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1N6054

1N6054

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    DO-13(DO-202AA)

  • 描述:

    TVS DIODE 34V 61.9V DO13

  • 详情介绍
  • 数据手册
  • 价格&库存
1N6054 数据手册
1N6036(A) thru 1N6072(A) Available on commercial versions 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/507 DESCRIPTION This popular Transient Voltage Suppressor (TVS) series for 1N6036 thru 1N6072A are JEDEC registered selections for bidirectional devices. All have the same high Peak Pulse Power rating of 1500 W with extremely fast response times. They are also available in military qualified selections as described in the “Features” section herein. They are most often used for protecting against transients from inductive switching environments, induced RF effects, or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are also very successful in protecting airborne avionics and electrical systems. Since their response time is virtually instantaneous, they can also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • • Bidirectional TVS series in axial packages for thru-hole mounting. Suppresses transients up to 1500 watts @ 10/1000 µs (see Figure 1). Clamps transients in less than 100 pico seconds. Working voltage (V WM ) range 5.5 V to 185 V. Hermetically sealed DO-13 metal package. JAN, JANTX, JANTXV military qualifications also available per MIL-PRF-19500/507 for the tighter tolerance “A” suffix types by adding the JAN, JANTX, or JANTXV prefix, e.g. JANTXV1N6036A, etc. RoHS compliant versions available (commercial grade only). DO-13 (DO-202AA) Package Also available in: DO-13 package (unidirectional) 1N5629 – 1N5665A Case 1 package (plastic equivalent) 1.5KE6.8C – 1.5KE220CA APPLICATIONS / BENEFITS • • • • • • Protection from switching transients and induced RF. Protection from ESD & EFT per IEC 61000-4-2 and IEC 61000-4-4. Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: Class 1: 1N6036 to 1N6072A Class 2: 1N6036 to 1N6067A Class 3: 1N6036 to 1N6061A Class 4: 1N6036 to 1N6054A Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance: Class 1: 1N6036 to 1N6064A Class 2: 1N6036 to 1N6057A Class 3: 1N6036 to 1N6049A Class 4: 1N6036 to 1N6042A Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance: Class 2: 1N6036 to 1N6048A Class 3: 1N6036 to 1N6041A Inherently radiation hard as described in Microsemi “MicroNote 050”. DO-215AB package (Gull-wing) SMCG5.0 – SMCG170A DO-214AB package (J-bend) SMCJ5.0 – SMCJ170A MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0097, Rev. 3 (120714) ©2012 Microsemi Corporation Page 1 of 7 1N6036(A) thru 1N6072(A) MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature (1) Peak Pulse Power @ TL = +25 ºC (2) Rated Average Power Dissipation @ TL ≤ +125 ºC Solder Temperature @ 10 s Symbol Value Unit TJ and TSTG P PP P M(AV) TSP -55 to +175 1500 1 260 ºC W W o C Notes: 1. At 10/1000 us with repetition rate of 0.01% or less (see Figures 1, 2, & 4). 2. At 10 mm from body (see derating in Figure 3 and note below). MECHANICAL and PACKAGING • • • • • • • CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass. TERMINALS: All external metal surfaces are tin-lead plated and solderable per MIL-STD-750 method 2026. MARKING: Part number. POLARITY: Not applicable for bidirectional TVS. TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities. WEIGHT: Approx 1.4 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6036 A (e3) Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant (All of the above require “A” suffix) Blank = Commercial Voltage Tolerance A = 5% Blank = 10% JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol V WM V (BR) VC I PP P PP ID I (BR) Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. o Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25 C. Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise due to both the series resistance and thermal rise and positive temperature coefficient (α V(BR) ). Peak Pulse Current: The peak current during the impulse. (See Figure 2) Peak Pulse Power: The pulse power as determined by the product of V C and I PP . Standby Current: The current at the standoff voltage (V WM ). Breakdown Current: The current used for measuring Breakdown Voltage (V (BR) ). T4-LDS-0097, Rev. 3 (120714) ©2012 Microsemi Corporation Page 2 of 7 1N6036(A) thru 1N6072(A) ELECTRICAL CHARACTERISTICS @ 25 oC (Test Both Polarities) JEDEC Type No. 1N6036 *1N6036A 1N6037 *1N6037A 1N6038 *1N6038A 1N6039 *1N6039A 1N6040 *1N6040A 1N6041 *1N6041A 1N6042 *1N6042A 1N6043 *1N6043A 1N6044 *1N6044A 1N6045 *1N6045A 1N6046 *1N6046A 1N6047 *1N6047A 1N6048 *1N6048A 1N6049 *1N6049A 1N6050 *1N6050A 1N6051 *1N6051A 1N6052 *1N6052A 1N6053 *1N6053A 1N6054 *1N6054A 1N6055 *1N6055A 1N6056 *1N6056A 1N6057 *1N6057A 1N6058 *1N6058A 1N6059 *1N6059A 1N6060 *1N6060A 1N6061 *1N6061A Rated Standoff Voltage V WM Volts 5.5 6.0 6.5 7.0 7.0 7.5 8.0 8.5 8.5 9.0 9.0 10.0 10.0 11.0 11.0 12.0 12.0 13.0 14.0 15.0 16.0 17.0 17.0 18.0 19.0 20.0 21.0 22.0 24.0 25.0 26.0 28.0 29.0 30.0 31.0 33.0 34.0 36.0 38.0 40.0 41.0 43.0 45.0 47.0 48.0 53.0 55.0 58.0 60.0 64.0 66.0 70.0 T4-LDS-0097, Rev. 3 (120714) Breakdown Voltage V (BR) V (BR)min V (BR)max @ I (BR) Volts 6.75 7.13 7.38 7.79 8.19 8.65 9.0 9.5 9.9 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 45.9 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3 73.8 77.9 Volts 8.25 7.88 9.02 8.61 10.00 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.5 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 56.1 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 86.1 mA 10 10 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Maximum Clamping Voltage V C @ I PP Maximum Standby Current I D @ V WM Maximum Peak Pulse Current I PP (See Fig. 2) Volts 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 98.0 92.0 108.0 103.0 118.0 113.0 µA 1000 1000 500 500 200 200 50 50 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Amps 128 132 120 124 109 112 100 103 93 96 87 90 79 82 68 71 64 67 56.5 59.5 51.5 54 47 49 43 45 38.5 40 34.5 36 31.5 33 29 30 26.5 28 24 25.3 22.2 23.2 20.4 21.4 18.6 19.5 16.9 17.7 15.3 16.3 13.9 14.6 12.7 13.3 ©2012 Microsemi Corporation Maximum Temperature Coefficient of V (BR) α V(BR) o %/ C .061 .061 .065 .065 .068 .068 .073 .073 .075 .075 .078 .078 .081 .081 .084 .084 .086 .086 .088 .088 .090 .090 .092 .092 .094 .094 .095 .096 .097 .097 .098 .098 .099 .099 .100 .100 .101 .101 .101 .101 .102 .102 .103 .103 .104 .104 .104 .104 .105 .105 .105 .105 Page 3 of 7 1N6036(A) thru 1N6072(A) ELECTRICAL CHARACTERISTICS @ 25 oC (Test Both Polarities) JEDEC Type No. 1N6062 *1N6062A 1N6063 *1N6063A 1N6064 *1N6064A 1N6065 *1N6065A 1N6066 *1N6066A 1N6067 *1N6067A 1N6068 *1N6068A 1N6069 *1N6069A 1N6070 *1N6070A 1N6071 *1N6071A 1N6072 *1N6072A Rated Standoff Voltage V WM Breakdown Voltage V (BR) Maximum Clamping Voltage V C @ I PP Maximum Standby Current I D @ V WM Maximum Peak Pulse Current I PP (See Fig. 2) V (BR)min V (BR)max @ I (BR) Volts Volts Volts mA Volts µA Amps 73.0 75.0 81.0 82.0 90.0 94.0 95.0 100.0 105.0 110.0 121.0 128.0 137.0 145.0 145.0 150.0 155.0 160.0 165.0 170.0 175.0 185.0 81.9 86.5 90.0 95.0 99.0 105.0 108.0 114.0 117.0 124.0 135.0 143.0 153.0 162.0 162.0 171.0 171.0 181.0 180.0 190.0 198.0 209.0 100.0 95.5 110.0 105.0 121.0 116.0 132.0 126.0 143.0 137.0 165.0 158.0 187.0 179.0 198.0 189.0 210.0 200.0 220.0 210.0 242.0 231.0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 131.0 125.0 144.0 137.0 158.0 152.0 176.0 168.0 191.0 182.0 223.0 213.0 258.0 245.0 274.0 261.0 292.0 278.0 308.0 294.0 344.0 328.0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 11.4 12.0 10.4 11.0 9.5 9.9 8.5 8.9 7.8 8.2 6.7 7.0 5.8 6.1 5.5 5.7 5.1 5.4 4.9 5.1 4.3 4.6 Maximum Temperature Coefficient of V (BR) α V(BR) o %/ C .106 .106 .106 .106 .107 .107 .107 .107 .107 .107 .108 .108 .108 .108 .108 .108 .108 .108 .108 .108 .108 .108 * Also available in military qualified types by adding the prefix JAN, JANTX or JANTXV per MIL-PRF-19500/507. T4-LDS-0097, Rev. 3 (120714) ©2012 Microsemi Corporation Page 4 of 7 1N6036(A) thru 1N6072(A) Peak Pulse Power (Ppp) or Current Ipp in percent of 25° C Rating GRAPHS Ambient Temperature in °C Reverse Peak Pulse Power (Ppp) FIGURE 1 Derating Curve Pulse Time (t p ) FIGURE 2 Peak Pulse Power versus Pulse Time T4-LDS-0097, Rev. 3 (120714) ©2012 Microsemi Corporation Page 5 of 7 1N6036(A) thru 1N6072(A) Pulse Current in Percent of Ipp GRAPHS Time (t) in milliseconds Pulse Current in Percent of Ipp FIGURE 3 Current impulse waveform (I PP = 10 μs) Time (t) in milliseconds FIGURE 4 Current impulse waveform (I PP = 8 μs). T4-LDS-0097, Rev. 3 (120714) ©2012 Microsemi Corporation Page 6 of 7 1N6036(A) thru 1N6072(A) PACKAGE DIMENSIONS NOTES: 1 Dimensions are in inches. 2 Millimeter equivalents are given for general information only. 3 The major diameter is essentially constant along its length. 4 Within this zone, diameter may vary to allow for lead finishes and irregularities. 5 Dimension to allow for pinch or seal deformation anywhere along tubulation. 6 Symbol for bidirectional transient suppressor. 7 Lead 1 shall be electrically connected to the case. 8 In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0097, Rev. 3 (120714) Symbol BD BL BLT CD LD LL LU ©2012 Microsemi Corporation Dimensions Inches Millimeters Min Max Min Max .215 .293 .045 .025 1.000 .235 .357 .570 .100 .035 1.625 .188 5.46 7.44 1.14 0.64 25.40 5.97 9.07 14.48 2.54 0.89 41.28 4.78 Notes 3 5 4 Page 7 of 7
1N6054
物料型号:1N6036(A)至1N6072(A)

