VCE IC
= =
1200 V 150 A
IGBT-Die
5SMY 12M1200
Die size: 13.5 x 13.5 mm
Doc. No. 5SYA1639-01 Sep 06
• Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area
Maximum rated values
Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature
1)
1)
Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C
min
max 1200 150 300
Unit V A A V µs °C
-20
20 10
-40
150
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SMY 12M1200
IGBT characteristic values
Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time
2)
Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 600 V, IC = 150 A, RG = 6.8 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load VCC = 600 V, IC = 150 A, RG = 6.8 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load VCC = 600 V, IC = 150 A, VGE = ±15 V, RG = 6.8 Ω, Lσ = 60 nH, inductive load, FWD: 2x 5SLX 12F1200 VCC = 600 V, IC = 150 A, VGE = ±15 V, RG = 6.8 Ω, Lσ = 60 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 150 A, VGE = 15 V VCE = 1200 V, VGE = 0 V Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C
min 1200
typ
max
Unit V
1.9 2.1 100 600 -200 5 6.2 1530 10.6 0.71 0.47 2 190 220 60 60 460 530 55 75 11.2 200 7
V V µA µA nA V nC nF Ω ns ns ns ns
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C IC = 6 mA, VCE = VGE, Tvj = 25 °C IC = 150 A, VCE = 600 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C
Turn-on switching energy
Eon
mJ 16.7 9.8 mJ 15.3 650 A
Turn-off switching energy
Eoff
Short circuit current
2)
ISC
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 900 V, VCEM ≤ 1200 V
Characteristic values according to IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1639-01 Sep 06 page 2 of 5
5SMY 12M1200
Mechanical properties
Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization
3) 3)
Unit 13.5 x 13.5 12.0 x 12.0 1.47 x 1.47 130 ± 20 AlSi1 Al / Ti / Ni / Ag 4 1.2 mm mm mm µm µm µm
LxW
front (E) back (C)
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline drawing
1.58 1.47 ±0.05
G
13.47 ±0.05 1.47 ±0.05 1 .5 7
1 2 .3 1
1 1 .9 6
Emitter
11.97 12.33 13.49 ±0.05
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1639-01 Sep 06 page 3 of 5
5SMY 12M1200
300
450 VCE = 20 V 400
250 350 25 °C 200 125 °C 150 300 250 200 100 150 100 50 50 VGE = 15 V 0 0 1 2 VCE [V] 3 4 0 0 2 4 6 8 10 12 14 VGE [V] 25 °C 125 °C
IC [A]
Fig. 1
Typical on-state characteristics
Fig. 2
IC [A]
Typical transfer characteristics
160 140 120 100 80 Eon 60 VCC = 600 V RG = 6.8 ohm VGE = ±15 V Tvj = 125 °C Lσ = 60 nH Eon, Eoff [mJ]
70 VCC = 600 V IC = 150 A VGE = ±15 V Tvj = 125 °C Lσ = 60 nH Eon 40
60
50
Eon, Eoff [mJ]
30
20 40 Eoff 20
Esw [mJ] = 8.2 x E-4 x I C2 + 2.65 x E-2 x IC + 7.33
Eoff
10
0 0 100 200 IC [A] 300 400 500
0 0 10 20 30 40 50 RG [ohm]
Fig. 3
Typical switching characteristics vs collector current
Fig. 4
Typical switching characteristics vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1639-01 Sep 06 page 4 of 5
5SMY 12M1200
20
100
VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 600 V 15 VCC = 900 V VGE [V]
10
Cies
10
C [nF]
Coes
1
5 Cres IC = 150 A Tvj = 25 °C 0 0.0 0.2 0.4 0.6 0.8 Qg [µC] 1.0 1.2 1.4
0.1 0 5 10 15 20 VCE [V] 25 30 35
Fig. 5
Typical gate charge characteristics
Fig. 6
Typical capacitances vs collector-emitter voltage
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1639-01 Sep 06