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1N4773/TR

1N4773/TR

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    DO-35(DO-204AH)

  • 描述:

    DIODE ZENER TEMP COMPENSATED

  • 数据手册
  • 价格&库存
1N4773/TR 数据手册
1N4765 thru 1N4774A 9.1 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The 1N4765 thru 1N4774A series of Zero-TC Reference Diodes provides a selection of 9.1 V nominal voltages and temperature coefficients to as low as 0.0005%/oC for minimal voltage change with temperature when operated at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and JANS also exist by using MQ, MX, MV or MSP respectively for part number prefixes and high reliability screening. Microsemi also offers numerous other Zener Reference Diode products for a variety of other voltages from 6.2 V to 200 V DO-7 (DO-204AA) WWW . Microsemi .C OM DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • APPLICATIONS / BENEFITS JEDEC registered 1N935 thru 1N940 series Standard reference voltage of 9.1V +/- 5% Internal metallurgical bonds JANS Equivalent available via SCD Options for screening in accordance with MILPRF-19500 for JAN, JANTX, JANTXV, and JANS are available by adding MQ, MX, MV, or MSP prefixes respectively to part numbers. For example, designate “MX1N4769A” for a JANTX screen Radiation Hardened devices available by changing “1N” prefix to “RH”, e.g. RH4769A, RH 4774A, etc. Also consult factory for “RH” data sheet brochure for other radiation hardened reference diode products. • • • • • MAXIMUM RATINGS • • MECHANICAL AND PACKAGING o Operating & StorageTemperature: -65 C to +175oC DC Power Dissipation: 250 mW @ TL = 25oC NOTE: For optimum voltage-temperature stability, the test current IZT = 0.5 or 1.0 mA as shown in Electrical Characteristics (less than 10 mW in dissipated power) Solder temperatures: 260 oC for 10 s (maximum) • • • • • • • Copyright  2003 8-19-2003 REV A CASE: Hermetically sealed glass case with DO-7 (DO-204AA) package TERMINALS: Tin-lead plated and solderable per MIL-STD-750, Method 2026 MARKING: Part number and cathode band POLARITY: Reference diode to be operated with the banded end positive with respect to the opposite end TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number) WEIGHT: 0.2 grams. See package dimensions on last page Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N4765 4765 – 1N4774A • Provides minimal voltage changes over a broad temperature range for instrumentation and other circuit designs requiring a voltage reference Temperature coefficient selections available from 0.01%/ºC to 0.0005%/ºC Tight voltage tolerances available by adding tolerance 1%, 2%, 3%, etc. after part number for further identification, e.g. 1N4773A-2%, 1N4774A-1%, 1N4769-3%, 1N4769A-1%, etc. Flexible axial-leaded mounting terminals Nonsensitive to ESD per MIL-STD-750 Method 1020 1N4765 thru 1N4774A 9.1 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION JEDEC TYPE NUMBER 1N4765 1N4765A 1N4766 1N4766A 1N4767 1N4767A 1N4768 1N4768A 1N4769 1N4769A 1N4770 1N4770A 1N4771 1N4771A 1N4772 1N4772A 1N4773 1N4773A 1N4774 1N4774A ZENER VOLTAGE (Note 3) ZENER TEST CURRENT MAXIMUM DYNAMIC IMPEDANCE MAXIMUM REVERSE CURRENT IR @ 6 V MAXIMUM VOLTAGE TEMPERATURE STABILITY (Note 2 & 3) VZ @ IZT VOLTS 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 IZT mA 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 ZZT OHMS 350 350 350 350 350 350 350 350 350 350 200 200 200 200 200 200 200 200 200 200 IR µA 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 ∆VZT mV 68 141 34 70 14 28 7 14 3 7 68 141 34 70 14 28 7 14 3 7 TEMPERATURE RANGE o C 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 EFFECTIVE TEMPERATURE COMPENSIATIONS αVZ o %/ C 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 0.0005 0.0005 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 0.005 0.005 WWW . Microsemi .C OM *ELECTRICAL CHARACTERISTICS @ 25oC *JEDEC Registered Data. NOTES: 1. 2. 3. 4. 5. Measured by superimposing IZ ac rms on IZ dc @ +25oC where IZ ac rms = 10% IZ dc. Maximum allowable change between any two discrete temperatures over the specified temperature range. Voltage measurements to be performed 15 seconds after application of dc current. Designate Radiation Hardened devices with “RH” prefix instead of “1N”, i.e., RH4774A. Consult factory for TX, TXV or JANS equivalent SCDs. PACKAGE DIMENSIONS Copyright  2003 8-19-2003 REV A 1N4765 – 1N4774A All dimensions in: INCH mm Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2
1N4773/TR 价格&库存

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