5SMX12L2511

VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2511 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1640-00 Mar 07 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 2000 V, VCEM ≤ 2500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max 2500 54 108 Unit V A A V µs °C -20 20 10 -40 125 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12L2511 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 1250 V, IC = 54 A, RG = 33 Ω, VGE = ±15 V, Lσ = 2400 nH, inductive load VCC = 1250 V, IC = 54 A, RG = 33 Ω, VGE = ±15 V, Lσ = 2400 nH, inductive load VCC = 1250 V, IC = 54 A, VGE = ±15 V, RG = 33 Ω, Lσ = 2400 nH, inductive load, FWD: ½ 5SLX12L2507 VCC = 1250 V, IC = 54 A, VGE = ±15 V, RG = 33 Ω, Lσ = 2400 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 54 A, VGE = 15 V VCE = 2500 V, VGE = 0 V Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C min 2500 typ max Unit V 2.2 2.7 100 1000 -500 5 480 6.7 0.43 0.14 5 350 350 280 280 810 910 370 430 36 500 7.5 V V µA µA nA V nC nF Ω ns ns ns ns VCE = 0 V, VGE = ±20 V, Tvj = 125 °C IC = 10 mA, VCE = VGE, Tvj = 25 °C IC = 54 A, VCE = 1250 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C Turn-on switching energy Eon mJ 48 68 mJ 85 250 A Turn-off switching energy Eoff Short circuit current 2) ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 2000 V, VCEM ≤ 2500 V Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1640-00 Mar 07 page 2 of 5 5SMX 12L2511 Mechanical properties Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization 3) 3) Unit 12.4 x 12.4 9.0 x 9.0 1.46 x 1.61 310 ± 20 AlSi1 + TiNiAg AlSi1 + TiNiAg 4+4 1.8 + 1.2 mm mm mm µm µm µm LxW front (E) back (C) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing 12.38 ±0.05 10.67 9.00 -+0.04 0 Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1640-00 Mar 07 page 3 of 5 1.61±0.05 1.90-+0.04 0 5SMX 12L2511 162 162 VCE = 2 0 V 135 25 °C 108 125 °C IC [ A ] 81 IC [ A ] 135 108 81 54 54 125 °C 27 VGE = 15 V 0 0 1 2 3 4 5 6 7 VCE [ V] 27 25 °C 0 0 2 4 6 8 VGE [ V] 10 12 14 16 Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics 300 VCC = 1250 V RG = 33 ohm VGE = ± 15 V Tvj = 125 °C Lσ = 2 .4 µH E on 120 250 100 E off E off E on , E o ff [m J ] 80 200 E o n , E o ff [ m J ] 150 60 100 40 E on VCC = 1 250 V IC = 5 4 A VGE = ± 15 V Tvj = 125 °C Lσ = 2 .4 µH 0 20 40 60 80 100 120 140 50 E sw [ mJ] = 0.94 x 10 -2 x I C2 + 1 .36 x I C + 9 .77 20 0 0 27 54 81 IC [A] 108 135 162 0 R G [ohm] Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1640-00 Mar 07 page 4 of 5 5SMX 12L2511 20 10 C ies VCC = 1 250 V 15 VCC = 1800 V V GE [ V ] C [ nF ] 10 1 C oes 5 VGE = 0 V f osc = 1 MHz Vosc = 5 0 mV 0 .1 0.10 0.20 0.30 Q g [ µC] 0.40 0.50 0 5 C res IC = 5 4 A Tvj = 2 5 °C 0 0.00 10 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1640-00 Mar 07