VDRM ITGQM ITSM VT0 rT VDclink
= = = = = =
4500 3000 25×103 1.9 0.53 2200
V A A V mΩ V
Asymmetric Gate turn-off Thyristor
5SGA 30J4505
Doc. No. 5SYA1204-04 Sept. 05
• Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate
Characteristic values
Symbol Conditions VDRM VRRM VDC-link Ambient cosmic radiation at sea level in open air. VGR ≥ 2 V
min
typ
max 4500 17 2200
Unit V V V
Parameter Repetitive peak off-state current Repetitive peak reverse current
Symbol Conditions IDRM IRRM VD = VDRM, VGR ≥ 2 V VR = VRRM, RGK = ∞ Ω
min
typ
max 60 20
Unit mA mA
Mechanical data
Maximum rated values
1)
Parameter Mounting force
Characteristic values
Symbol Conditions Fm Symbol Conditions Dp H m Ds Da Anode to Gate Anode to Gate ± 0.1 mm
min 36 min 25.6 33 15
typ 40 typ 75
max 44 max 26.0 1.3
Unit kN Unit mm mm kg mm mm
Parameter Pole-piece diameter Housing thickness W eight Surface creepage distance Air strike distance
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
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5SGA 30J4505
GTO Data
On-state
Maximum rated values
1)
Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Characteristic values
Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t Symbol Conditions VT V(T0) rT IH
1)
min
typ
max 1000 1570
Unit A A
3
Half sine wave, TC = 85 °C
tp = ms, Tvj = 125°C, sine wave After Surge: VD = VR = 0 V tp = ms, Tvj = 125°C, sine wave After Surge: VD = VR = 0 V
25×10
A A2s A
6
3.1×10 45×10
6
3
1.01×10 min typ max 3.5 1.9 0.53 50
A2s Unit V V mΩ A
Parameter On-state voltage Threshold voltage Slope resistance Holding current
IT = 3000 A, Tvj = 125°C Tvj = 125°C IT = 500...4000 A Tvj = 25°C
Turn-on switching
Maximum rated values
Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Min. on-time
Symbol Conditions diT/dtcr diT/dtcr ton Tvj = 125°C, IT = 3000 A, IGM = 30 A, diG/dt = 20 A/µs f = 200 Hz f = 1 Hz
min
typ
max 400 800
Unit A/µs A/µs µs
VD = 0.5 VDRM, Tvj = 125 °C IT = 3000 A, di/dt = 200 A/µs, IGM = 30 A, diG/dt = 20 A/µs, CS = 6 µF, RS = 5 Ω
100
Characteristic values
Parameter Turn-on delay time Rise time Turn-on energy per pulse
Symbol Conditions td tr Eon VD = 0.5 VDRM, Tvj = 125 °C IT = 3000 A, di/dt = 200 A/µs, IGM = 30 A, diG/dt = 20 A/µs, CS = 6 µF, RS = 5 Ω
min
typ
max 3 6 3
Unit µs µs J
Turn-off switching
Maximum rated values
1)
Parameter Max. controllable turn-off current Min. off-time
Symbol Conditions ITGQM toff VDM ≤ VDRM, diGQ/dt = 40 A/µs, CS = 6 µF, LS ≤ 0.3 µH VD = 0.5 VDRM, Tvj = 125 °C VDM ≤ VDRM, diGQ/dt = 40 A/µs, ITGQ = ITGQM, RS = 5 Ω, CS = 6 µF, LS = 0.3 µH
min
typ
max 3000
Unit A µs
100
Characteristic values
Parameter Storage time Fall time Turn-on energy per pulse Peak turn-off gate current
Symbol Conditions tS tf Eoff IGQM VD = 0.5 VDRM, Tvj = 125 °C VDM ≤ VDRM, diGQ/dt = 40 A/µs, ITGQ = ITGQM, RS = 5 Ω, CS = 6 µF, LS = 0.3 µH
min
typ
max 25 3 11 900
Unit µs µs J A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1204-04 Sept. 05 page 2 of 10
5SGA 30J4505
Gate
Maximum rated values
1)
Parameter Repetitive peak reverse voltage Repetitive peak reverse current
Characteristic values
Symbol Conditions VGRM IGRM VGR = VGRM
min
typ
max 17 20
Unit V mA
Parameter Gate trigger voltage Gate trigger current
Symbol Conditions VGT IGT
1)
min
typ 1 3
max
Unit V A
Tvj = 25°C, VD = 24 V, RA = 0.1 Ω
Thermal
Maximum rated values
Parameter Junction operating temperature Storage temperature range
Characteristic values
