5SMX12M6500

VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-01 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 4400 V, VCEM ≤ 6500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C min max 6500 25 50 Unit V A A V µs °C -20 20 10 -40 125 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12M6500 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 3600 V, IC = 25 A, RG = 82 Ω, VGE = ±15 V, Lσ = 6800 nH, inductive load VCC = 3600 V, IC = 25 A, RG = 56 Ω, VGE = ±15 V, Lσ = 6800 nH, inductive load VCC = 3600 V, IC = 25 A, VGE = ±15 V, RG = 82 Ω, Lσ = 6800 nH, inductive load, FWD: ½ 5SLX12M6500 VCC = 3600 V, IC = 25 A, VGE = ±15 V, RG = 56 Ω, Lσ = 6800 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 25 A, VGE = 15 V VCE = 6500 V, VGE = 0 V Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C min 6500 typ max Unit V 4.2 5.4 10 4000 -200 6 400 6.28 0.38 0.06 5 690 550 340 270 1430 1450 540 690 180 200 8 V V µA µA nA V nC nF Ω ns ns ns ns VCE = 0 V, VGE = ±20 V, Tvj = 125 °C IC = 10 mA, VCE = VGE, Tvj = 25 °C IC = 25 A, VCE = 3600 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C Turn-on switching energy Eon mJ 200 85 mJ 130 110 A Turn-off switching energy Eoff Short circuit current 2) ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 4400 V, VCEM ≤ 6500 V Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1627-01 Sep 05 page 2 of 5 5SMX 12M6500 Mechanical properties Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization 3) 3) Unit 13.6 x 13.6 9.52 x 9.5 1.56 x 1.53 670 ± 20 AlSi1 AlSi1 + TiNiAg 4 1.8 + 1.2 mm mm mm µm µm µm LxW front (E) back (C) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing 1.80 1.56±0.05 G 13.56 ±0.05 1.53±0.05 1.77 9.95 9.52 Emitter 9.50 9.92 13.56 ±0.05 Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1627-01 Sep 05 page 3 of 5 5SMX 12M6500 50 50 VCE = 20 V 40 25 °C 30 IC [A] 125 °C IC [A] 20 40 30 20 25 °C 125 °C 10 10 VGE = 15V 0 0 1 2 3 4 VCE [V] 5 6 7 8 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics 0.6 VCC = 3600V RGon = 82 ohm RGoff = 56 ohm VGE = ±15V Tvj = 125 °C Ls = 6.8 µH Eon, Eoff [J] 0.6 VCC = 3600 V IC = 25A VGE = ±15 V Tvj = 125 °C Lσ = 6.8 µH 0.5 0.5 0.4 Eon, Eoff [J] 0.4 Eon 0.3 0.3 Eon 0.2 Eoff 0.2 0.1 E sw [J] = 1.5 x 10 -4 x I C 2 + 8.1 x 10 -3 x I C + 0.03 0.1 Eoff 0 0 10 20 30 IC [A] 40 50 0 0 100 200 300 RG [ohm] 400 500 600 Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1627-01 Sep 05 page 4 of 5 5SMX 12M6500 20 10 Cies VCC = 3600 V 15 VCC = 4400 V VGE [V] C [nF] 1 10 Coes 0.1 5 Cres VGE = 0V fOSC = 1 MHz VOSC = 50 mV 0.01 IC = 25 A Tvj = 25 °C 0 0 0.1 0.2 Qg [µC] 0.3 0.4 0 5 10 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1627-01 Sep 05