5SMX12L2510

VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1622-03 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 2000 V, VCEM ≤ 2500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max 2500 50 100 Unit V A A V µs °C -20 20 10 -40 125 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12L2510 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 1250 V, IC = 50 A, RG = 33 Ω, VGE = ±15 V, Lσ = 2400 nH, inductive load VCC = 1250 V, IC = 50 A, RG = 33 Ω, VGE = ±15 V, Lσ = 2400 nH, inductive load VCC = 1250 V, IC = 50 A, VGE = ±15 V, RG = 33 Ω, Lσ = 2400 nH, inductive load, FWD: ½ 5SLX12L2510 VCC = 1250 V, IC = 50 A, VGE = ±15 V, RG = 33 Ω, Lσ = 2400 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 50 A, VGE = 15 V VCE = 2500 V, VGE = 0 V Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C min 2500 2.0 typ max Unit V 2.5 3.1 2.9 100 V V µA µA nA V nC nF Ω ns ns ns ns 1000 -500 5 510 7.8 0.4 0.13 5 380 390 255 265 690 790 320 350 28 500 7.5 VCE = 0 V, VGE = ±20 V, Tvj = 125 °C IC = 10 mA, VCE = VGE, Tvj = 25 °C IC = 50 A, VCE = 1250 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C Turn-on switching energy Eon mJ 42 40 mJ 50 250 A Turn-off switching energy Eoff Short circuit current 2) ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 2000 V, VCEM ≤ 2500 V Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1622-03 Sep 05 page 2 of 5 5SMX 12L2510 Mechanical properties Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization 3) 3) Unit 12.4 x 12.4 10.11 x 10.13 1.46 x 1.61 305 ± 20 AlSi1 AlSi1 + TiNiAg 4 1.8 + 1.2 mm mm mm µm µm µm LxW front (E) back (C) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing G Emitter Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1622-03 Sep 05 page 3 of 5 5SMX 12L2510 100 90 80 125 °C 70 60 IC [A] 50 40 30 20 10 VGE = 15 V 0 0 1 2 VCE [V] 3 4 5 IC [A] 25 °C 100 VCE = 25 V 90 80 70 60 50 40 125 °C 30 25 °C 20 10 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics 0.20 0.18 0.16 0.14 Eon, Eoff [J] Eon, Eoff [J] 0.12 Eoff 0.10 0.08 0.06 0.04 0.02 0.00 0 25 50 75 IC [A] 100 125 150 VCC = 1250 V RG = 33 ohm VGE = ±15 V Tvj = 125 °C Lσ = 2.4 µH 0.10 0.09 Eon 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 20 40 60 80 100 120 140 RG [ohm] Eoff VCC = 1250 V IC = 50 A VGE = ±15 V Tvj = 125 °C Lσ = 2.4 µH Eon Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1622-03 Sep 05 page 4 of 5 5SMX 12L2510 20 10 Cies VCC = 1250 V 15 VCC = 1800 V VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VGE [V] 10 C [nF] 1 Coes 5 Cres IC = 50 A Tvj = 25 °C 0 0.0 0.1 0.2 0.3 Qg [µC] 0.4 0.5 0.1 0 5 10 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1622-03 Sep 05