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1N5812

1N5812

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    DO-203AA

  • 描述:

    DIODE GEN PURP 50V 20A DO203AA

  • 数据手册
  • 价格&库存
1N5812 数据手册
TECHNICAL DATA FAST RECOVERY POWER RECTIFIER Qualified per MIL-PRF-19500/478 Devices 1N5812 1N5812R Qualified Level 1N5814 1N5814R 1N5815 1N5815R JAN JANTX JANTXV 1N5816 1N5816R MAXIMUM RATINGS Ratings Symbol Reverse Voltage Working Peak Reverse Voltage Average Forward Current TC = +1000C (1) Forward Current Surge Peak TC = +1000C tp = 8.3 ms Reverse Recovery Time VR VRWM IO Operating & Storage Junction Temperature 1N5812 1N5814 1N5816 Unit 1N5812R 1N5814R 1N5816R 50 50 100 100 20 150 150 Vdc Vpk Adc 400 Adc trr 35 ηs TJ, Tstg -65 to +175 IFSM 0 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Thermal Resistance, Junction-to-Case 1.5 RθJC 1) Derate linearly 250 mA/0C from +1000C to +1500C, & 300 mA/0C above +1500C Unit C/W *See appendix A for package outline ELECTRICAL CHARACTERISTICS Characteristics Thermal Impedance IH ≥ rated IO; tH ≤ 250ms; 10 mA ≤ IM ≤ 100 mA; tMD = 250 µs (max) Forward Voltage tp ≤ 8.3 ms, duty cycle ≤ 2.0% pulsed IF = 10 A (pk) IF = 20 A (pk) Reverse Current VR = Rated VR (See 1.3 of MIL-PRF-19500/478) Breakdown Voltage IR = 100 µAdc 1N5812, R IR = 100 µAdc 1N5814, R IR = 100 µAdc 1N5816, R Junction Capacitance VR = 10 Vdc, VSIG = 50 mVdc (p-p) max, f = 1.0 MHz Forward Recovery Voltage tp ≥ 20 ηs, tr = 8.0 ηs; IF = 1,000 mA Forward Recovery Time IF = 1,000 mA 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 DO-203AA (DO-4) 0 Symbol Min. 1.35 VF1 VF2 0.860 0.950 IR CJ VFR trr Unit 0 ZθJX V(BR) Max. 10 60 110 160 C/W Vdc Vpk µAdc Vdc 300 pF V(pk) 2.2 15 ηs 120101 Page 1 of 1
1N5812 价格&库存

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