5SDF03D4502

VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 275 5 2.15 2.8 2800 V A kA V mΩ V Fast Recovery Diode 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA1117-02 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating • Low on-state and switching losses • Optimized to use in snubberless operation Blocking VRRM IRRM VDClink VDClink Repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate ≤ 4500 V 20 mA 2800 3200 V V Half sine wave, tP = 10 ms, f = 50 Hz VR = VRRM, Tj = 115°C 100% Duty 5% Duty Ambient cosmic radiation at sea level in open air. Mechanical data Fm a Mounting force (see Fig. 7) min. max. 14 kN 18 kN 2 2 Acceleration: Device unclamped Device clamped 50 m/s 200 m/s 0.25 kg ≥ ≥ 30 mm 20 mm m DS Da Weight Surface creepage distance Air strike distance ABB Semiconductors AG reserves the right to change specifications without notice. 5SDF 03D4502 On-state (see Fig. 1, 2) IFAVM IFRMS IFSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current òI2dt Max. surge current integral 275 A 435 A 5 kA 10 kA 2 ⋅103 A s 2 50⋅103 A s Half sine wave, Tc = 70°C tp tp tp tp IF = = = = = 10 ms 1 ms 10 ms 1 ms 630 A Before surge: Tc = Tj = 115°C After surge: VR ≈ 0 V VF VF0 rF Forward voltage drop Threshold voltage Slope resistance ≤ 3.9 V 2.15 V 2.8 mΩ Approximation for IF = 200…1000 A Tj = 115°C Turn-on Vfr Peak forward recovery voltage ≤ 370 V di/dt = 1000 A/µs, Tj = 115°C Turn-off (see Fig. 3, 4) di/dtcrit Irr Qrr Err Max. decay rate of on-state current Reverse recovery current Reverse recovery charge Turn-off energy ≤ ≤ ≤ ≤ 300 A/µs 355 A 930 µC 1.8 J IF = 630 A, VDclink = 2800 V Tj = 115 °C Thermal Tj Tstg RthJC Operating junction temperature range Storage temperature range Thermal resistance junction to case ≤ ≤ ≤ RthCH Thermal resistance case to heatsink ≤ ≤ Analytical function for transient thermal impedance. -40...115°C -40...125°C 80 K/kW 80 K/kW 40 K/kW 16 K/kW 8 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled Fm = 14… 18 kN Z thJC (t) = å n i 1 20.95 0.396 2 10.57 0.072 3 7.15 0.009 4 1.33 0.0044 R i (1 - e - t /τ i ) R i(K/kW) i =1 τi(s) Fm = 14… 18 kN Double side cooled ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1117-02 Sep. 01 page 2 of 5 5SDF 03D4502 IF [A] 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Tj = 115°C VF [V] Fig. 1 Typical forward voltage waveform when the diode is turned on with high di/dt. Fig. 2 Forward current vs. forward voltage. Irr [A] 400 Tj = 115°C 350 300 diF/dt = 250 A/µs VDClink = 2700 V Err [J] 2.0 1.8 1.6 1.4 Tj = 115°C diF/dt = 250 A/µs VDClink = 2700 V 250 200 150 100 1.2 1.0 0.8 0.6 0.4 50 0 0 100 200 300 400 500 600 700 0.2 0.0 IFQ [A] 0 100 200 300 400 500 600 700 IFQ [A] Fig. 3 Diode reverse recovery current vs. turnoff current. Fig. 4 Diode turn-off energy per pulse vs. turnoff current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1117-02 Sep. 01 page 3 of 5 5SDF 03D4502 IFQ [A] 900 800 700 600 500 400 300 200 100 0 0 1000 2000 3000 4000 Tj = 0 - 115°C diF/dt = 250 A/µs VRM ≤ VRRM VDClink [V] Fig. 5 Typical current and voltage waveforms at turn-off in a circuit with voltage clamp. Fig. 6 Max. repetitive diode forward current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1117-02 Sep. 01 page 4 of 5 5SDF 03D4502 Fig. 7 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1117-02 Sep. 01