5STP10D1601

VDRM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = 1600 969 1521 15×103 0.933 0.302 V A A A V mΩ Phase Control Thyristor 5STP 10D1601 Doc. No. 5SYA1057-01 March 05 • • • Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking Maximum rated values 1) Symbol VDRM, VRRM dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10 ms Exp. to 1070 V, Tvj = 125°C Symbol Conditions IDRM IRRM 5STP 10D1601 5STP 10D1401 1600 V 1400 V 1000 V/µs min typ 5STP 10D1201 1200 V Characteristic values max 70 70 Unit mA mA Forward leakage current Reverse leakage current VDRM, Tvj = 125°C VRRM, Tvj = 125°C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 8 typ 10 max 12 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter W eight Surface creepage distance Symbol Conditions m DS min 25 typ max 0.26 Air strike distance Da 14 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 10D1601 On-state Maximum rated values 1) Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t tp = 10 ms, Tvj = 125 °C, VD = VR = 0 V tp = 8.3 ms, Tvj = 125 °C, VD = VR = 0 V Half sine wave, Tc = 70°C min typ max 969 1521 15×10 3 Unit A A A 6 1.13×10 16×10 3 A2s A 1.06×10 min typ max 1.4 0.933 0.302 Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C 170 90 450 350 6 A2s Unit V V mΩ mA mA mA mA Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT V(T0) rT IH IL IT = 1500 A, Tvj = 125 °C IT = 1000 A - 3600 A, Tvj= 125 °C Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Tvj = 125 °C, IT = IT(AV), VD ≤ 1070 V, IFG = 2 A, tr = 0.3 µs Cont. f = 50 Hz Cont. f = 1 Hz min typ max 200 1000 Unit A/µs A/µs µs Circuit-commutated turn-off tq time Characteristic values Tvj = 125°C, ITRM = 1500 A, VR = 200 V, diT/dt = -12.5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 50V/µs min 150 Parameter Recovery charge Symbol Conditions Qrr Tvj = 125°C, ITRM = 1500 A, VR = 200 V, diT/dt = -12.5 A/µs VD = 0.4⋅VRM, IFG = 2 A, tr = 0.3 µs, Tvj = 25 °C typ 1400 max Unit µAs Gate turn-on delay time tgd 2 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1057-01 March 05 page 2 of 6 5STP 10D1601 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Mean forward gate power Characteristic values Symbol Conditions VFGM IFGM VRGM PG(AV) Symbol Conditions VGT Tvj = -40 °C Tvj = 25 °C Tvj = 125 °C min typ max 12 10 10 3 Unit V A V W Unit V Parameter Gate-trigger voltage min typ max 4 3 0.25 2 500 250 mA Gate-trigger current IGT Tvj = -40 °C Tvj = 25 °C Tvj = 125 °C 10 150 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min -40 -40 min typ max 125 125 Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 8...12 kN Anode-side cooled Fm = 8...12 kN Cathode-side cooled Fm = 8...12 kN Double-side cooled Fm = 8...12 kN Single-side cooled Fm = 8...12 kN typ max 32 52 83 7.5 15 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i Rth i(K/kW) τi(s) 1 13.070 0.4857 2 8.030 0.2162 3 8.200 0.0762 4 2.700 0.0043 Fig. 1 Transient thermal impedance junction-to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1057-01 March 05 page 3 of 6 5STP 10D1601 2 ∫i dt 6000 24 1,5 I TSM 22 1,4 1,3 1,2 1,1 1 0,9 0,8 0,7 100 5000 20 4000 18 16 14 12 3000 2000 1000 10 0 0 1 2 3 VT (V)4 8 1 10 t ( ms ) Fig. 2 Max. on-state voltage characteristics 7 Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V VG ( V ) 14 V FGM VG ( V ) 6 DC = P GAVm 12 5 -40 °C 10 500µs 1ms 4 +25 °C 8 2 IGTmin +125 °C 4 1 V GTmin 2 10ms DC = P GAVm 0 0 0 0,5 1 0 IG ( A ) 2 4 6 8 10 IFGM 3 6 12 IG ( A ) Fig. 4 Gate trigger characteristics Fig. 5 Gate trigger characteristics ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1057-01 March 05 page 4 of 6 i 2dt (106 A2s ) ITS M ( k A ) IT ( A ) 7000 25°C 125°C 26 1,6 5STP 10D1601 PT ( W ) PT ( W ) 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 1 ψ = 30° 60° 90° 120° 80° DC 1800 1600 ψ = 30° 60° 90° 120° 180° 270° DC 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 I TAV ( A ) I TAV ( A ) Fig. 6 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f TC ( °C ) 130 Fig. 7 Forward power loss vs. average forward current, square waveform, f = 50 Hz, T = 1/f TC ( °C ) 130 120 120 110 110 100 100 90 90 80 80 DC 70 70 DC 270° 60 0 200 ψ = 30° 60° 400 600 90° 120°180° 800 1000 1200 60 0 200 ψ = 30° 60° 90°120° 180° 400 600 800 1000 1200 I TAV ( A ) I TAV ( A ) Fig. 8 Max. case temperature vs.average forward current, sine waveform, f = 50Hz, T = 1/f Fig. 9 Max. case temperature vs.average forward current, square waveform, f = 50Hz, T = 1/f ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1057-01 March 05 page 5 of 6 5STP 10D1601 RED WHITE Fig. 10 Device Outline Drawing. Related application notes: Doc. Nr 5SYA2020 5SYA2034 5SYA 2036 Titel Design of RC-Snubber for Phase Control Applications Gate-drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1057-01 March 05