5SDF03D4501

VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V mΩ V Fast Recovery Diode 5SDF 03D4501 Doc. No. 5SYA1106-02 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters • Industry standard press-pack ceramic housing, hermetically cold-welded • Cosmic radiation withstand rating Blocking VRRM IRRM VDClink VDClink Repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate ≤ 4500 V 50 mA 2400 2800 V V Half sine wave, tP = 10 ms, f = 50 Hz VR = VRRM, Tj = 125°C 100% Duty 5% Duty Ambient cosmic radiation at sea level in open air. Mechanical data Fm a Mounting force (see Fig. 8) min. max. 10 kN 12 kN 2 2 Acceleration: Device unclamped Device clamped 50 m/s 200 m/s 0.25 kg ≥ ≥ 30 mm 20 mm m DS Da Weight Surface creepage distance Air strike distance ABB Semiconductors AG reserves the right to change specifications without notice. 5SDF 03D4501 On-state (see Fig. 2, 3) IFAVM IFRMS IFSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current òI2dt Max. surge current integral 320 A 500 A 5 kA 12 kA 2 125⋅103 A s 2 72⋅103 A s Half sine wave, Tc = 85°C tp tp tp tp IF = = = = = 10 ms 1 ms 10 ms 1 ms 1000 A Before surge: Tc = Tj = 125°C After surge: VR ≈ 0 V VF VF0 rF Forward voltage drop Threshold voltage Slope resistance ≤ 3.5 V 2V 1.5 mΩ Approximation for IF = 200…3000 A Tj = 125°C Turn-on (see Fig. 4, 5) Vfr Peak forward recovery voltage ≤ 140 V di/dt = 1000 A/µs, Tj = 125°C Turn-off (see Fig. 6, 7) Irr Qrr Err Reverse recovery current Reverse recovery charge Turn-off energy ≤ ≤ ≤ 200 A 1000 µC -- J di/dt = 100 A/µs, IF = 2000 A, RS = 22 Ω, Tj = 125 °C, VRM = 4500 V, CS = 0.22 µF Thermal (see Fig. 1) Tj Tstg RthJC Operating junction temperature range Storage temperature range Thermal resistance junction to case ≤ ≤ ≤ RthCH Thermal resistance case to heatsink ≤ ≤ Analytical function for transient thermal impedance. -40...125°C -40...125°C 80 K/kW 80 K/kW 40 K/kW 16 K/kW 8 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled Fm = 10… 12 kN Z thJC (t) = å n i 1 20.95 0.396 2 10.57 0.072 3 7.15 0.009 4 1.33 0.0044 R i (1 - e - t /τ i ) R i(K/kW) i =1 τi(s) Fm = 10… 12 kN Double side cooled ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1106-02 Sep. 01 page 2 of 5 5SDF 03D4501 Fig. 1 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values). Fig. 2 Forward current vs. forward voltage (typ. and max. values) and linear approximation of max. curve at 125°C. Fig. 3 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1106-02 Sep. 01 page 3 of 5 5SDF 03D4501 200 180 160 Vfr (V) 140 120 100 80 60 40 20 0 0 200 400 600 800 di/dt (A/µs) 1000 25°C 125°C Fig. 4 Typical forward voltage waveform when the diode is turned on with a high di/dt. Fig. 5 Forward recovery voltage vs. turn-on di/dt (max. values). Fig. 6 Typical current and voltage waveforms at turn-off with conventional RC snubber circuit. Fig. 7 Reverse recovery current and reverse recovery charge vs. di/dt (max. values). ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1106-02 Sep. 01 page 4 of 5 5SDF 03D4501 Fig. 8 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1106-02 Sep. 01