VDSM ITAVM ITRMS ITSM VT0 rT
• • • •
= = = = = =
1800 V 730 A 1150 A 9000 A 0.80 V 0.540 mΩ
Phase Control Thyristor
5STP 07D1800
Doc. No. 5SYA1027-05 Sep. 01
Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability
Blocking
Part Number VDRM VRSM1 IDRM IRRM dV/dtcrit VRRM 5STP 07D1800 5STP 07D1600 5STP 07D1200 Conditions 1800 V 2000 V 1600 V 1800 V ≤ 100 mA ≤ 100 mA 1000 V/µs 1200 V 1400 V f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDRM VRRM Tj = 125°C
Exp. to 0.67 x VDRM, Tj = 125°C
Mechanical data
FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 0.3 kg 25 mm 14 mm 10 kN 8 kN 12 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
5STP 07D1800
On-state
ITAVM ITRMS ITSM It
2
Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral
730 A 1150 A 9000 A 9500 A
2 2
Half sine wave, TC = 70°C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 1500 A 500 - 1500 A Tj = 125°C Tj = 125°C After surge: VD = VR = 0V
405 kA s tp = 374 kA s tp =
VT VT0 rT IH IL
On-state voltage Threshold voltage Slope resistance Holding current
1.60 V 0.80 V 0.540 mΩ 20-70 mA 10-50 mA
IT = IT =
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Latching current
80-500 mA 50-200 mA
Switching
di/dtcrit Critical rate of rise of on-state current 150 A/µs 300 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C 60 sec. f = 50Hz VD = 0.4⋅VDRM ITRM = 1500 A IFG = 2 A, tr = 0.5 µs IFG = 2 A, tr = 0.5 µs
td tq Qrr
Delay time Turn-off time
≤ ≤ min max
3.0 µs 400 µs
VD ≤ 0.67⋅VDRM ITRM = 1500 A, Tj = 125°C dvD/dt = 20V/µs VR > 200 V, diT/dt = -20 A/µs
Recovery charge
800 µAs 1500 µAs
Triggering
VGT IGT VGD IGD VFGM IFGM VRGM PG Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss 2.6 V 400 mA 0.3 V 10 mA 12 V 10 A 10 V 3W Tj = 25° Tj = 25° VD =0.4 x VDRM VD = 0.4 x VDRM
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1027-05 Sep. 01 page 2 of 5
5STP 07D1800
Thermal
Tjmax Tstg RthJC Max. operating junction temperature range Storage temperature range Thermal resistance junction to case 125 °C -40…140 °C 70 K/kW 74 K/kW 36 K/kW RthCH Thermal resistance case to heat sink
Analytical function for transient thermal impedance:
Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled
15 K/kW 7.5 K/kW
ZthJC(t) = å Ri(1 - e -t/τ i )
i =1
i Ri(K/kW) τi(s) 1 19.18 0.3862 2 9.82 0.0561 3 5.45 0.0058 4 1.44 0.0024 Fig. 1 Transient thermal impedance junction to case.
n
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics. Tj=125°C, 10ms half sine
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1027-05 Sep. 01 page 3 of 5
5STP 07D1800
Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs. mean on-state current.
Fig. 6 Surge on-state current vs. pulse length. Half-sine wave.
Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1027-05 Sep. 01 page 4 of 5
5STP 07D1800
Fig. 8 Gate trigger characteristics.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of onstate current.
Fig. 11 Peak reverse recovery current vs. decay rate of on-state current.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com
Doc. No. 5SYA1027-05 Sep. 01
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