1214GN-180LV
180 Watts - 50 Volts, 3ms, 30%
Broad Band 1200 - 1400 MHz
PRELIMINARY
GENERAL DESCRIPTION
CASE OUTLINE
55-KR
Common Source
The 1214GN-180LV is an internally matched, COMMON SOURCE,
class AB GaN on SiC HEMT transistor capable of providing over 16.6dB
gain, 180 Watts of pulsed RF output power at 3ms pulse width, 30% duty
factor across the 1200 to 1400 MHz band. The transistor has internal
pre-match for optimal performance. This hermetically sealed transistor is
designed for L-Band Radar applications. It utilizes gold metallization and
eutectic attach to provide highest reliability and superior ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
300 W
Device Dissipation @ 25C
Maximum Voltage and Current
Drain-Source Voltage (VDSS)
150 V
Gate-Source Voltage (VGS)
-8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +250 C
ELECTRICAL CHARACTERISTICS @ 25C
Symbol
Pout
Gp
d
Dr
VSWR-T
Өjc
Characteristics
Output Power
Power Gain
Drain Efficiency
Droop
Load Mismatch Tolerance
Thermal Resistance
Test Conditions
Pout=180W, Freq=1200, 1300, 1400 MHz
Pout=180W, Freq=1200, 1300, 1400 MHz
Pout=180W, Freq=1200, 1300, 1400 MHz
Pout=180W, Freq=1200, 1300, 1400 MHz
Pout=180W, Freq=1400 MHz
Pulse Width=3mS, Duty=30%
Min
180
16.6
54
Typ
Max
17
60
1.0
3:1
0.73
Units
W
dB
%
dB
°C/W
Bias Condition: Vdd=+50V, Idq=60mA average current (Vgs= -2.0 ~ -4.5V ) with constant
gate Bias
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off)
IG(Off)
BVDSS
Drain leakage current
Gate leakage current
Drain-source breakdown
voltage
VgS = -8V, VD = 50V
VgS = -8V, VD = 0V
Vgs =-8V, ID = 28mA
12
8
150
DC parameters pass/failure criteria will be revised after mass production DC parameters distributions have
been determined.
Issue June 2013
Export Classification: EAR 99
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
mA
mA
V
1214GN-180LV
180 Watts - 50 Volts, 3ms, 30%
Broad Band 1200 - 1400 MHz
Typical Performance Data
Freq(GH)
Pin (W)
Pout (W)
Id (A)
RL (dB)
Eff(%)
G (dB)
Droop (dB)
1.2
4
204
2.03
-13.8
61%
17.1
0.5
1.3
4
202
2.07
-11.4
60%
17.06
0.45
1.4
4
203
2.03
-13.6
61%
17.09
0.45
1214GN‐180LV 3ms@30% 50V
250.0
26
24
200.0
20
100.0
Gain (dB)
Pout (W)
22
150.0
18
50.0
16
0.0
1.6
2.0
2.5
1.2G
3.2
1.3G
4.0
4.5
14
Pin (W)
1.4G
1214GN‐180LV 3ms@30% 50V
250.0
100.0%
90.0%
200.0
70.0%
100.0
Efficiency
Pout (W)
80.0%
150.0
60.0%
50.0
50.0%
0.0
40.0%
1.6
2.0
1.2G
2.5
3.2
1.3G
4.0
4.5
Pin (W)
1.4G
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
1214GN-180LV
180 Watts - 50 Volts, 3ms, 30%
Broad Band 1200 - 1400 MHz
Transistor Impedance Information
Note: Z in is looking into the input circuit;
Z Load is looking into the output circuit.
Impedance Data
Freq (GHz)
Zs
Zl
1.2
2.615 – j2.33
2.904 + j1.436
1.3
2.642 - j1.173
3.36 + j1.22
1.4
2.8 + j0.025
3.09 + j0.781
Please call the representative for detailed circuit configuration.
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
1214GN-180LV
180 Watts - 50 Volts, 3ms, 30%
Broad Band 1200 - 1400 MHz
55-KR PACKAGE DIMENSION
Dimension
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Min (mil)
370
498
700
830
1030
101
151
385
130
003
135
105
085
065
Min (mm)
9.40
12.65
17.78
21.08
26.16
2.56
3.84
9.78
3.30
.076
3.43
2.67
2.16
1.65
Max (mil)
372
500
702
832
1032
102
152
387
132
004
137
107
86
66
Max (mm)
9.44
12.7
17.83
21.13
26.21
2.59
3.86
9.83
3.35
0.10
3.48
2.72
2.18
1.68
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
1214GN-180LV
180 Watts - 50 Volts, 3ms, 30%
Broad Band 1200 - 1400 MHz
The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any
notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other missioncritical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied
warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose,
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Revision History
Revision Level / Date
0.1 / 12 June 2013
Para. Affected
-
Description
Initial Preliminary Release
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
