VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
4500 2200 17×103 1.8 0.533 2800
V A A V mΩ V
Reverse Conducting Integrated Gate-Commutated Thyristor
5SHX 26L4510
Doc. No. 5SYA1230-03 Aug 07
• High snubberless turn-off rating • Optimized for medium frequency ( 0.5 m/s) strong air cooling allows for increased ambient temperature
Fig. 2 Max. turn-off current vs. frequency for lifetime operation
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07 page 5 of 13
5SHX 26L4510
GCT Part
Max. on-state characteristic model: Max. on-state characteristic model:
VT25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT
A25 -3 -79.1×10 Valid for iT = 300 – 15000 A B25 C25 -6 -3 272.3×10 296.9×10 D25 0.0
VT125 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT
Valid for iT = 300 – 15000 A A125 -3 -342.7×10 B125 -6 414.9×10 C125 -3 312.7×10 D125 0.0
Fig. 3 GCT on-state voltage characteristics
Fig. 4 GCT on-state voltage characteristics
Fig. 5 GCT surge on-state current vs. pulse length, half-sine wave
Fig. 6 GCT surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz
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Doc. No. 5SYA1230-03 Aug 07 page 6 of 13
5SHX 26L4510
Fig. 7 GCT turn-off energy per pulse vs. turn-off current
Fig. 8 GCT Safe Operating Area
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07 page 7 of 13
5SHX 26L4510
Diode Part
Max. on-state characteristic model: Max. on-state characteristic model:
VF25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT
A25 -3 -463.7×10 Valid for IF = 300 – 15000 A B25 C25 -6 -3 867.9×10 495.5×10 D25 0.0
VF125 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT
Valid for IT = 300 – 15000 A A125 -1.2 B125 -3 1.0×10 C125 -3 555.4×10 D125 0.0
Fig. 9 Diode on-state voltage characteristics
Fig. 10 Diode on-state voltage characteristics
Fig. 11 Diode surge on-state current vs. pulse length, half-sine wave
Fig. 12 Diode surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz
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Doc. No. 5SYA1230-03 Aug 07 page 8 of 13
5SHX 26L4510
Fig. 13 Upper scatter range of diode turn-off energy per pulse vs. turn-off current
Fig. 14 Upper scatter range of diode turn-off energy per pulse vs decay rate of on-state current
Fig. 15 Upper scatter range of diode reverse recovery charge vs decay rate of on-state current
Fig. 16 Upper scatter range of diode reverse recovery current vs decay rate of on-state current
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Doc. No. 5SYA1230-03 Aug 07 page 9 of 13
5SHX 26L4510
Fig. 17 Diode Safe Operating Area
Fig. 18 Max. Gate Unit input power in chopper mode
Fig. 19 Burst capability of Gate Unit
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Doc. No. 5SYA1230-03 Aug 07 page 10 of 13
5SHX 26L4510
Fig. 20 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
1) VGIN (AC or DC+) 2) VGIN (AC or DC+) 3) Cathode 4) VGIN (AC or DC-) 5) VGIN (AC or DC-) Fig. 21 Detail A: pin out of supply connector X1.
RC-IGCT Gate Unit
Supply (VGIN)
RC-GCT
Anode
Internal Supply (No galvanic isolation to power circuit)
X1
LED1 LED2 LED3 LED4
TurnOn Circuit Rx Logic Monitoring
Gate
CS SF
Command Signal (Light)
Status Feedback (Light)
Tx
TurnOff Circuit
Cathode
Fig. 22 Block diagram
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Doc. No. 5SYA1230-03 Aug 07 page 11 of 13
5SHX 26L4510
Turn-on
dIT/dt ITM VD 0.9 VD
External Retrigger pulse
VDSP IT
Turn-off
VDM VD
IT
0.4 ITGQ 0.1 VD VD
CS
CS
CS
SF tdon SF tdon tr
SF tretrig
SF tdoff SF tdoff
ton
toff
Fig. 23 General current and voltage waveforms with IGCT-specific symbols
VF(t), IF (t) dIF/dt VFR IF (t) -dIF/dt IF (t)
Qrr VF (t) tfr tfr (typ) 10 µs IRM VR (t) VF (t) t
Fig. 24 General current and voltage waveforms with Diode-specific symbols
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1230-03 Aug 07 page 12 of 13
5SHX 26L4510
Li LCL
Rs
DCL
DUT
GCT - part
VDC
CCL DUT
Diode - part
LLoad
Fig. 25 Test circuit
Related documents:
5SYA 2031 5SYA 2032 5SYA 2036 5SYA 2046 5SYA 2048 5SYA 2051 5SZK 9107 Applying IGCT Gate Units Applying IGCTs Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Failure rates of IGCTs due to cosmic rays Field measurements on High Power Press Pack Semiconductors Voltage ratings of high power semiconductors Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1230-03 Aug 07
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