VCE IC
= =
1200 V 150 A
IGBT-Die
5SMX 12M1273
Die size: 13.6 x 13.6 mm
Doc. No. 5SYA1637-00 July 06
• Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area
Maximum rated values
Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature
1)
1)
Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C
min
max 1200 150 300
Unit V A A V µs °C
-20
20 10
-40
150
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SMX 12M1273
IGBT characteristic values
Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time
2)
Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 600 V, IC = 150 A, RG = 8.2 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load VCC = 600 V, IC = 150 A, RG = 8.2 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load VCC = 600 V, IC = 150 A, VGE = ±15 V, RG = 8.2 Ω, Lσ = 60 nH, inductive load, FWD: 3x 5SLX 12E1200 VCC = 600 V, IC = 150 A, VGE = ±15 V, RG = 8.2 Ω, Lσ = 60 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 150 A, VGE = 15 V VCE = 1200 V, VGE = 0 V Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C
min 1200 1.9
typ
max
Unit V
2.15 2.4
2.4 100
V V µA µA nA V nC nF Ω ns ns ns ns
500 -200 4.5 1110 10.9 0.72 0.46 3 170 200 75 85 410 510 50 60 14 200 6.5
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C IC = 6 mA, VCE = VGE, Tvj = 25 °C IC = 150 A, VCE = 600 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C
Turn-on switching energy
Eon
mJ 21 10 mJ 15 620 A
Turn-off switching energy
Eoff
Short circuit current
2)
ISC
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 900 V, VCEM ≤ 1200 V
Characteristic values according to IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1637-00 July 06 page 2 of 5
5SMX 12M1273
Mechanical properties
Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization
3) 3)
Unit 13.6 x 13.6 12.0 x 12.0 1.19 x 1.19 130 ± 20 AlSi1 Al / Ti / Ni / Ag 4 1.8 mm mm mm µm µm µm
LxW
front (E) back (C)
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline drawing
G
Emitter
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1637-00 July 06 page 3 of 5
5SMX 12M1273
300
300 VCE = 20 V
250 25 °C 125 °C 200
250
200
IC [A]
IC [A]
150
150
100
100 125 °C 50
VGE = 15 V
50
25 °C
0 0 1 2 VCE [V] 3 4
0 0 1 2 3 4 5 6 VGE [V] 7 8 9 10 11 12
Fig. 1
Typical on-state characteristics
Fig. 2
Typical transfer characteristics
0.08 0.07 0.06 0.05 Eon, E off [J] Eon, Eoff [J] VCC = 600 V RG = 8.2 ohm VGE = ±15 V Tvj = 125 °C Lσ = 60 nH
0.07 VCC = 600 V IC = 150 A VGE = ±15 V Tvj = 125 °C Lσ = 60 nH
0.06
0.05
0.04
Eon
0.04 0.03 0.02 0.01 0 0 50 100 150 IC [A] 200 250 300 Eon Eoff
0.03
0.02 Eoff 0.01
0 0 10 20 30 40 50 RG [ohm]
Fig. 3
Typical switching characteristics vs collector current
Fig. 4
Typical switching characteristics vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1637-00 July 06 page 4 of 5
5SMX 12M1273
20
100
VCC = 600 V 15 VCC = 800 V
10
VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Cies
VGE [V]
10
C [nF]
Coes
1
5
Cres
IC = 150 A Tvj = 25 °C 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Qg [µC]
0.1 0 5 10 15 20 VCE [V] 25 30 35
Fig. 5
Typical gate charge characteristics
Fig. 6
Typical capacitances vs collector-emitter voltage
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1637-00 July 06