5SGA30J4502

VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 24×103 2.2 0.6 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4502 Doc. No. 5SYA1202-03 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating Blocking Maximum rated values 1) Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate Characteristic values Symbol Conditions VDRM VRRM VDclink Ambient cosmic radiation at sea level in open air. VGR ≥ 2 V min typ max 4500 17 2800 Unit V V V Parameter Repetitive peak off-state current Repetitive peak reverse current Symbol Conditions IDRM IRRM VD = VDRM, VGR ≥ 2 V VR = VRRM, RGK = ∞ Ω min typ max 60 20 Unit mA mA Mechanical data Maximum rated values 1) Parameter Mounting force Characteristic values Symbol Conditions Fm Symbol Conditions Dp H m Ds Anode to Gate ± 0.1 mm ± 0.5 mm min 36 min typ 40 typ 75 26 1.3 max 44 max Unit kN Unit mm mm kg mm mm Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance 33 Air strike distance Da Anode to Gate 15 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SGA 30J4502 GTO Data On-state Maximum rated values 1) Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions ITAVM Half sine wave, TC = 85 °C min typ max 930 1460 Unit A A 3 Max. RMS on-state current ITRMS ITSM I2t ITSM I2t Symbol Conditions VT V(T0) rT IH 1) tp = 10 ms, Tvj = 125°C, sine wave After Surge: VD = VR = 0 V tp = 1 ms, Tvj = 125°C, sine wave After Surge: VD = VR = 0 V 24×10 A 6 2.88×10 40×10 3 A2s A A2s Unit V V mΩ A 800×10 min typ max 4 2.2 0.6 50 3 Parameter On-state voltage Threshold voltage Slope resistance Holding current IT = 3000 A, Tvj = 125°C Tvj = 125°C IT = 300...4000 A Tvj = 25°C Turn-on switching Maximum rated values Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Min. on-time Characteristic values Symbol Conditions diT/dtcr diT/dtcr ton Symbol Conditions td tr Eon VD = 0.5 VDRM, Tvj = 125 °C IT = 3000 A, di/dt = 200 A/µs, IGM = 30 A, diG/dt = 20 A/µs, CS = 6 µF, RS = 5 Ω Tvj = 125°C, IT = 3000 A, IGM = 30 A, diG/dt = 20 A/µs f = 200 Hz f = 1 Hz min typ max 400 800 Unit A/µs A/µs µs 100 min typ max 3 6 3.6 Parameter Turn-on delay time Rise time Turn-on energy per pulse Unit µs µs J Turn-off switching Maximum rated values 1) Parameter Max. controllable turn-off current Min. off-time Characteristic values Symbol Conditions ITGQM toff Symbol Conditions tS tf Eoff IGQM VD = 0.5 VDRM, Tvj = 125 °C VDM ≤ VDRM, diGQ/dt = 40 A/µs, ITGQ = ITGQM, RS = 5Ω, CS = 6 µF, LS = 0.3 µH VDM ≤ VDRM, diGQ/dt = 40 A/µs, CS = 6 µF, LS ≤ 0.3 µH min typ max 3000 Unit A µs 80 min typ max 25 3 13 900 Parameter Storage time Fall time Turn-on energy per pulse Peak turn-off gate current Unit µs µs J A ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 2 of 9 5SGA 30J4502 Gate Maximum rated values 1) Parameter Repetetive peak reverse voltage Repetetive peak reverse current Characteristic values Symbol Conditions VGRM IGRM VGR = VGRM min typ max 17 20 Unit V mA Parameter Gate trigger voltage Gate trigger current Symbol Conditions VGT IGT 1) min typ 1 3 max Unit V A Tvj = 25°C, VD = 24 V, RA = 0.1 Ω Thermal Maximum rated values Parameter Junction operating temperature Storage temperature range Characteristic values Symbol Tvj Tstg Symbol Rth(jc) Rth(jc)A Rth(jc)C Conditions min -40 -40 typ max 125 125 Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW Parameter Thermal resistance junction to case Conditions Double side cooled Anode side cooled Cathode side cooled Single side cooled Double side cooled min typ max 12 22 27 