5SDD33L5500

VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 5500 3480 5470 46×103 0.94 0.147 V A A A V mΩ Rectifier Diode 5SDD 33L5500 Doc. No. 5SYA1168-00 March 05 • Patented free-floating silicon technology • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Characteristic values Symbol Conditions VRRM VRSM f = 50 Hz, tp = 10ms, Tj = 0...150°C f = 5 Hz, tp = 10ms, Tj = 0...150°C Value 5000 5500 Unit V V Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 150°C min typ max 400 Unit mA Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 63 typ 70 max 77 50 100 Unit kN m/s m/s 2 2 Parameter W eight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 70 kN, Ta = 25 °C min 26.0 35 typ max 1.45 26.6 Unit kg mm mm mm Air strike distance Da 14 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 33L5500 On-state Maximum rated values 1) Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Symbol Conditions IF(AV)M IF(RMS) IFSM I2t IFSM I2t tp = 8.3 ms, Tj = 150°C, VR = 0 V tp = 10 ms, Tj = 150°C, VR = 0 V 50 Hz, Half sine wave, TC = 90 °C min typ max 3480 5470 46×10 3 Unit A A A A2s A A2s 10.6×10 49.2×10 6 3 10.06×10 6 Characteristic values Parameter On-state voltage Threshold voltage Slope resistance Symbol Conditions VF V(T0) rT IF = 5000 A, Tj = 150°C Tj = 150°C IT = 3000...8000 A min typ max 1.68 0.94 0.147 Unit V V mΩ Switching Characteristic values Parameter Symbol Conditions Qrr diF/dt = -10 A/µs, VR = 200 V IFRM = 4000 A, Tj = 150°C min typ max 10000 Unit µAs Recovery charge ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1168-00 March 05 page 2 of 6 5SDD 33L5500 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min 0 -40 min typ max 150 150 Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 63...77 kN Anode-side cooled Fm = 63...77 kN Cathode-side cooled Fm = 63...77 kN Double-side cooled Fm = 63...77 kN Single-side cooled Fm = 63...77 kN typ max 7 14 14 1.5 3 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i Rth i(K/kW) τi(s) 1 4.701 0.5463 2 1.401 0.0746 3 0.611 0.0087 4 0.298 0.0021 Fig. 1 Transient thermal impedance junction-tocase. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1168-00 March 05 page 3 of 6 5SDD 33L5500 Max. on-state characteristic model: VF25 = A25 -352.00×10 -6 Max. on-state characteristic model: VF150 = A150 95.90×10-6 ATvj + BTvj ⋅ I F + CTvj ⋅ ln(I F +1) + DTvj ⋅ I F Valid for IF = 300 – 70000 A B25 C25 38.50×10 -6 ATvj + BTvj ⋅ I F + CTvj ⋅ ln(I F +1) + DTvj ⋅ I F Valid for IF = 300 – 70000 A B150 89.80×10-6 D25 4.47×10-3 C150 90.50×10-3 D150 6.60×10-3 127×10 -3 Fig. 2 Isothermal on-state characteristics Fig. 3 Isothermal on-state characteristics Fig. 4 On-state power losses vs average on-state current. Fig. 5 Max. permissible case temperature vs average on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1168-00 March 05 page 4 of 6 5SDD 33L5500 Fig. 6 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. Fig. 8 Recovery charge vs. decay rate of on-state current. Fig. 9 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1168-00 March 05 page 5 of 6 5SDD 33L5500 Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr 5SYA 2020 5SYA 2029 5SYA 2036 Titel Design of RC-Snubbers for Phase Control Applications Designing Large Rectifiers with High Power Diodes Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1168-00 March 05