5SGA25H2501

VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V mΩ V Gate turn-off Thyristor 5SGA 25H2501 Doc. No. 5SYA1206-01 Dec. 04 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating Blocking V DRM V RRM IDRM IRRM V DClink Repetitive peak off-state voltage Repetitive peak reverse voltage Repetitive peak off-state current Repetitive peak reverse current Permanent DC voltage for 100 FIT failure rate ≤ ≤ 2500 17 30 50 1400 V V mA mA V VD = VDRM VR = VRRM V GR ≥ 2V RGK = ∞ VGR ≥ 2V -40 ≤ Tj ≤ 125 °C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 19) Fm Mounting force A Acceleration: Device unclamped Device clamped M DS Da Weight Surface creepage distance Air strike distance ≥ ≥ 50 m/s2 200 m/s2 0.8 kg 22 mm 13 mm min. max. 17 kN 24 kN ABB Semiconductors AG reserves the right to change specifications without notice. 5SGA 25H2501 GTO Data On-state ITAVM ITRMS ITSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current It 2 830 A 1300 A 16 k A 32 kA 1.28⋅10 6 Half sine wave, TC = 85 °C tP tP tP tP IT IT = = = = = 1 0 ms 1 ms 1 0 ms 1 ms 2500 A Tj = 125°C After surge: VD = V R = 0 V Limiting load integral As 2 2 0.51⋅106 A s VT VT0 rT IH On-state voltage Threshold voltage Slope resistance Holding current 3.10 V 1.66 V 0.57 mΩ 50 A = 200 - 3000 3000 A Tj = 125 °C Tj = 25 °C Gate VGT IGT VGRM IGRM Gate trigger voltage Gate trigger current Repetitive peak reverse voltage Repetitive peak reverse current 1.0 2.5 17 50 V A V mA VG = VGRM VD RA = 24 V = 0.1 Ω Tj = 25 °C Turn-on switching di/dtcrit Max. rate of rise of on-state current td tr ton(min) Eon Delay time Rise time Min. on-time Turn-on energy per pulse 400 A/µs 700 A/µs 1.5 µs 3.5 µs 120 µs 0.85 Ws f = 200Hz f = 1Hz VD = IT = IT = 2500 A, Tj = 125 °C IGM = 30 A, diG/dt = 20 A/µs 0.5 VDRM Tj 2500 A 30 A 6 µF = 125 °C 200 A/µs 20 A/µs 5Ω di/dt = diG/dt = RS = IGM = CS = Turn-off switching ITGQM Max controllable turn-off current ts tf toff(min) Eoff IGQM Storage time Fall time Min. off-time Turn-off energy per pulse Peak turn-off gate current 24.0 µs 2.0 µs 80 µs 3.5 W s 700 A 2500 A VDM = V DRM CS VD Tj = 6 µF = ½ VDRM = diGQ/dt = LS VDM ≤ = 30 A/µs 0.3 µH V DRM 30 A/µs 125 °C diGQ/dt = ITGQ = ITGQM CS LS = ≤ 6 µF RS 0.3 µH = 5Ω ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 2 of 9 5SGA 25H2501 Thermal Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink Analytical function for transient thermal impedance: 30 K/kW 39 K/kW 17 K/kW 10 K/kW 5 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled -40...125°C Z thJC (t) = ∑ R (1 - e i 4 i 1 11.7 0.9 2 4.7 0.26 3 0.64 0.002 4 0.0001 0.001 - t /τ i ) RI (K/kW) τi (s) i =1 Fig. 1 Transient thermal impedance, junction to case. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 3 of 9 5SGA 25H2501 Fig. 2 On-state characteristics Fig. 3 Average on-state power dissipation vs. average on-state current. Fig. 4 Surge current and fusing integral vs. pulse width ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 4 of 9 5SGA 25H2501 Fig. 5 Forward blocking voltage vs. gate-cathode resistance. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 7 Forwarde gate current vs. forard gate voltage. Fig. 8 Gate trigger current vs. junction temperature ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 5 of 9 5SGA 25H2501 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 10 and 11: diG/dt CS RS Tj = 20 A/µs = 6 µF =5Ω = 125 °C Definition of Turn-on energy: 20 µs E on = ∫V 0 D ⋅ ITdt (t = 0, IG = 0.1 ⋅ IGM ) Common Test conditions for figures 12, 13 and 15: Definition of Turn-off energy: 40 µs E off = ∫V 0 D ⋅ ITdt ( t = 0, IT = 0.9 ⋅ I TGQ ) Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 6 of 9 5SGA 25H2501 Eoff [J] 5.0 5SGA 25H2501 QGQa [µC] 10000 9000 E off [J] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 500 1000 5SGA 25H2501 Conditions: 4.5 VD = 0.5⋅VDM 4.0 di GQ / dt = 30 A/ µs CS = 6 µF, RS = 5 Ω 3.5 Tj = 125°C 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 500 1000 1500 QGQa 8000 7000 6000 Conditions: V D = ½ VDM , V DM = V DRM CS = 3 µF di GQ /dt = 30 A/µ s RS = 5 Ω T j = 1 25°C CS = 4 µF CS = 6 µF VDM = VDRM 0.75 V DRM 0.5 V DRM 5000 4000 3000 2000 1000 0 2500 2000 1500 2000 2500 ITGQ [A] ITGQ [ A] Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current. Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. Eoff [J] ts [µs] 5 50 5SGA 25H2501 IGQM [A] 1000 4 40 800 I GQM 3 30 EOFF 600 2 20 tS Conditions: VD=½ VDM , VDM = VDRM ITGQ = 2500 A ,di GQ /dt = 30 A/µ s CS = 6 µ F, RS = 5 Ω , Tj = 125 °C 400 1 10 200 0 -10 0 0 10 20 2530 40 50 60 707580 0 90 100 110 120 125 Tj [°C] Fig. 14 Required snubber capacitor vs. max allowable turn-off current. ts [s] 50 40 30 20 10 0 0 10 20 30 40 50 60 IGQM [A] 5SGA 25H2501 Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature 1000 800 600 ts [s] 50 40 30 IGQM 20 10 0 0 500 1000 1500 2000 I GQM [A] 5SGA 25H2501 1000 800 600 400 200 IGQM tS Conditions: ITGQ = 2000 A Tj = 125 °C 400 200 0 di GQ/dt [A/ µ s] tS Conditions: diGQ/dt = 30 A/µ s Tj = 125 °C 0 2500 ITGQ [ A] Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. Fig. 17 Storage time and peak turn-off gate current vs. turn-off current ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 7 of 9 5SGA 25H2501 Fig. 18 General current and voltage waveforms with GTO-specific symbols Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1206-01 Jun. 04 page 8 of 9 5SGA 25H2501 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10… 15 V. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Tel: Fax: E-mail Internet +41 (0)62 888 6419 +41 (0)62 888 6306 info@ch.abb.com www.abbsem.com Doc. No. 5SYA1206-01 Jun. 04