5SMX12K1273

VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1273 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1633-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C min max 1200 75 150 Unit V A A V µs °C -20 20 10 -40 150 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12K1273 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 600 V, IC = 75 A, RG = 10 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load VCC = 600 V, IC = 75 A, RG = 15 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load VCC = 600 V, IC = 75 A, VGE = ±15 V, RG = 10 Ω, Lσ = 60 nH, inductive load, FWD: 5SLX12F1200 VCC = 600 V, IC = 75 A, VGE = ±15 V, RG = 15 Ω, Lσ = 60 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 75 A, VGE = 15 V VCE = 1200 V, VGE = 0 V Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C min 1200 1.7 typ max Unit V 1.9 2.1 2.3 100 V V µA µA nA V nC nF Ω ns ns ns ns 300 -200 4.5 710 6.92 0.46 0.29 5 170 195 60 65 415 470 45 70 6.3 200 6.5 VCE = 0 V, VGE = ±20 V, Tvj = 125 °C IC = 3 mA, VCE = VGE, Tvj = 25 °C IC = 75 A, VCE = 600 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C Turn-on switching energy Eon mJ 9.2 4.9 mJ 7.8 420 A Turn-off switching energy Eoff Short circuit current 2) ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 900 V, VCEM ≤ 1200 V Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1633-00 June 05 page 2 of 5 5SMX 12K1273 Mechanical properties Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization 3) 3) Unit 11.0 x 11.0 9.5 x 9.5 1.2 x 1.2 130 ± 20 AlSi1 Al / Ti / Ni / Ag 4 1.8 mm mm mm µm µm µm LxW front (E) back (C) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing G Emitter Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1633-00 June 05 page 3 of 5 5SMX 12K1273 150 150 VCE = 20 V 125 25 °C 100 125 °C 125 100 IC [A] 75 IC [A] 75 50 50 125 °C 25 °C 25 VGE = 15 V 0 0 1 2 VCE [V] 3 4 5 25 0 0 1 2 3 4 5 6 7 8 9 10 11 12 VGE [V] Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics 0.06 VCC = 600 V RGon = 10 ohm RGoff = 15 ohm VGE = ±15 V Tvj = 125 °C Lσ = 60 nH Eon, E off [J] 0.040 0.035 0.030 0.025 VCC = 600 V IC = 75 A VGE = ±15 V Tvj = 125 °C Lσ = 60 nH Eon 0.05 0.04 Eon, E off [J] 0.03 Eon 0.020 0.015 0.02 Eoff 0.01 0.005 0 0 50 100 IC [A] 150 200 250 0.000 0 20 40 60 80 100 RG [ohm] 0.010 Eoff Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1633-00 June 05 page 4 of 5 5SMX 12K1273 20 10 Cies VCC = 600 V 15 VCC = 800 V VGE [V] VGE = 0 V fOSC = 1 MHz VOSC = 50 mV 10 C [n F] 1 Coes 5 Cres IC = 75 A Tvj = 25 °C 0 0.0 0.1 0.2 0.3 0.4 Qg [µC] 0.5 0.6 0.7 0.1 0 5 10 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1633-00 June 05