 5 DC-output current with single-phase centre tap ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 3 of 4 Doc. No. 5SYA1157-01 July 06 5SDD 0120C0200 Current load capacity, cont. ID ( k A ) 36 34 32 30 28 26 24 22 20 18 16 1 10 5SDD 0120C0200 ID vs. ED, 1000 Hz square-wave, Th = 60 °C n = 50 pulses n = 100 pulses n = 500 pulses n = 1000 pulses Duty cycle ED (%) 1 0 0 Fig. 6 DC-output current with single-phase centre tap ID + Fig. 7 Definition of ED for typical welding sequence Fig. 8 Definition of ID for single-phase centre tap ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1157-01 July 06