1N5806US/TR

1N5802US, 1N5804US, 1N5806US and URS Available on commercial versions VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS Qualified per MIL-PRF-19500/477 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 2.5 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless glass construction using an internal “Category 1” metallurgical bond. These devices are available in both surface mount MELF and leaded package configurations. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • • JEDEC registered surface mount equivalent of1N5802, 1N5804, 1N5806 series. Voidless hermetically sealed glass package. Quadruple-layer passivation Extremely robust construction. Internal “Category 1” metallurgical bonds. JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/477. RoHS compliant versions available (commercial grade only). “A” Package (URS) APPLICATIONS / BENEFITS • • • • • • • “A” or D-5A Package (US) Ultrafast recovery 2.5 amp rectifier series from 50 to 150 V. Military, space and other high-reliability applications. Switching power supplies or other applications requiring extremely fast switching & low forward loss. High forward surge current capability. Low thermal resistance. Controlled avalanche with peak reverse power capability. Inherently radiation hard as described in Microsemi MicroNote 050. Also available in: “A” Package (axial-leaded) 1N5802, 04 and 06 MAXIMUM RATINGS @ TA = 25oC unless otherwise specified Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-End Cap (see Figure 1) Working Peak Reverse Voltage: 1N5802US & URS 1N5804US & URS 1N5806US & URS (3) Forward Surge Current Average Rectified Output Current o (1) @ TEC = +75 C Average Rectified Output-Current o (2) @ TA = +55 C Capacitance @ V R = 10 V, f = 1 MHz; Vsig = 50 mV (p-p) (4) Reverse Recovery Time Solder Temperature @ 10 s Symbol Value Unit TJ and TSTG R ӨJEC -65 to +175 13 V RWM V I FSM I O1 50 100 150 35 2.5 I O2 1.0 A C 25 pF t rr TSP 25 260 ns o C o C C/W o A A Notes: 1. I O1 is rated at 2.5 A @ T EC = 75 oC. Derate at 50 mA/oC for T EC above 125 oC. o 2. I O2 is rated at 1.0 A @ T A = 55 C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled (R ӨJX < 154 oC/W) where T J(max) 175 oC is not exceeded. Derate at 8.33 o o mA/ C for T A above 55 C. 3. T A = 25 oC @ I O = 1.0 A and V RWM for ten 8.3 ms surges at 1 minute intervals. 4. I F = 0.5 A, I RM = 0.5 A, I R(REC) = .05 A. T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 5 1N5802US, 1N5804US, 1N5806US and URS MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper. MARKING: Body painted and part number. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities. WEIGHT: 193 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5802 US (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Surface Mount package type US = 2 Square end caps URS = 1 Square + 1 Round end cap JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol V BR V RWM IO VF IR C t rr Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs. ELECTRICAL CHARACTERISTICS BREAKDOWN VOLTAGE (MIN.) @ 100 µA V (BR) TYPE 1N5802US & URS 1N5804US & URS 1N5806US & URS Volts 60 110 160 MAXIMUM FORWARD VOLTAGE @ 8.3 ms pulse V FM Volts I F = 1.0 A I F = 2.5 A 0.875 0.975 0.875 0.975 0.875 0.975 REVERSE CURRENT (MAX.) @ V RWM IR µA 25 oC 125 oC 1 175 1 175 1 175 SURGE CURRENT (MAX) REVERSE RECOVERY TIME (MAX) I FSM t rr (Note 1) (Note 2) Amps 35 35 35 ns 25 25 25 THERMAL IMPEDANCE @ t H = 10 ms Z ӨJX (Note 3) o C/W 4.0 4.0 4.0 NOTES: 1. T A = 2.5 oC @ I O = 1.0 A and V RWM for ten 8.3 ms surges at 1 minute intervals (I FSM surge is also a maximum rating). 2. I F = 0.5 A, I RM = 0.5 A, I R(REC) = .05 A (t rr reverse recovery time is also a maximum rating). 3. For the complete thermal impedance curve over a broad range of heating times, see Figure 1. T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 2 of 5 1N5802US, 1N5804US, 1N5806US and URS Theta (oC/W) GRAPHS Heating Time (sec) PO (W) FIGURE 1 Maximum Thermal Impedance I O (A) FIGURE 2 Rectifier Power Versus I O (Average Forward Current) T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 3 of 5 1N5802US, 1N5804US, 1N5806US and URS Thermal Resistance (oC/W) GRAPHS (continued) Pad Area (sq in) FIGURE 3 Thermal Resistance vs FR4 Pad Area At Ambient IF (V) PCB horizontal (for each pad) with 1, 2, and 3 oz copper V F (V) FIGURE 4 Forward Voltage vs Forward Current T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 4 of 5 1N5802US, 1N5804US, 1N5806US and URS PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-solder dip. 4. Minimum clearance of glass body to mounting surface on all orientations. 5. Cathode marking to be either in color band, three dots spaced equally or a color dot on the face of the end tab. 6. Color dots will be .020 inch (0.51 mm) diameter minimum and those on the face of the end tab shall not lie within .020 inch (0.51 mm) of the mounting surface. 7. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 8. On “URS” one end cap shall be square and the other end cap shall be round. Ltr BD BL ECT S DIMENSIONS INCH MILLIMETERS Min Max Min Max .091 .103 2.31 2.62 .168 .200 4.27 5.08 .019 .028 0.48 0.71 .003 0.08 Notes 8 8 PAD LAYOUT DIM A B C INCH 0.288 0.070 0.155 MILLIMETERS 7.32 1.78 3.94 NOTE: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 5 of 5