5STP34H1201

VDRM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = 1600 3370 5292 49×103 0.94 0.066 V A A A V mΩ Phase Control Thyristor 5STP 34H1601 Doc. No. 5SYA1065-01 March 05 • • • Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking Maximum rated values 1) Symbol VDRM, VRRM dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10 ms Exp. to 1070 V, Tvj = 125°C Symbol Conditions IDRM IRRM 5STP 34H1601 5STP 34H1401 1600 V 1400 V 1000 V/µs min typ 5STP 34H1201 1200 V Characteristic values max 200 200 Unit mA mA Forward leakage current Reverse leakage current VDRM, Tvj = 125°C VRRM, Tvj = 125°C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 45 typ 50 max 55 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter W eight Surface creepage distance Symbol Conditions m DS min 36 typ max 0.93 Air strike distance Da 15 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 34H1601 On-state Maximum rated values 1) Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t tp = 10 ms, Tvj = 125 °C, VD = VR = 0 V tp = 8.3 ms, Tvj = 125 °C, VD = VR = 0 V Half sine wave, Tc = 70°C min typ max 3370 5292 49×10 3 Unit A A A 6 12.01×10 52.3×10 A2s A A2s Unit V V mΩ mA mA mA mA 3 11.35×10 min typ max 1.2 0.94 0.066 Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C 170 90 1500 1000 6 Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT V(T0) rT IH IL IT = 4000 A, Tvj = 125 °C IT = 4200 A - 12500 A, Tvj= 125 °C Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Tvj = 125 °C, ITRM = A, VD ≤ 2950 V, IFG = 2 A, tr = 0.3 µs Cont. f = 50 Hz Cont. f = 1 Hz min typ max 200 1000 Unit A/µs A/µs µs Circuit-commutated turn-off tq time Characteristic values Tvj = 125°C, ITRM = 4000 A, VR = 100 V, diT/dt = -12.5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 50V/µs min 200 Parameter Recovery charge Symbol Conditions Qrr Tvj = 125°C, ITRM = 4000 A, VR = 100 V, diT/dt = -12.5 A/µs VD = 0.4⋅VRM, IFG = 2 A, tr = 0.3 µs, Tvj = 25 °C typ 2800 max Unit µAs Gate turn-on delay time tgd 2 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1065-01 March 05 page 2 of 6 5STP 34H1601 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Mean forward gate power Characteristic values Symbol Conditions VFGM IFGM VRGM PG(AV) Symbol Conditions VGT Tvj = -40 °C Tvj = 25 °C Tvj = 125 °C min typ max 12 10 10 5 Unit V A V W Unit V Parameter Gate-trigger voltage min typ max 4 3 0.25 2 500 250 mA Gate-trigger current IGT Tvj = -40 °C Tvj = 25 °C Tvj = 125 °C 10 150 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min -40 -40 min typ max 125 125 Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 45...55 kN Anode-side cooled Fm = 45...55 kN Cathode-side cooled Fm = 45...55 kN Double-side cooled Fm = 45...55 kN Single-side cooled Fm = 45...55 kN typ max 10 16 26.5 3 6 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i Rth i(K/kW) τi(s) 1 6.730 0.4871 2 1.440 0.1468 3 0.650 0.0677 4 1.160 0.0079 Fig. 1 Transient thermal impedance junction-to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1065-01 March 05 page 3 of 6 5STP 34H1601 IT ( A ) 25°C 125°C I TSM 75 70 65 20000 18000 16000 ∫i dt 2 17 16 15 14 13 12 11 10 9 8 100 14000 60 12000 10000 8000 6000 4000 2000 0 0 0,5 1 1,5 2 2,5 3 VT ( V ) 30 1 10 t ( ms ) 55 50 45 40 35 Fig. 2 Max. on-state voltage characteristics 7 Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V VG ( V ) 14 V FGM VG ( V ) 6 DC = P GAVm 12 5 -40 °C 10 500µs 1ms 4 +25 °C 8 2 IGTmin +125 °C 4 1 V GTmin 2 10ms DC = P GAVm 0 0 0 0,5 1 0 IG ( A ) 2 4 6 8 10 IFGM 3 6 12 IG ( A ) Fig. 4 Gate trigger characteristics Fig. 5 Gate trigger characteristics ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1065-01 March 05 page 4 of 6 i 2dt (106 A2s ) ITS M ( k A ) 22000 80 18 5STP 34H1601 PT ( W ) 6000 PT ( W ) ψ = 30° 60° 90° 120° 180° DC 6000 ψ = 30° 60° 90° 120°180° 270° DC 5000 5000 4000 4000 3000 3000 2000 2000 1000 1000 0 0 1000 2000 3000 4000 0 0 1000 2000 3000 4000 I TAV ( A ) I TAV ( A ) Fig. 6 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f TC ( °C ) 130 Fig. 7 Forward power loss vs. average forward current, square waveform, f = 50 Hz, T = 1/f TC ( °C ) 130 120 120 110 110 100 100 90 90 80 80 DC 70 70 DC 270° ψ = 30° 60° 0 1000 2000 60 0 ψ = 30° 60° 90° 120° 180° 60 1000 2000 3000 4000 90° 120° 3000 180° 4000 I TAV ( A ) I TAV ( A ) Fig. 8 Max. case temperature vs.average forward current, sine waveform, f = 50Hz, T = 1/f Fig. 9 Max. case temperature vs.average forward current, square waveform, f = 50Hz, T = 1/f ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1065-01 March 05 page 5 of 6 5STP 34H1601 RED WHITE Fig. 10 Device Outline Drawing. Related application notes: Doc. Nr 5SYA2020 5SYA2034 5SYA 2036 Titel Design of RC-Snubber for Phase Control Applications Gate-drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1065-01 March 05