5SDD71X0200

VRRM IFAVM IFRMS IFSM VF0 rF = = = = = = 200 V 7110 A 11200 A 55000 A 0.74 V 0.026 mΩ Rectifier Diode 5SDD 71X0200 Doc. No. 5SYA1156-01 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking VRRM VRSM IRRM Repetitive peak reverse voltage Maximum peak reverse voltage Repetitive peak reverse current 200 V 300 V ≤ 50 mA Half sine wave, tP = 10 ms, f = 50 Hz Half sine wave, tP = 10 ms Tj = 170 °C VR = VRRM Mechanical FM a Mounting force min. max. Acceleration: Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 200 m/s2 0.14 kg 4 mm 4 mm 20 kN 24 kN Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 71X0200 On-state IFAVM IFRMS IFSM ∫I2dt Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current 7110 A 11200 A 55000 A 60000 A Max. surge current integral tp = tp = 10 ms Before surge 8.3 ms Tj = 170 °C 10 ms After surge: Half sine wave, Tc = 85 °C 15100 kA2s tp = 15000 kA2s tp = 8.3 ms VR ≈ 0V 5000 A Tj = 25 °C VF max VF0 rF Maximum on-state voltage Threshold voltage Slope resistance ≤ 1.05 V 0.74 V 0.026 mΩ IF = Approximation for Tj = 170 °C IF = 5 - 15 kA Thermal characteristics Tj Tstg Rth(j-c) Operating junction temperature range Storage temperature range Thermal resistance junction to case -40...170 °C -40…170 °C ≤ ≤ ≤ Rth(c-h) Thermal resistance case to heatsink ≤ ≤ 20 K/kW Anode side cooled 20 K/kW Cathode side cooled 10 K/kW Double side cooled 10 K/kW Single side cooled 5 K/kW Double side cooled FM = 20…24 kN ZthJC [K/kW] 12 Double Side Cooled 10 Fm = 20...24 kN Z th ( j - c )(t) = i Ri (K/kW) τi (s) 5SDD 71X0200 ∑ 2 4 R i (1 - e - t / τ i ) 3 0.87 0.0034 4 0.55 0.00013 i =1 3.30 8 1 5.28 0.07 6 4 0.039 2 FM = 20… 24 kN Double side cooled 0 10-3 10-2 10-1 t [s] 100 Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 2 of 4 Doc. No. 5SYA1156-01 July 06 5SDD 71X0200 On-state characteristics IF [A] 20000 18000 16000 14000 Surge current characteristics IFSM [kA] 100 5SDD 71X0200 ∫ i2dt [MA2s] 22 Tj = 170°C 90 Tj = 170°C 20 IFSM 80 18 12000 10000 8000 min. max. 70 16 60 6000 4000 2000 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 14 5SDD 71X0200 50 ∫i2t 12 40 10 0 10 10 1 1.6 10 2 VF [V] t [ms] Fig. 3 Forward current vs. forward voltage (min. and max. values). Fig. 4 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses. Current load capability I D ( kA ) 16 ID vs. ED, 1000 Hz square wave, TC = 100 °C n n n n = 50 = 100 = 500 = 1000 p u l s es p u ls es p u ls es p u ls es 15 14 13 12 5S D D 71X 0200 11 10 1 10 Duty cycle ED (%) 100 Fig. 5 DC-output current with single-phase centre tap ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 3 of 4 Doc. No. 5SYA1156-01 July 06 5SDD 71X0200 Current load capacity, cont. ID ( k A ) 22 20 18 16 14 12 10 1 10 5S D D 7 1X 0200 ID vs. ED, 1000 Hz square-wave, Th = 60 °C n n n n = 50 = 100 = 500 = 1000 p u ls es p u ls es p u ls es p u ls es Duty cycle ED (%) 1 0 0 Fig. 6 DC-output current with single-phase centre tap ID + Fig. 7 Definition of ED for typical welding sequence Fig. 8 Definition of ID for single-phase centre tap ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1156-01 July 06