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1N4778/TR

1N4778/TR

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    DO-35(DO-204AH)

  • 描述:

    DIODE ZENER TEMP COMPENSATED

  • 数据手册
  • 价格&库存
1N4778/TR 数据手册
1N4775 thru 1N4784A 8.5 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The 1N4775 thru 1N4784A series of Zero-TC Reference Diodes provides a selection of 8.5 V nominal voltages and temperature coefficients to as low as 0.0005%/oC for minimal voltage change with temperature when operated at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and JANS also exist by using MQ, MX, MV or MSP respectively for part number prefixes and high reliability screening. Microsemi also offers numerous other Zener Reference Diode products for a variety of other voltages from 6.2 V to 200 V DO-7 (DO-204AA) WWW . Microsemi .C OM DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • APPLICATIONS / BENEFITS JEDEC registered 1N4775 thru 1N4784A series Standard reference voltage of 8.5 V +/- 5% Internal metallurgical bonds Options for screening in accordance with MIL-PRF19500 for JAN, JANTX, JANTXV, and JANS are available by adding MQ, MX, MV, or MSP prefixes respectively to part numbers. For example, designate “MX1N4779A” for a JANTX, or MV1N4784A for a JANTXV screen. Radiation Hardened devices available by changing the “1N” prefix to “RH”, e.g. RH4779A, RH4784A, etc. Also consult factory for “RH” data sheet brochure for other radiation hardened reference diode products. MAXIMUM RATINGS • • • • • MECHANICAL AND PACKAGING o Operating & StorageTemperature: -65 C to +175 C DC Power Dissipation: 250 mW @ TL = 25oC NOTE: For optimum voltage-temperature stability, the test current IZT = 0.5 or 1.0 mA as shown in Electrical Characteristics (less than 10 mW in dissipated power) Solder temperatures: 260 oC for 10 s (maximum) Copyright  2003 8-19-2003 REV A • Provides minimal voltage changes over a broad temperature range for instrumentation and other circuit designs requiring a voltage reference Temperature coefficient selections available from 0.01%/ºC to 0.0005%/ºC Tight voltage tolerances available by adding tolerance 1%, 2%, 3%, etc. after part number for further identification, e.g. 1N4773A-2%, 1N4774A1%, 1N4769-3%, 1N4769A-1%, etc. Flexible axial-leaded mounting terminals Nonsensitive to ESD per MIL-STD-750 Method 1020 • CASE: Hermetically sealed glass case with DO-7 (DO-204AA) package • TERMINALS: Tin-lead plated and solderable per MIL-STD-750, Method 2026 • MARKING: Part number and cathode band • POLARITY: Reference diode to be operated with the banded end positive with respect to the opposite end • TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number) • WEIGHT: 0.2 grams. • See package dimensions on last page Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N4775 4775 – 1N4784A • o • 1N4775 thru 1N4784A SCOTTSDALE DIVISION 8.5 Volt Temperature Compensated Zener Reference Diodes JEDEC TYPE NUMBER ZENER VOLTAGE (Note 5) ZENER TEST CURRENT MAXIMUM DYNAMIC IMPEDANCE 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4779A 1N4780 1N4780A 1N4781 1N4781A 1N4782 1N4782A 1N4783 1N4783A 1N4784 1N4784A VZ @ IZT VOLTS 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 IZT mA 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 ZZT OHMS 200 200 200 200 200 200 200 200 200 200 100 100 100 100 100 100 100 100 100 100 MAXIMUM REVERSE CURRENT IR @ 6 V IR µA 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 MAXIMUM VOLTAGE TEMPERATURE STABILITY (Note 3 & 5) ∆VZT mV 64 132 32 66 13 26 6 13 3 7 64 132 32 66 13 26 6 13 3 7 TEMPERATURE RANGE o C 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 0 to + 75 -55 to +100 EFFECTIVE TEMPERATURE COMPENSIATIONS αVZ o %/ C 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 0.0005 0.0005 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 0.0005 0.0005 WWW . Microsemi .C OM *ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified *JEDEC Registered Data. NOTES: 1. 2. 3. 4. 5. Designate Radiation Hardened devices with “RH” prefix instead of “1N,” i.e., RH4784A. Consult factory for TX, TXV or JANS equivalent SCDs. Measured by superimposing IZ ac rms on IZ dc @ 25oC where IZ ac rms = 10% IZ dc. Maximum allowable change between any two discrete temperatures over the specified temperature change. When ordering devices with a tighter tolerance than specified, use a nominal center voltage of 8.4 volts. Voltage measurements to be performed 15 seconds after application of dc current. PACKAGE DIMENSIONS Copyright  2003 8-19-2003 REV A 1N4775 – 1N4784A All dimensions in: INCH mm Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2
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