5STB25U5200

VSM IT(AV)M IT(RMS) ITSM VT0 rT = = = = = = 5200 V 1980 A 3100 A 42×10 A 1.06 V 0.219 mΩ Bi-Directional Control Thyristor 5STB 25U5200 Preliminary Doc. No. 5SYA1038-02 Jul. 03 • • • • • Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for energy and industrial applications Optimum power handling capability Interdigitated amplifying gate. The electrical and thermal data are valid for one thyristor half of the device. Blocking Maximum rated values 1) Symbol VSM VRM dV/dtcrit Parameter Conditions f = 5 Hz, tp = 10 ms f = 50 Hz, tp = 10 ms Exp. to 0.67 x VRM, Tvj = 110°C Symbol Conditions 5STB 25U5200 5200 V 4400 V 5STB 25U5000 5STB 25U4600 5000 V 4200 V 2000 V/µs min typ max 400 Unit mA 4600 V 4000 V Characteristic values Max. leakage current IRM VRM, Tvj = 110°C VRM is equal to the VSM value up to Tj = 95 °C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 120 typ 135 max 160 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter Weight Surface creepage distance Symbol Conditions m DS min 53 typ max 3.6 Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STB 25U5200 On-state Maximum rated values 1) Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t tp = 10 ms, Tvj = 110 °C, VD = VR = 0 V tp = 8.3 ms, Tvj = 110 °C, VD = VR = 0 V Half sine wave, Tc = 70°C min typ max 1980 3100 42.0×10 3 Unit A A A A2s A A2s Unit V V mΩ mA mA mA mA 8.82×10 45.0×10 6 3 8.40×10 min typ max 1.7 1.06 0.219 Tvj = 25 °C Tvj = 110 °C Tvj = 25 °C Tvj = 110 °C 125 70 900 700 6 Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT VT0 rT IH IL IT = 3000 A, Tvj = 110 °C IT = 1300 A - 4000 A, Tvj= 110 °C Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Tvj = 110 °C, ITRM = 3000 A, VD ≤ 0.67 VRM, IFG = A, tr = 0.5 µs Cont. f = 50 Hz Cont. f = 1Hz min typ max 250 1000 Unit A/µs A/µs µs Circuit commutated turn-off tq time Characteristic values Tvj = 110°C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/µs, VD ≤ 0.67⋅VRM, dvD/dt = 20V/µs, 800 Parameter Recovery charge Symbol Conditions Qrr Tvj = 110°C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/µs VD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs min 3600 typ max 4600 Unit µAs Delay time td 3 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-02 Jul. 03 page 2 of 6 5STB 25U5200 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Max. rated peak forward gate current Peak reverse gate voltage Max. rated peak forward gate power Characteristic values Symbol Conditions VFGM IFGM VRGM For DC gate current PGM min typ max 12 10 10 3 Unit V A V W Max. rated gate power loss PG see Fig. 9 Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Symbol Conditions VGT IGT VGD IGD Tvj = 25 °C Tvj = 25 °C VD = 0.4 x VRM, Tvjmax = 110 °C VD = 0.4 x VRM min typ max 2.6 400 Unit V mA V mA 0.3 10 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min typ max 110 Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled -40 min typ 140 max 8.5 17 17 1.6 3.2 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j - c)(t) = ∑ Ri(1 - e- t/τ i ) i =1 2 1.731 0.1240 i Ri(K/kW) τi(s) 1 5.748 0.9531 3 0.688 0.0144 4 0.333 0.0031 Fig. 1 Transient thermal impedance junction-to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-02 Jul. 03 page 3 of 6 5STB 25U5200 Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT +1) + DTvj ⋅ IT A25 -6 200.70×10 Valid for IT = 500 – 80000 A B25 C25 D25 -6 -3 -3 116.90×10 176.4×10 -2.52×10 VT110 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT +1) + DTvj ⋅ IT Valid for IT = 500 – 80000 A A110 B110 -6 -6 157.10×10 145.60×10 C110 -3 155.60×10 D110 -6 -27.48×10 Fig. 2 Max. on-state voltage characteristics Fig. 3 Max. on-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-02 Jul. 03 page 4 of 6 5STB 25U5200 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) ≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20 µs Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. diG/dt 10 % tr tp (IGM) tp (IGon) t IGon Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-02 Jul. 03 page 5 of 6 5STB 25U5200 Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1038-02 Jul. 03