5SMX12K1701

9&( ,&  9  $ ,*%7'LH 60; . 'LH VL]H  [  PP Doc. No. 5SYA1619-01 July 03 • /RZ ORVV WKLQ ,*%7 GLH • +LJKO\ UXJJHG 637 GHVLJQ • /DUJH IURQW ERQGDEOH DUHD 0D[LPXP UDWHG YDOXHV  3DUDPHWHU Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 6\PERO &RQGLWLRQV VCES IC ICM VGES tpsc Tvj VCC = 1300 V, VCEM ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C -40 Limited by Tvjmax -20 VGE = 0 V, Tvj ≥ 25 °C PLQ PD[ 1700 75 150 20 10 150 8QLW V A A V µs °C 1) Maximum rated values indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH 60; . ,*%7 FKDUDFWHULVWLF YDOXHV 3DUDPHWHU Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 6\PERO &RQGLWLRQV V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 900 V, IC = 75 A, RG = 15 Ω, VGE = ±15 V, Lσ = 160 nH, inductive load VCC = 900 V, IC = 75 A, RG = 15 Ω, VGE = ±15 V, Lσ = 160 nH, inductive load VCC = 900 V, IC = 75 A, VGE = ±15 V, RG = 15 Ω, Lσ = 160 nH, inductive load, FWD: 5SLX12G1700 VCC = 900 V, IC = 75 A, VGE = ±15 V, RG = 15 Ω, Lσ = 160 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 75 A, VGE = 15 V VCE = 1700 V, VGE = 0 V Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C -500 4.5 630 6.9 0.48 0.29 5 170 180 100 110 420 500 90 110 18 mJ 25 12 mJ 19 350 A Ω ns ns ns ns nF 800 500 6.5 PLQ 1700 2.1 2.3 2.6 100 2.7 W\S PD[ 8QLW V V V µA µA nA V nC VCE = 0 V, VGE = ±20 V, Tvj = 125 °C IC = 3 mA, VCE = VGE, Tvj = 25 °C IC = 75 A, VCE = 900 V, VGE = -15 ..15 V Turn-on switching energy Eon Turn-off switching energy Eoff Short circuit current ISC tpsc ”  V 9GE = 15 V, Tvj = 125 °C, VCC = 1300 V, VCEM ”  9 $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No. 5SYA1619-01 July 03 page 2 of 5 60; . 0HFKDQLFDO SURSHUWLHV 3DUDPHWHU Overall die L W x 8QLW 11.9 11.9 x mm mm mm µm µm µm Dimensions exposed L x W (except gate pad) front metal gate pad thickness front back LxW 9.9 x 9.9 1.2 x 1.2 210 ± 15 Metallization 1) AISi1 AI / Ti / Ni / Ag 4 1.2 1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02. 2XWOLQH GUDZLQJ G Emitter 1RWH DOO GLPHQVLRQV DUH VKRZQ LQ PP 7KLV LV DQ HOHFWURVWDWLF VHQVLWLYH GHYLFH SOHDVH REVHUYH WKH LQWHUQDWLRQDO VWDQGDUG ,(&  &KDS ,; $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No. 5SYA1619-01 July 03 page 3 of 5 60; . 150 25 °C 125 125 °C 100 150 VCE = 25 V 125 100 IC [A] IC [A] 75 75 50 50 125 °C 25 °C 25 VGE = 15 V 0 0 1 2 VCE [V] 3 4 5 25 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] )LJ  Typical onstate characteristics )LJ  Typical transfer characteristics 0.080 0.070 0.060 0.050 Eon, Eoff [J] Eon, Eoff [J] 0.040 0.030 0.020 0.010 0.000 0 25 50 75 Ic [A] 100 125 150 Eon VCC = 900 V RG = 15 ohm VGE = ±15 V Tvj = 125 °C Lσ = 160 nH 0.050 0.045 0.040 0.035 Eon 0.030 0.025 0.020 0.015 Eoff 0.010 0.005 0.000 0 10 20 30 40 50 RG [ohm] Eoff VCC = 900 V IC = 75 A VGE = ±15 V Tvj = 125 °C Lσ = 160 nH )LJ  Typical switching characteristics vs collector current )LJ  Typical switching characteristics vs gate resistor $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No. 5SYA1619-01 July 03 page 4 of 5 60; . 20 10 Cies VCC = 900 V 15 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV C [nF] 1 VCC = 1300 VGE [V] 10 Coes 5 IC = 75 A Tvj = 25 °C 0 0.0 0.1 0.2 0.3 Qg [µC] 0.4 0.5 0.6 0.1 0 5 Cres 10 15 20 VCE [V] 25 30 35 )LJ  Typical gate charge characteristics )LJ  Typical capacitances vs collector-emitter voltage This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1619-01 July 03