VDRM IT(AV)M IT(RMS) ITSM V(T0) rT
= = = = = =
2200 862 1354 12×103 1 0.404
V A A A V mΩ
Phase Control Thyristor
5STP 09D2201
Doc. No. 5SYA1059-01 March 05
• • •
Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol VDRM, VRRM dV/dtcrit Parameter
Conditions f = 50 Hz, tp = 10 ms Exp. to 1470 V, Tvj = 125°C Symbol Conditions IDRM IRRM
5STP 09D2201 5STP 09D2001 2200 V 2000 V 1000 V/µs min typ
5STP 09D1801 1800 V
Characteristic values
max 70 70
Unit mA mA
Forward leakage current Reverse leakage current
VDRM, Tvj = 125°C VRRM, Tvj = 125°C
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 8
typ 10
max 12 50 100
Unit kN m/s m/s Unit kg mm mm
2 2
Parameter W eight Surface creepage distance
Symbol Conditions m DS
min 25
typ
max 0.26
Air strike distance Da 14 1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 09D2201
On-state
Maximum rated values
1)
Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral
Characteristic values
Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t tp = 10 ms, Tvj = 125 °C, VD = VR = 0 V tp = 8.3 ms, Tvj = 125 °C, VD = VR = 0 V Half sine wave, Tc = 70°C
min
typ
max 862 1354 12×10
3
Unit A A A A2s A A2s Unit V V mΩ mA mA mA mA 1
720×10
3 3
12.8×10 680×10 min typ max 1.6 0.404
3
Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current
Symbol Conditions VT V(T0) rT IH IL Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C IT = 1500 A, Tvj = 125 °C IT = 1000 A - 3500 A, Tvj= 125 °C
170 90 450 350
Switching
Maximum rated values
1)
Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current
Symbol Conditions di/dtcrit di/dtcrit Tvj = 125 °C, IT = IT(AV), VD ≤ 1470 V, IFG = 2 A, tr = 0.3 µs Cont. f = 50 Hz Cont. f = 1 Hz
min
typ
max 200 1000
Unit A/µs A/µs µs
Circuit-commutated turn-off tq time
Characteristic values
Tvj = 125°C, ITRM = 1500 A, VR = 200 V, diT/dt = -12.5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 50V/µs min
200
Parameter Recovery charge
Symbol Conditions Qrr Tvj = 125°C, ITRM = 1500 A, VR = 200 V, diT/dt = -12.5 A/µs VD = 0.4⋅VRM, IFG = 2 A, tr = 0.3 µs, Tvj = 25 °C
typ 1600
max
Unit µAs
Gate turn-on delay time
tgd
2
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1059-01 March 05 page 2 of 6
5STP 09D2201
Triggering
Maximum rated values
1)
Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Mean forward gate power
Characteristic values
Symbol Conditions VFGM IFGM VRGM PG(AV) Symbol Conditions VGT Tvj = -40 °C Tvj = 25 °C Tvj = 125 °C
min
typ
max 12 10 10 3
Unit V A V W Unit V
Parameter Gate-trigger voltage
min
typ
max 4 3
0.25
2 500 250 mA
Gate-trigger current
IGT
Tvj = -40 °C Tvj = 25 °C Tvj = 125 °C 10
150
Thermal
Maximum rated values
1)
Parameter Operating junction temperature range
Characteristic values
Symbol Conditions Tvj
min -40 -40 min
typ
max 125 125
Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW
Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 8...12 kN Anode-side cooled Fm = 8...12 kN Cathode-side cooled Fm = 8...12 kN Double-side cooled Fm = 8...12 kN Single-side cooled Fm = 8...12 kN
typ
max 32 52 83 7.5 15
Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h)
Analytical function for transient thermal impedance:
Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i )
i =1
i Rth i(K/kW) τi(s) 1 13.070 0.4857 2 8.030 0.2162 3 8.200 0.0762 4 2.700 0.0043 Fig. 1 Transient thermal impedance junction-to case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1059-01 March 05 page 3 of 6
5STP 09D2201
i 2dt (106 A2s ) ITSM ( k A ) IT ( A ) 6000
25°C
125°C
20
1,1
5000
18
I TSM
2 ∫i dt
1
4000
16
0,9
3000
14
0,8
2000
12
0,7
1000
10
0,6
0 0 1 2 3 V (V) 4 T
8 1 10 t ( ms )
0,5 100
Fig. 2 Max. on-state voltage characteristics
7
Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V
VG ( V )
14 V FGM
VG ( V )
6
DC = P GAVm
12
5
-40 °C
10
500µs 1ms
4
+25 °C
8
2
IGTmin
+125 °C
4
1
V GTmin
2
10ms DC = P GAVm
0 0
0
0,5
1
0 IG ( A )
2
4
6
8
10
IFGM
3
6
12
IG ( A )
Fig. 4 Gate trigger characteristics
Fig. 5 Gate trigger characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1059-01 March 05 page 4 of 6
5STP 09D2201
PT ( W )
PT ( W ) 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 1000
ψ = 30° 60° 90° 120° 180°
1800 1600 1400 1200 1000 800 600 400 200 0 0 200
ψ = 30° 60° 90° 120° 180° 270°
DC
DC
400
600
800
1000
I TAV ( A )
I TAV ( A )
Fig. 6 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f
TC ( °C )
130
Fig. 7 Forward power loss vs. average forward current, square waveform, f = 50 Hz, T = 1/f
TC ( °C )
130
120
120
110
110
100
100
90
90
80
DC
80
DC 270°
70
70
60 0 200
ψ = 30°
400
60°
600
90° 120° 180°
800 1000
60 0 200
ψ = 30°
400
180° 60° 90° 120°
600 800 1000
I TAV ( A )
I TAV ( A )
Fig. 8 Max. case temperature vs.average forward current, sine waveform, f = 50Hz, T = 1/f
Fig. 9 Max. case temperature vs.average forward current, square waveform, f = 50Hz, T = 1/f
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1059-01 March 05 page 5 of 6
5STP 09D2201
RED WHITE
Fig. 10 Device Outline Drawing.
Related application notes:
Doc. Nr 5SYA2020 5SYA2034 5SYA 2036 Titel Design of RC-Snubber for Phase Control Applications Gate-drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Please refer to http://www.abb.com/semiconductors for actual versions.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1059-01 March 05