5STP16F2800

VDSM ITAVM ITRMS ITSM VT0 rT • • • • = = = = = = 2800 V 1400 A 2210 A 18000 A 0.82 V 0.370 mΩ Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA1022-03 Sep. 01 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking Part Number VDRM VRSM1 IDRM IRRM dV/dtcrit VRRM 5STP 16F2800 5STP 16F2600 5STP 16F2200 Conditions 2800 V 3000 V 2600 V 2800 V ≤ 200 mA ≤ 200 mA 1000 V/µs 2200 V 2400 V f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDRM VRRM Tj = 125°C Exp. to 0.67 x VDRM, Tj = 125°C Mechanical data FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 0.6 kg 25 mm 14 mm 22 kN 14 kN 24 kN ABB Semiconductors AG reserves the right to change specifications without notice. 5STP 16F2800 On-state ITAVM ITRMS ITSM It 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 1400 A 2210 A 18000 A 19000 A 2 2 Half sine wave, TC = 70°C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 2000 A 800 - 2400 A Tj = 125°C Tj = 125°C After surge: VD = VR = 0V 1620 kA s tp = 1498 kA s tp = VT VT0 rT IH IL On-state voltage Threshold voltage Slope resistance Holding current 1.55 V 0.82 V 0.370 mΩ 25-75 mA 15-60 mA IT = IT = Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Latching current 100- mA 500 50-200 mA Switching di/dtcrit Critical rate of rise of on-state current 150 A/µs 300 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C 60 sec. f = 50Hz VD = 0.4⋅VDRM ITRM = 2000 A IFG = 2 A, tr = 0.5 µs IFG = 2 A, tr = 0.5 µs td tq Qrr Delay time Turn-off time ≤ ≤ min max 3.0 µs 400 µs VD ≤ 0.67⋅VDRM ITRM = 2000 A, Tj = 125°C dvD/dt = 20V/µs VR > 200 V, diT/dt = -20 A/µs Recovery charge 3000 µAs 6000 µAs Triggering VGT IGT VGD IGD VFGM IFGM VRGM PG Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss 2.6 V 400 mA 0.3 V 10 mA 12 V 10 A 10 V 3W Tj = 25° Tj = 25° VD =0.4 x VDRM VD = 0.4 x VDRM ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1022-03 Sep. 01 page 2 of 5 5STP 16F2800 Thermal Tjmax Tstg RthJC Max. operating junction temperature range Storage temperature range Thermal resistance junction to case 125 °C -40…140 °C 33 K/kW 35 K/kW 17 K/kW RthCH Thermal resistance case to heat sink Analytical function for transient thermal impedance: Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled 8 K/kW 4 K/kW ZthJC [K/kW] 20 180° sine: add 1.5 K/kW 180° rectangular: add 2 K/kW 120° rectangular: add 3 K/kW 60° rectangular: add 5 K/kW ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i Ri(K/kW) τi(s) 1 10.35 0.3723 2 3.76 0.0525 3 2.29 0.0057 4 0.67 0.0023 n 15 10 5 Fm = 14..24 kN Double-side cooling TF1 0 0.001 0.010 0.100 1.000 10.000 t [s] Fig. 1 Transient thermal impedance junction to case. Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. Tj=125°C, 10ms half sine ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1022-03 Sep. 01 page 3 of 5 5STP 16F2800 Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1022-03 Sep. 01 page 4 of 5 5STP 16F2800 Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of onstate current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1022-03 Sep. 01