Symbol Tvj Tstg Symbol Rth(j-c) Rth(j-c)A Rth(j-c)C
Conditions
min 0 0
typ
max 125 125
Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW
Parameter Thermal resistance junction to case
Conditions Double side cooled Anode side cooled Cathode side cooled Single side cooled Double side cooled
min
typ
max 12 22 27 6 3
Thermal resistance case to heatsink (Double side cooled)
Rth(c-h) Rth(c-h)
Analytical function for transient thermal impedance:
Zth(j - c)(t) = ∑ Ri(1 - e - t/τ i )
i =1
2 4.500 0.1700 i Ri(K/kW) τi(s) 1 5.400 1.2000 3 1.700 0.0100 4 0.400 0.0010 Fig. 1 Transient thermal impedance, junction to case
n
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Doc. No. 5SYA1204-04 Sept. 05 page 3 of 10
5SGA 30J4505
Fig. 2 On-state characteristics
Fig. 3 Average on-state power dissipation vs. average on-state current
Fig. 4 Surge current and fusing integral vs. pulse width
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Doc. No. 5SYA1204-04 Sept. 05 page 4 of 10
5SGA 30J4505
Fig. 5 Forward blocking voltage vs. gate-cathode resistance
Fig. 6 Static dv/dt capability; forward blocking voltage vs. neg. gate voltage or gate cathode resistance
Fig. 7 Forward gate current vs. forward gate voltage
Fig. 8 Gate trigger current vs. junction temperature
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Doc. No. 5SYA1204-04 Sept. 05 page 5 of 10
5SGA 30J4505
Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage
Fig. 10 Turn-on energy per pulse vs. on-state current and current rise rate
Common Test conditions: diG/dt CS RS Tj = 20 A/µs = 6 µF =5Ω = 125 °C
Definition of Turn-on energy:
20 µ s
E on =
∫V
0
D
⋅ ITdt
(t = 0, IG = 0.1 ⋅ IGM )
Definition of Turn-off energy:
E off =
40 µ s
∫V
0
D
⋅ ITdt
( t = 0, IT = 0.9 ⋅ ITGQ )
Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage
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Doc. No. 5SYA1204-04 Sept. 05 page 6 of 10
5SGA 30J4505
Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage, extracted gate charge vs. turn-off current
Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance
Fig. 14 Required snubber capacitor vs. max allowable turn-off current
Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature
IGQM [A] 1000 ts [µs] 50 IGQM [A] 1000
ts [µs] 50
tS
40
IGQM
800
40
800
30
600
30
600
20
400
20
IGQM
400
tS
10
ITGQ = 3000 A Tj = 125 °C
200
10
diGQ/dt =40 A/µs Tj = 125 °C
200
0 0 10 20 30 40
0 50 60 diGQ/dt [A/µs]
0 0 500 1000 1500 2000 2500
0 3000 ITGQ [A]
Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate
Fig. 17 Storage time and peak turn-off gate current vs. turn-off current
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5SGA 30J4505
Fig. 18 General current and voltage waveforms with GTO-specific symbols
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5SGA 30J4505
Fig. 19 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
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Doc. No. 5SYA1204-04 Sept. 05 page 9 of 10
5SGA 30J4505 Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10… 15 V.
Related documents:
5SYA 2036 5SYA 2046 5SZK 9104 5SZK 9105 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Cosmic Ray Specification of enviromental class for pressure contact GTO, STORAGE available on request, please contact factory Specification of enviromental class for pressure contact GTO, TRANSPORTATION available on request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1204-04 Sept. 05