5SDF10H4503

VRRM IF(AV)M IFSM V(T0) rT VDClink = = = = = = 4500 1100 20×103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4503 Doc. No. 5SYA1163-01 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating • Low on-state and switching losses • Optimized for snubberless operation Blocking Maximum rated values 1) Parameter Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate Characteristic values Symbol Conditions VRRM VDC-link VDC-link f = 50 Hz, tp = 10ms, Tvj = 125°C Ambient cosmic radiation at sea level in open air. (100% Duty) Ambient cosmic radiation at sea level in open air. (5% Duty) min typ Value 4500 2800 3200 Unit V V V Parameter Repetitive peak reverse current Symbol Conditions IRRM VR = VRRM, Tvj = 125°C max 50 Unit mA Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions Fm a a Device unclamped Device clamped min 36 typ 40 max 46 50 200 Unit kN m/s m/s Unit kg mm mm mm 2 2 Parameter W eight Housing thickness Surface creepage distance Air strike distance Symbol Conditions m H DS Da min 26.0 33 20 typ max 0.83 26.4 Note 1 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDF 10H4503 On-state Maximum rated values 1) Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IF(AV)M IF(RMS) IFSM I2t IFSM I2t Symbol Conditions VF V(T0) rT IF = 2500 A, Tvj = 125°C Tvj = 125°C IF = 500...2500 A tp = 30 ms, Tvj = 125°C, VR = 0 V tp = 10 ms, Tvj = 125°C, VR = 0 V Half sine wave, TC = 70 °C min typ max 1100 1740 20×10 2×10 3 Unit A A A A2s A A2s Unit V V mΩ 6 3 12×10 2.16×10 min typ 3.1 max 3.8 1.75 0.88 6 Parameter On-state voltage Threshold voltage Slope resistance Turn-on Characteristic values Parameter Peak forward recovery voltage Symbol Conditions VFRM dIF/dt = 600 A/µs, Tvj = 125°C dIF/dt = 3000 A/µs, Tvj = 125°C min typ max 80 250 Unit V V Turn-off Maximum rated values 1) Parameter Symbol Conditions IFM = 4000 A, Tvj = 125 °C VDC-link = 2800 V min typ max 600 Unit A/µs Max. decay rate of on-state di/dtcrit current Characteristic values Parameter Reverse recovery current Reverse recovery charge Turn-off energy Symbol Conditions IRM Qrr Err IFM = 3300 A, VDC-Link = 2800 V -dIF/dt = 600 A/µs, LCL = 300 nH CCL = 10 µF, RCL = 0.65 Ω, Tvj = 125°C, DCL = 5SDF 10H4503 min typ max 1520 5250 9.5 Unit A µC J ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1163-01 Oct. 06 page 2 of 7 5SDF 10H4503 Thermal Maximum rated values Note 1 Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min 0 -40 min typ max 125 125 Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 36...46 kN Anode-side cooled Fm = 36...46 kN Cathode-side cooled Fm = 36...46 kN Double-side cooled Fm = 36...46 kN Single-side cooled Fm = 36...46 kN typ max 12 24 24 3 6 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i Rth i(K/kW) τi(s) 1 7.705 0.5244 2 2.748 0.0633 3 1.009 0.0065 4 0.539 0.0015 Fig. 1 Transient thermal impedance junction-to-case n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1163-01 Oct. 06 page 3 of 7 5SDF 10H4503 Max. on-state characteristic model: VF0 = A0 915.50×10-3 Max. on-state characteristic model: VF125 = A125 -1.49 ATvj + BTvj ⋅ I F + CTvj ⋅ ln(I F +1) + DTvj ⋅ I F Valid for IF = 300 – 30000 A B0 C0 347.20×10-6 202.5×10-3 ATvj + BTvj ⋅ I F + CTvj ⋅ ln(I F +1) + DTvj ⋅ I F Valid for IF = 300 – 30000 A B125 352.90×10-6 D0 0.00 C125 561.70×10-3 D125 0.00 Fig. 2 Max. on-state voltage characteristics Fig. 3 Max. on-state voltage characteristics Fig. 4 Surge on-state current vs. pulse length. Halfsine wave Fig. 5 Surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1163-01 Oct. 06 page 4 of 7 5SDF 10H4503 Fig. 6 Upper scatter range of turn-off energy per pulse vs. turn-off current Fig. 7 Upper scatter range of turn-off energy per pulse vs reverse current rise rate Fig. 8 Upper scatter range of repetitive reverse recovery charge vs reverse current rise rate. Fig. 9 Upper scatter range of reverse recovery current vs reverse current rise rate ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1163-01 Oct. 06 page 5 of 7 5SDF 10H4503 Fig. 10 Diode Safe Operating Area VF(t), IF (t) dIF/dt VFR IF (t) -dIF/dt IF (t) Qrr VF (t) tfr tfr (typ) 10 µs IRM VR (t) VF (t) t Fig. 11 General current and voltage waveforms Li LCL RS DCL IF VLC CCL DUT LLoad Fig. 12 Test circuit. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1163-01 Oct. 06 page 6 of 7 5SDF 10H4503 Fig. 13 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise Related documents: Doc. Nr 5SYA 2036 5SZK 9104 5SZK 9105 Titel Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1163-01 Oct. 06