器件简介:这些器件是JEDEC注册的双向瞬态电压抑制器(TVS),具有高达1500W的峰值脉冲功率和极快的响应时间。它们通常用于保护感应开关环境、射频感应效应或次级闪电效应引起的瞬态,也适用于保护航空电子设备和电气系统。

引脚分配:文档中未明确提供引脚分配信息,但提到了DO-13封装,通常这种封装是双引脚设计,没有特定的引脚分配

参数特性: - 工作电压范围(VWM):5.5V至185V - 峰值脉冲电流(Ipp):从50A至1000A不等,具体取决于型号 - 峰值脉冲功率(Ppp):1500W - 钳位时间:少于100皮秒 - 环境温度范围:-55°C至+175°C

功能详解:这些TVS二极管能够抑制高达1500瓦特的瞬态,并且响应时间极快,适用于保护电子设备免受静电放电(ESD)、电快速瞬变(EFT)和次级闪电的侵害。

应用信息: - 保护开关瞬态和感应射频 - 符合IEC 61000-4-2和IEC 61000-4-4标准的ESD和EFT保护 - 符合IEC61000-4-5标准的次级闪电保护

封装信息: - 标准封装为DO-13(DO-202AA),也有塑料等效的Case 1封装 - 提供了符合RoHS标准的商业级版本
1N6054 价格&库存

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