6 3 Thermal resistance case to heatsink (Double side cooled) Rth(ch) Rth(ch) Analytical function for transient thermal impedance: ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i Ri(K/kW) τi(s) 1 5.400 1.2000 2 4.500 0.1700 3 1.700 0.0100 4 0.400 0.0010 Fig. 1 Transient thermal impedance, junction to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 3 of 9 5SGA 30J4502 IT [A] 3000 PAV [kW] 5.00 125°C 25°C 2500 4.50 4.00 3.50 2000 3.00 DC 180° Rect. 180° Sine 120° Rect. 60° Rect. 1500 2.50 2.00 1000 1.50 1.00 500 0.50 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VT [V] 0.00 0 250 500 750 1000 1250 1500 ITAV [V] Fig. 2 On-state characteristics. Fig. 3 Average on-state power dissipation vs. average on-state current.. 2 2 ò i dt [A s] ITSM [kA] 100.00 1.E+07 Itsm ò I td 10.00 Conditions: Before surge: T j = 125°C After surge: V D = 0V 2 1.E+06 1.00 0 1 10 1.E+05 tp [ms] 100 Fig. 4 Surge current and fusing integral vs. pulse width. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 4 of 9 5SGA 30J4502 Fig. 5 Forward blocking voltage vs. gate-cathode resistance.. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 7 Forward gate current vs. forard gate voltage. Fig. 8 Gate trigger current vs. junction temperature ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 5 of 9 5SGA 30J4502 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 10 and 11: diG/dt CS RS Tj = 20 A/µs = 6 µF =5Ω = 125 °C Definition of Turn-on energy: 20 µ s E on = òV 0 D ⋅ ITdt (t = 0, IG = 0.1 ⋅ IGM ) Common Test conditions for figures 12, 13 and 15: Definition of Turn-off energy: 40 µ s E off = òV 0 D ⋅ ITdt ( t = 0, IT = 0.9 ⋅ ITGQ ) Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 6 of 9 5SGA 30J4502 Eoff [J] 18 16 14 12 10 8 6 4 2 0 0 500 1000 1500 2000 2500 ¾ VDRM ½ VDRM Conditions: VD = ½ ⋅VDRM di GQ/dt = 40 A/ µ s CS = 6 µ F, R S = 5 Ω Tj = 125°C Q GQa [A] 10000 9000 Eoff [J] 14 C S = 4µ F 12 CS = 3µ F 10 8 6 4 2 0 0 500 1000 1500 2000 2500 3000 ITGQ [A] Conditions: diGQ /dt =40 A/µs T j = 125 °C QGQa 8000 7000 C S = 6µ F VDM=VDRM 6000 5000 4000 3000 2000 1000 0 3000 ITGQ [A] Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current. C s [µ F] 6 Condition: VD = ½ ⋅VDRM , VDM = VDRM diGQ /dt = 40 A/µs RS = 5 Ω , LS ≤ 300 nH Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. Eoff [J] ts [µ s] 30 50 IGQM [A] 1000 IGQM 24 40 800 5 4 18 30 600 3 tS 12 20 Eoff 400 2 6 10 Condition: di Q /dt = 40 A/µs G Tj = 125 °C 200 1 1000 1500 2000 2500 3000 IGQM [A] 0 0 -10 0 10 202530 40 50 60 707580 0 90 100 110 120 125 Tj [°C] Fig. 14 Required snubber capacitor vs. max allowable turn-off current. IGQM [A] Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature. ts [s] 50 45 40 35 30 25 20 15 10 5 0 0 500 1000 1500 2000 2500 tS Conditions: diGQ/dt =40 A/µ s T j = 125 °C IGQM [A] ts [s] 50 45 40 35 30 25 20 15 10 5 0 0 10 20 30 40 50 Conditions: ITGQ = 3000 A T j = 125 °C 1000 IGQM 900 800 700 600 1000 800 600 tS 500 400 300 200 100 0 60 diGQ /dt [A/µs] IGQM 400 200 0 3000 ITGQ [A] Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. Fig. 17 Storage time and peak turn-off gate current vs. turn-off current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 7 of 9 5SGA 30J4502 Fig. 18 General current and voltage waveforms with GTO-specific symbols. Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 8 of 9 5SGA 30J4502 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10… 15 V. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1202-03 Jan. 03