5STP52U5200

VDRM VDSM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = = 4400 5200 4120 6470 85.2×103 1.04 0.115 V V A A A V mΩ Phase Control Thyristor 5STP 52U5200 Doc. No. 5SYA1042-02 Dec. 03 • • • • • Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol VDSM, VRSM VDRM, VRRM VRSM dV/dtcrit Parameter Conditions f = 5 Hz, tp = 10 ms f = 50 Hz, tp = 10 ms tp = 5 ms, single pulse Exp. to 0.67 x VDRM, Tvj = 110°C Symbol Conditions IDSM IRSM 5STP 52U5200 5STP 52U5000 5200 V 4400 V 5700 V 5000 V 4200 V 5500 V 2000 V/µs min typ 5STP 52U4600 4600 V 4000 V 5100 V Characteristic values max 600 600 Unit mA mA Forward leakage current Reverse leakage current VDSM, Tvj = 110°C VRSM, Tvj = 110°C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 120 typ 135 max 160 50 100 Unit kN m/s m/s Unit kg mm mm mm 2 2 Parameter Weight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 135 kN, Ta = 25 °C min 34.4 56 typ max 3.6 35.4 Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 52U5200 On-state Maximum rated values 1) Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t tp = 10 ms, Tvj = 110 °C, VD = VR = 0 V tp = 8.3 ms, Tvj = 110 °C, VD = VR = 0 V Half sine wave, Tc = 70°C min typ max 4120 6470 85.2×10 3 Unit A A A A2s A A2s Unit V V mΩ mA mA mA mA 36.28×10 90.3×10 6 3 33.85×10 min typ max 1.38 1.04 0.115 200 100 900 700 6 Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT V(T0) rT IH IL Tvj = 25 °C Tvj = 110 °C Tvj = 25 °C Tvj = 110 °C IT = 3000 A, Tvj = 110 °C IT = 2000 A - 6000 A, Tvj= 110 °C Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Tvj = 110 °C, ITRM = 3000 A, VD ≤ 0.67 VDRM, IFG = 2 A, tr = 0.5 µs Cont. f = 50 Hz Cont. f = 1Hz min typ max 250 1000 Unit A/µs A/µs µs Circuit-commutated turn-off tq time Characteristic values Tvj = 110°C, ITRM = 3000 A, VR = 200 V, diT/dt = -5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20V/µs 700 Parameter Recovery charge Symbol Conditions Qrr Tvj = 110°C, ITRM = 3000 A, VR = 200 V, diT/dt = -5 A/µs VD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs, Tvj = 25 °C min typ max 12500 Unit µAs Gate turn-on delay time tgd 3 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1042-02 Dec. 03 page 2 of 6 5STP 52U5200 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Average gate power loss Characteristic values Symbol Conditions VFGM IFGM VRGM PG(AV) Symbol Conditions VGT IGT VGD IGD Tvj = 25 °C Tvj = 25 °C VD = 0.4 x VDRM, Tvj = 110 °C VD = 0.4 x VDRM, Tvj = 110°C min typ max 12 10 10 Unit V A V see Fig. 9 min typ max 2.6 400 0.3 10 Unit V mA V mA Parameter Gate-trigger voltage Gate-trigger current Gate non-trigger voltage Gate non-trigger current Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min typ max 110 Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 120...160 kN Anode-side cooled Fm = 120...160 kN Cathode-side cooled Fm = 120...160 kN Double-side cooled Fm = 120...160 kN Single-side cooled Fm = 120...160 kN -40 min typ 140 max 4 8 8 0.8 1.6 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = å R th i (1 - e-t/τ i ) i =1 i Rth i(K/kW) τi(s) 1 2.701 0.9478 2 0.816 0.1249 3 0.326 0.0146 4 0.160 0.0032 Fig. 1 Transient thermal impedance junction-to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1042-02 Dec. 03 page 3 of 6 5STP 52U5200 Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT +1) + DTvj ⋅ IT A25 -6 69.79×10 Valid for IT = 300 – 100000 A B25 C25 D25 -6 -3 -3 67.25×10 160×10 -2.17×10 VT110 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT +1) + DTvj ⋅ IT Valid for IT = 300 – 100000 A A110 -6 20.86×10 B110 -6 66.73×10 C110 -3 130.70×10 D110 -3 2.43×10 Fig. 2 Max. on-state voltage characteristics Fig. 3 Max. on-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current. Turn-on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1042-02 Dec. 03 page 4 of 6 5STP 52U5200 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) ≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20 µs Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. diG/dt 10 % tr tp (IGM) tp (IGon) t IGon Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1042-02 Dec. 03 page 5 of 6 5STP 52U5200 C C Fig. 12 Device Outline Drawing. Related application notes: Doc. Nr 5SYA2020 5SYA2034 5SYA 2036 Titel Design of RC-Snubber for Phase Control Applications Gate-drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1042-02 Dec. 03