5SDF02D6004

VRRM IF(AV)M IFSM V(T0) rT VDC-link = = = = = = 5500 175 3×103 3.35 7.2 3300 V A A V mΩ V Fast Recovery Diode 5SDF 02D6004 PRELIMINARY Doc. No. 5SYA1118-02 Okt. 02 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating • Low on-state and switching losses • Optimized for snubberless operation Blocking Maximum rated values 1) Parameter Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate Characteristic values Symbol Conditions VRRM VDC-link VDC-link f = 50 Hz, tp = 10ms, Tvj = 115°C Ambient cosmic radiation at sea level in open air. (100% Duty) Ambient cosmic radiation at sea level in open air. (5% Duty) min typ Value 5500 3300 3900 Unit V V V Parameter Repetitive peak reverse current Symbol Conditions IRRM VR = VRRM, Tvj = 115°C max 20 Unit mA Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions Fm a a Device unclamped Device clamped min 14 typ 16 max 18 50 200 Unit kN m/s m/s Unit kg mm mm mm 2 2 Parameter W eight Housing thickness Surface creepage distance Air strike distance Symbol Conditions m H DS Da min 26.0 30 20 typ max 0.25 26.6 Note 1 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDF 02D6004 On-state Maximum rated values 1) Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IF(AV)M IF(RMS) IFSM I2t IFSM I2t Symbol Conditions VF V(T0) rT IF = 520 A, Tvj = 115°C Tvj = 115°C IF = 200...1000 A tp = 1 ms, Tvj = 115°C, VR = 0 V tp = 10 ms, Tvj = 115°C, VR = 0 V Half sine wave, TC = 70 °C min typ max 175 275 3×10 3 Unit A A A A2s A A2s Unit V V mΩ 45×10 8×10 3 3 32×10 min typ max 7.1 3.35 7.2 3 Parameter On-state voltage Threshold voltage Slope resistance Turn-on Characteristic values Parameter Peak forward recovery voltage Symbol Conditions VFRM dIF/dt = 1000 A/µs, Tvj = 115°C min typ max 370 Unit V Turn-off Maximum rated values 1) Parameter Symbol Conditions IFM = A, Tvj = 115 °C VDC-link = 3300 V min typ max 220 Unit A/µs Max. decay rate of on-state di/dtcrit current Characteristic values Parameter Reverse recovery current Reverse recovery charge Turn-off energy Symbol Conditions IRM Qrr Err IFQ = 520 A, VDC-Link = 3300 V di/dt = 220 A/µs, LCL = nH CCL = µF, RCL = Ω, Tj = 115°C min typ max 300 1.8 Unit A µC J ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1118-02 Okt. 02 page 2 of 5 5SDF 02D6004 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min -40 -40 min typ max 115 125 Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 14...18 kN Anode-side cooled Fm = 14...18 kN Cathode-side cooled Fm = 14...18 kN Double-side cooled Fm = 14...18 kN Single-side cooled Fm = 14...18 kN typ max 40 80 80 8 16 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i Rth i(K/kW) τi(s) 1 25.699 0.3802 2 9.472 0.0483 3 3.381 0.0060 4 1.466 0.0018 n Fig. 1 Transient thermal impedance (junction to case) vs. time in analytical and graphical form (max. values) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1118-02 Okt. 02 page 3 of 5 5SDF 02D6004 IF [A] 1200 1100 1000 900 800 250 700 600 500 150 400 300 200 50 100 0 3 4 5 6 7 8 9 10 11 0 0 100 200 300 400 500 600 100 200 300 Tj = 115°C 350 Irr [A] 400 Tj = 115°C diF/dt = 190 A/µs VDClink = 3300 V VF [V] IFQ [A] Fig. 2 Forward current vs. forward voltage Fig. 3 Diode reverse recovery current vs. turn-off current IFQ [A] 600 Err [J] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 Tj = 115°C diF/dt = 190 A/µs VDClink = 3300 V 500 400 Tj = 0 - 115°C diF/dt = 190 A/µs VRM ≤ VRRM 300 200 0.6 0.4 0.2 0.0 0 100 200 300 400 500 600 0 0 1000 2000 3000 4000 5000 100 IFQ [A] VDClink [V] Fig. 4 Diode turn-off energy per pulse vs. turn-off current Fig. 5 Max. repetitive diode forward current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1118-02 Okt. 02 page 4 of 5 5SDF 02D6004 VF(t), IF (t) dIF/dt VFR IF (t) -dIF/dt IF (t) Qrr VF (t) tfr tfr (typ) 10 µs IRM VR (t) VF (t) t Fig. 6 General current and voltage waveforms Fig. 7 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise Related documents: Doc. Nr 5SYA 2036 5SZK 9104 5SZK 9105 Titel Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1118-02 Okt. 02