1N4944

1N4942 – 1N4946 Qualified Levels: JAN, JANTX, and JANTXV Voidless Hermetically Sealed Fast Recovery Glass Rectifiers Available on commercial versions Qualified per MIL-PRF-19500/359 DESCRIPTION This Series of industry recognized voidless, hermetically sealed fast recovery glass rectifiers are military qualified to MIL-PRF-19500/359 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a working peak reverse voltage selection from 200 to 600 Volts with a 1.0 amp current rating. They are very robust in hard-glass construction and also use an internal metallurgical bond identified as "Category 1" for high-reliability applications. These devices are similar in ratings to the 1N5615 through 1N5619 series where surface mount MELF package configurations are also available by adding a “US” suffix (see separate data sheets). Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • • Popular JEDEC registered 1N4942 through 1N4946 number series. Voidless hermetically sealed glass package. Triple-layer passivation. Internal “Category 1” metallurgical bonds. Working peak reverse voltage 200 to 600 volts. JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/359. RoHS compliant versions available (commercial grade only). “A” Package APPLICATIONS / BENEFITS • • • • • • • • Fast recovery 1 amp rectifiers 200 to 600 V. Military and other high reliability applications. General rectifier applications including bridges, half-bridges, catch diodes, etc. High forward surge current capability. Extremely robust construction. Low thermal construction. Controlled avalanche with peak power capability. Inherently radiation hard as described in Microsemi “MicroNote 050”. MAXIMUM RATINGS @ T A = 25 oC unless otherwise specified Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Lead (Lead length = .375 in) also see Figure 1 Thermal Resistance @ 10 ms heating time Average Rectified Forward Current @ TA = +55°C @ TA = +100°C Working Peak Reverse Voltage 1N4942 1N4944 1N4946 Maximum Forward Surge Current @ tp = 8.3 ms, I O = .750 A, TA = +55 ºC Solder Temperature @ 10 s Symbol TJ and TSTG R ӨJL Value -65 to +175 38 Unit o C o C/W R ӨJX IO 115 (1) (2) 1.0 (2) 0.750 200 400 600 15 ºC/W Amps V RWM I FSM TSP 260 V Amps o C Notes: 1. Derate linearly from 1.0 A at T A = +55 °C to 0.75 A at +100 °C. Derate linearly from 0.75 A to 0 A between +100 °C and +175 °C. 2. For the 1 amp rating at 55 °C ambient or 0.75 amp rating at 100 °C ambient, these I O ratings are for thermal (PC boards or other) mounting methods where thermal resistance from mounting point to ambient is still sufficiently controlled where T J(MAX) in 1.3 is not exceeded. This equates to RθJX ≤ 115 ºC/W as shown. T4-LDS-0295, Rev. 1 (130278) ©2013 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 5 1N4942 – 1N4946 MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Tin/lead or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper. MARKING: Body painted with part number. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: Approximately 340 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N4942 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol C IR t rr VF V (BR) V RWM C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. ELECTRICAL CHARACTERISTICS TYPE 1N4942 1N4944 1N4946 MAXIMUM FORWARD VOLTAGE V FM @ I FM = 1A MINIMUM BREAKDOWN VOLTAGE V (BR) Volts Volts 25°C 0.6 – 1.3 0.6 – 1.3 0.6 – 1.3 150°C 0.6 – 1.5 0.6 – 1.5 0.6 – 1.5 220 440 660 MAXIMUM REVERSE CURRENT I R @ V RWM MAXIMUM JUNCTION CAPACITANCE C J @ V R = 12 V MAXIMUM REVERSE RECOVERY (NOTE 2) t rr µA pF ns 45 35 25 150 150 250 25°C 1.0 1.0 1.0 150°C 200 200 200 NOTE 1: T A = 100 °C, 8.3 ms surges NOTE 2: I F = 0.5 A, I RM = 1 A, I R(REC) = 0.250 A T4-LDS-0295, Rev. 1 (130278) ©2013 Microsemi Corporation Page 2 of 5 1N4942 – 1N4946 Theta (oC/W) GRAPHS Heating Time (sec) PO (W) FIGURE 1 Maximum Thermal Impedance I O (A) FIGURE 2 Rectifier Power vs I O (Average Forward Current) T4-LDS-0295, Rev. 1 (130278) ©2013 Microsemi Corporation Page 3 of 5 1N4942 – 1N4946 Thermal Resistance (oC/W) GRAPHS (continued) Pad Area (sq in) IF (V) FIGURE 3 Thermal Resistance vs FR4 Pad Area At Ambient PCB horizontal (for each pad) with 1, 2, and 3 oz copper V F (V) FIGURE 4 Forward Voltage vs Forward Current T4-LDS-0295, Rev. 1 (130278) ©2013 Microsemi Corporation Page 4 of 5 1N4942 – 1N4946 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters equivalents are given for general information only. 3. Dimension BD shall be measured at the largest diameter. 4. Dimension BL shall include the entire body including slugs and sections of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0295, Rev. 1 (130278) ©2013 Microsemi Corporation Ltr BD BL LD LL DIMENSIONS INCH MILLIMETERS Min Max Min Max 0.065 0.150 1.65 3.81 0.140 0.250 3.56 6.35 0.027 0.033 0.69 0.84 1.00 1.50 25.4 38.1 Notes 3, 4 4 Page 5 of 5