5STB18N4200

VSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 1920 A 3020 A 32000 A 0.96 V 0.285 mΩ Bi-Directional Control Thyristor 5STB 18N4200 Doc. No. 5SYA1040-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for traction, energy and industrial applications • Optimum power handling capability • Interdigitated amplifying gate. The electrical and thermal data are valid for one thyristor half of the device. Blocking Part Number VSM VRM ISM IRM dV/dtcrit VRM is equal to VSM up to Tj = 110°C 5STB 18N4200 4200 V 4200 V 5STB 18N4000 4000 V 4000 V ≤ 400 mA ≤ 400 mA 1000 V/µs 5STB 18N3600 3600 V 3600 V Conditions f = 5 Hz, tp = 10ms f = 50 Hz,tp = 10ms VSM VRM Tj = 125°C @ Exp. to 0.67xVSM Mechanical data FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 2.9 kg 53 mm 22 mm 90 kN 81 kN 108 kN ABB Semiconductors AG reserves the right to change specifications without notice. 5STB 18N4200 On-state ITAVM ITRMS ITSM I2t Max. average on-state t Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 1920 A 3020 A 32000 A 35000 A 5120 kA2s 5000 kA2s VT VT0 rT IH IL On-state voltage Threshold voltage Slope resistance Holding current 1.53 V 0.96 V 0.285 mΩ 50-250 mA 25-150 mA Latching current 100-500 mA 50-300 mA Tj Tj Tj Tj = 25°C = 125°C = 25°C = 125°C tp tp tp tp IT IT = = = = = = 10 ms Tj = 125°C 8.3 ms After surge: 10 ms VD = VR = 0V 8.3 ms 2000 A 1000 - 3000 A Tj = 125°C Half sine wave, TC = 70°C Switching di/dtcrit Critical rate of rise of on-state current 250 A/µs 500 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C 60 sec. f = 50Hz VD = 0.4⋅VDRM ITRM = 3000 A IFG = 2 A, tr = 0.5 µs IFG = 2 A, tr = 0.5 µs td tq Qrr Delay time Turn-off time ≤ ≤ min max 3.0 µs 550 µs VD ≤ 0.67⋅VDRM ITRM = 3000 A, Tj = 125°C dvD/dt = 20V/µs VR > 200 V, diT/dt = -1.5 A/µs Recovery charge 2100 µAs 3200 µAs Triggering VGT IGT VGD IGD VFGM IFGM VRGM PG Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Maximum gate power loss ≤ ≤ ≥ ≥ 2.6 V 400 mA 0.3 V 10 mA 12 V 10 A 10 V 3W Tj = 25°C Tj = 25°C VD = 0.4⋅VRM VD = 0.4⋅VRM Tj = 125°C Tj = 125°C ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1040-03 Sep. 01 page 2 of 5 5STB 18N4200 Thermal Tj Tstg RthJC Operating junction temperature range Storage temperature range Thermal resistance junction to case -40…125 °C -40…150 °C 22.8 K/kW 22.8 K/kW 11.4 K/kW RthCH Thermal resistance case to heat sink Analytical function for transient thermal impedance: Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled 4 K/kW 2 K/kW ZthJC [K/kW] 15 180° sine: add 1 K/kW 180° rectangular: add 1 K/kW 120° rectangular: add 1 K/kW 60° rectangular: add 2 K/kW ZthJC(t) = å Ri(1 - e i =1 i Ri(K/kW) τi(s) 1 6.77 0.8651 2 2.51 0.1558 3 1.34 0.0212 n - t/τ i ) 4 10 5 Fm = 81..108 kN Double-side cooling 0 0.001 BN1 0.78 0.0075 0.010 0.100 1.000 10.000 t [s] Fig. 1 Transient thermal impedance junction to case. Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1040-03 Sep. 01 page 3 of 5 5STB 18N4200 Tcase (°C) 130 Double-sided cooling 125 120 115 110 105 100 95 90 85 80 75 70 0 500 1000 1500 2000 2500 DC 180° rectangular 180° sine 120° rectangular 3000 IT AV (A) Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1040-03 Sep. 01 page 4 of 5 5STB 18N4200 5STB 18N4200 Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of onstate current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1040-03 Sep. 01