5SDF04F6004

VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 5500 380 10 2.7 2.8 3300 V A kA V mΩ V Fast Recovery Diode 5SDF 04F6004 Doc. No. 5SYA1150-02 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating • Low on-state and switching losses • Optimized to use in snubberless operation Blocking VRRM IRRM VDClink VDClink Repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate ≤ 5500 V 20 mA 3300 3900 V V Half sine wave, tP = 10 ms, f = 50 Hz VR = VRRM, Tj = 115°C 100% Duty 5% Duty Ambient cosmic radiation at sea level in open air. Mechanical data Fm a Mounting force min. max. 18 kN 22 kN 2 2 Acceleration: Device unclamped Device clamped 50 m/s 200 m/s 0.46 kg ≥ ≥ 33 mm 20 mm m DS Da Weight Surface creepage distance Air strike distance ABB Semiconductors AG reserves the right to change specifications without notice. 5SDF 04F6004 On-state (see Fig. 1, 2) IFAVM IFRMS IFSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current òI2dt Max. surge current integral 380 A 600 A 10 kA 22 kA 2 0.5⋅106 A s 2 0.24⋅106 A s Half sine wave, Tc = 70°C tp tp tp tp IF = = = = = 10 ms 1 ms 10 ms 1 ms 900 A Before surge: Tc = Tj = 115°C After surge: VR ≈ 0 V VF VF0 rF Forward voltage drop Threshold voltage Slope resistance ≤ 5.2 V 2.7 V 2.8 mΩ Approximation for IF = 200…2000 A Tj = 115°C Turn-on (see Fig. 3, 4) Vfr Peak forward recovery voltage ≤ 370 V di/dt = 1000 A/µs, Tj = 115°C Turn-off di/dtcrit Irr Qrr Err Max. decay rate of on-state current Reverse recovery current Reverse recovery charge Turn-off energy ≤ ≤ ≤ ≤ 340 A/µs 600 A µC 3.5 J IF = 900 A, VDclink = 3300 V Tj = 115 °C Thermal Tj Tstg RthJC Operating junction temperature range Storage temperature range Thermal resistance junction to case ≤ ≤ ≤ RthCH Thermal resistance case to heatsink ≤ ≤ Analytical function for transient thermal impedance. -40...115°C -40...125°C 44 K/kW 44 K/kW 22 K/kW 10 K/kW 5 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled Fm = 18… 22 kN Z thJC (t) = å n i 1 9.74 0.387 2 3.12 0.0457 3 1.18 0.006 4 0.52 0.0018 R i (1 - e - t /τ i ) R i(K/kW) i =1 τi(s) Fm = 18… 22 kN Double side cooled ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1150-02 Sep. 01 page 2 of 5 5SDF 04F6004 IF [A] 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 3 4 5 6 7 8 9 Tj = 115°C VF [V] Fig. 1 Typical forward voltage waveform when the diode is turned on with high di/dt. Fig. 2 Forward current vs. forward voltage. Irr [A] 700 Tj = 115°C 600 diF/dt = 290 A/µs VDClink = 3300 V Err [J] 4.0 3.5 3.0 2.5 Tj = 115°C diF/dt = 290 A/µs VDClink = 3300 V 500 400 2.0 300 1.5 200 1.0 0.5 0.0 0 200 400 600 800 1000 100 0 IFQ [A] 0 200 400 600 800 1000 IFQ [A] Fig. 3 Diode reverse recovery current vs. turnoff current. Fig. 4 Diode turn-off energy per pulse vs. turnoff current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1150-02 Sep. 01 page 3 of 5 5SDF 04F6004 IFQ [A] 1000 900 800 700 600 500 400 300 200 100 0 0 1000 2000 3000 4000 5000 Tj = 0 - 115°C diF/dt = 290 A/µs VRM ≤ VRRM VDClink [V] Fig. 5 Typical current and voltage waveforms at turn-off in a circuit with voltage clamp. Fig. 6 Max. repetitive diode forward current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1150-02 Sep. 01 page 4 of 5 5SDF 04F6004 Fig. 7 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1150-02 Sep. 01