5SDF11F2501

VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 950 21 1.2 0.38 1500 V A kA V mΩ V Fast Recovery Diode 5SDF 11F2501 Doc. No. 5SYA1113-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters • Standard press-pack housing, hermetically cold-welded • Cosmic radiation withstand rating Blocking VRRM IRRM VDClink VDClink Repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate ≤ 2500 V 50 mA 1500 V V Half sine wave, tP = 10 ms, f = 50 Hz VR = VRRM, Tj = 125°C 100% Duty 5% Duty Ambient cosmic radiation at sea level in open air. Mechanical data Fm a Mounting force (see Fig. 12) min. max. 20 kN 24 kN 2 2 Acceleration: Device unclamped Device clamped 50 m/s 200 m/s 0.46 kg ≥ ≥ 30 mm 20 mm m DS Da Weight Surface creepage distance Air strike distance ABB Semiconductors AG reserves the right to change specifications without notice. 5SDF 11F2501 On-state (see Fig. 2, 3) IFAVM IFRMS IFSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current òI2dt Max. surge current integral 950 A 1500 A 21 kA 65 kA 2 2.2⋅106 A s 2 2.1⋅106 A s Half sine wave, Tc = 85°C tp tp tp tp IF = = = = = 10 ms 1 ms 10 ms 1 ms 1000 A Before surge: Tc = Tj = 125°C After surge: VR ≈ 0 V VF VF0 rF Forward voltage drop Threshold voltage Slope resistance ≤ 1.6 V 1.2 V 0.38 mΩ Approximation for IF = 400…4000 A Tj = 125°C Turn-on (see Fig. 4, 5) Vfr Peak forward recovery voltage ≤ 16 V di/dt = 500 A/µs, Tj = 125°C Turn-off (see Fig. 6 to 11) Irr Qrr Err Reverse recovery current Reverse recovery charge Turn-off energy ≤ ≤ ≤ 550 A 1200 µC 0.45 J di/dt = 300 A/µs, Tj = 125°C, IF = 700 A, VRM = 2600 V, CS = 2µF (GTO snubber circuit) Thermal (see Fig. 1) Tj Tstg RthJC Operating junction temperature range Storage temperature range Thermal resistance junction to case ≤ ≤ ≤ RthCH Thermal resistance case to heatsink ≤ ≤ Analytical function for transient thermal impedance. -40...125°C -40...125°C 40 K/kW 40 K/kW 20 K/kW 10 K/kW 5 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled Fm = 20… 24 kN Z thJC (t) = å n i 1 11.83 0.432 2 4.26 0.071 3 1.63 0.01 4 2.28 0.0054 R i (1 - e - t /τ i ) R i(K/kW) i =1 τi(s) Fm = 20… 24 kN Double side cooled ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1113-04 Sep. 01 page 2 of 6 5SDF 11F2501 Fig. 1 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values). Fig. 2 Forward current vs. forward voltage (typ. and max. values) and linear approximation of max. curve at 125°C. Fig. 3 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1113-04 Sep. 01 page 3 of 6 5SDF 11F2501 Fig. 4 Typical forward voltage waveform when the diode is turned on with a high di/dt. Fig. 5 Forward recovery voltage vs. turn-on di/dt (max. values). Fig. 6 Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber, as often used in GTO circuits. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1113-04 Sep. 01 page 4 of 6 5SDF 11F2501 Fig. 7 Reverse recovery current vs. turn off di/dt (max. values). Fig. 8 Reverse recovery charge vs. turn off di/dt (max. values). Fig. 9 Turn-off energy vs. turn-off di/dt for IF = 300 A (max. values). Fig. 10 Turn-off energy vs. turn-off di/dt for IF = 700 A (max. values). ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1113-04 Sep. 01 page 5 of 6 5SDF 11F2501 Fig. 11 Turn-off energy vs. turn-off di/dt for IF = 2000 A (max. values). Fig. 12 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1113-04 Sep. 01