5SDD38H5000

VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45×103 0.903 0.136 V A A A V mΩ Rectifier Diode 5SDD 38H5000 Doc. No. 5SYA1177-00 Feb. 06 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1 Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Characteristic values Symbol Conditions VRRM VRSM f = 50 Hz, tp = 10ms, Tj = -40...160°C f = 50 Hz, tp = 10ms, Tj = -40...160°C min typ Value 5000 5000 max 110 Unit V V Unit mA Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 160°C Derating factor of 0.13% per °C is applicable for Tj below 0 °C. Mechanical data Maximum rated values Note 1 Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 45 typ 50 max 55 50 100 Unit kN m/s m/s 2 2 Parameter W eight Housing thickness Surface creepage distance Air strike distance Symbol Conditions m H DS Da FM = 50 kN, Ta = 25 °C min 25.5 40 20 typ 0.9 max 26.5 Unit kg mm mm mm Note 1 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 38H5000 On-state Maximum rated values Note 1 Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Symbol Conditions IF(AV)M IF(RMS) IFSM I2t IFSM I2t tp = 8.3 ms, Tj = 160°C, VR = 0 V tp = 10 ms, Tj = 160°C, VR = 0 V 50 Hz, Half sine wave, TC = 85 °C min typ max 3810 5990 45×10 3 Unit A A A A2s A A2s 9.6×10 48×10 6 3 10.1×10 6 Characteristic values Parameter On-state voltage Threshold voltage Slope resistance Symbol Conditions VF V(T0) rT IF = 4000 A, Tj = 160°C Tj = 160°C IT = 6000...18000 A min typ max 1.43 0.903 0.136 Unit V V mΩ Switching Characteristic values Parameter Symbol Conditions Qrr diF/dt = -30 A/µs, VR = 100 V IFRM = 2000 A, Tj = 160°C min typ 9000 max Unit µAs Recovery charge ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1177-00 Feb. 06 page 2 of 6 5SDD 38H5000 Thermal Maximum rated values Note 1 Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min -40 -40 min typ max 160 160 Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 45...55 kN Anode-side cooled Fm = 45...55 kN Cathode-side cooled Fm = 45...55 kN Double-side cooled Fm = 45...55 kN Single-side cooled Fm = 45...55 kN 9 Tr ans ie nt t he r m al im pe dance junct ion t o cas e Zthjc ( K/k W ) 8 7 6 5 4 3 2 1 0 0,001 0,01 typ max 8 14.5 18.0 2.5 5.0 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = ∑ R th i (1 - e i =1 i Rth i(K/kW) τi(s) 1 4.533 0.4406 2 2.255 0.1045 3 0.868 0.0092 n - t/τ i 4 ) 0.345 0.0022 0,1 1 10 Square w ave pulse duration t d ( s ) Fig. 1 Transient thermal impedance junction-to-case ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1177-00 Feb. 06 page 3 of 6 5SDD 38H5000 20000 IF ( A ) 18000 16000 14000 12000 10000 8000 6000 4000 2000 0 0 1 2 3 VF (V) 4 T j = 2 5 °C 160 °C Fig. 2 Max. on-state characteristics 100 IFS M ( k A ) 20 IFSM ( k A ) 50 90 i 2dt (106 A2s ) 40 80 ∫ i2dt 15 70 30 VR = 0 V 20 60 10 50 V R ≤ 0.5 V RRM 10 30 I FSM 0 1 10 100 Number n of cycles at 50 Hz 40 5 20 1 10 t ( ms ) 0 100 Fig. 3 Surge forward current vs. pulse length, half sine wave, single pulse, VR = 0 V Fig. 4 Surge forward current vs. number of pulses, half sine wave, VR = 0 V ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1177-00 Feb. 06 page 4 of 6 5SDD 38H5000 PT ( W ) 10000 ψ = 6 0° 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1000 2000 3000 PT ( W ) 10000 120° 180° ψ = 3 0° 9000 8000 6 0° 9 0° 1 20° 1 80° 2 70° DC DC 7000 6000 5000 4000 3000 2000 1000 0 4000 5000 I FAV ( A ) 0 1000 2000 3000 4000 5000 I FAV ( A ) Fig. 5 Forward power loss vs. average forward current, sine waveform, f = 50 Hz TC ( °C ) 160 Fig. 6 Forward power loss vs. average forward current, square waveform, f = 50 Hz TC ( °C ) 160 140 140 120 120 100 100 DC 2 70° DC 80 80 60 0 1000 ψ = 6 0° 2000 1 20° 3000 180° 60 4000 5000 0 ψ = 3 0° 1000 6 0° 2000 9 0° 1 20° 3000 4000 180° 5000 I FAV ( A ) I FAV ( A ) Fig. 7 Max. case temperature vs aver. forward current, sine waveform, f = 50 Hz Fig. 8 Max. case temperature vs aver. forward current, square waveform, f = 50 Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1177-00 Feb. 06 page 5 of 6 5SDD 38H5000 Fig. 9 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise Related documents: 5SYA 2020 5SYA 2029 5SYA 2036 Design of RC-Snubbers for Phase Control Applications Designing Large Rectifiers with High Power Diodes Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1177-00 Feb. 06