5SHY35L4512

VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 4000 35×103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 June 07 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency ( 0.5 m/s) strong air cooling allows for increased ambient temperature Fig. 2 Max. turn-off current vs. frequency for lifetime operation ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1233-02 June 07 page 4 of 9 5SHY 35L4512 Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT A25 -3 663.9×10 Valid for iT = 300 – 30000 A B25 C25 -6 -3 123.2×10 79.71×10 D25 0.0 VT125 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT Valid for iT = 300 – 30000 A A125 -3 178.0×10 B125 -6 159.8×10 C125 -3 142.7×10 D125 0.0 Fig. 3 GCT on-state voltage characteristics Fig. 4 GCT on-state voltage characteristics Fig. 5 Surge on-state current vs. pulse length, halfsine wave Fig. 6 Surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1233-02 June 07 page 5 of 9 5SHY 35L4512 Fig. 7 GCT turn-off energy per pulse vs. turn-off current Fig. 8 Safe Operating Area Fig. 9 Max. Gate Unit input power in chopper mode Fig. 10 Burst capability of Gate Unit ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1233-02 June 07 page 6 of 9 5SHY 35L4512 Fig. 11 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise 1) VGIN (AC or DC+) 2) VGIN (AC or DC+) 3) Cathode 4) VGIN (AC or DC-) 5) VGIN (AC or DC-) Fig. 12 Detail A: pin out of supply connector X1 AS-IGCT Gate Unit Supply (VGIN) AS-GCT X1 Internal Supply (No galvanic isolation to power circuit) Anode LED1 LED2 LED3 LED4 TurnOn Circuit Rx Logic Monitoring Gate CS SF Command Signal (Light) Status Feedback (Light) Tx TurnOff Circuit Cathode Fig. 13 Block diagram ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1233-02 June 07 page 7 of 9 5SHY 35L4512 Turn-on dIT/dt ITM VD 0.9 VD External Retrigger pulse VDSP IT Turn-off VDM VD IT 0.4 ITGQ 0.1 VD VD CS CS CS SF tdon SF tdon tr SF tretrig SF tdoff SF tdoff ton toff Fig. 14 General current and voltage waveforms with IGCT - specific symbols Li LCL LD Rs DUT VDC CCL LLoad Fig. 15 Test circuit ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1233-02 June 07 page 8 of 9 5SHY 35L4512 Related documents: 5SYA 2031 5SYA 2032 5SYA 2036 5SYA 2046 5SYA 2048 5SYA 2051 5SZK 9107 Applying IGCT Gate Units Applying IGCTs Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Failure rates of IGCTs due to cosmic rays Field measurements on High Power Press Pack Semiconductors Voltage ratings of high power semiconductors Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1233-02 June 07