1N6148A

1N6138A – 1N6173A Available on commercial versions Voidless Hermetically Sealed Bidirectional Transient Voltage Suppressors Qualified to MIL-PRF-19500/516 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This series of industry recognized voidless, hermetically sealed bidirectional Transient Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/516 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a working peak “standoff” voltage selection from 5.2 to 152 Volts with a 1500 W rating for a 10/1000 µs pulse. They are very robust in hard-glass construction and use internal Category 1 metallurgical bonds for high reliability. These devices are available as both a non-suffix part and an “A” version part involving different voltage tolerances as described in the nomenclature section. These devices are also available in a surface mount MELF package configuration. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • High surge current and peak pulse power provides transient voltage protection for sensitive circuits Triple-layer passivation Internal “Category 1” metallurgical bonds Voidless hermetically sealed glass package JAN, JANTX, JANTXV and JANS qualified versions are available per MIL-PRF-19500/516. (See part nomenclature for all available options.) RoHS compliant versions available (commercial grade only) “C” Package Also available in: “C” SQ-MELF Package (surface mount) 1N6138US – 1N6173US APPLICATIONS / BENEFITS • • • • • • • • • Military and other high-reliability applications Extremely robust construction Extensive range in working peak “standoff” voltage (V WM ) from 5.2 to 152 volts 1500 watt peak pulse power (P PP ) for a 10/1000 us test pulse ESD and EFT protection per IEC6100-4-2 and IEC61000-4-4 respectively Protection from the secondary effects of lightning per select levels in IEC61000-4-5. Flexible axial-leaded mounting terminals Non-sensitive to ESD per MIL-STD-750 method 1020 Inherently radiation hard as described in Microsemi “MicroNote 050” MAXIMUM RATINGS @ TA = 25 oC unless otherwise noted. Parameters/Test Conditions Junction and Storage Temperature (1) Thermal Resistance Junction-to-Lead Peak Pulse Power @ 25 ºC o (1) Off-State Power @ TL = 75 C o (2) Off-State Power @ TA = 25 C Impulse Repetition Rate Solder Temperature @ 10 s Notes: 1. 2. Symbol Value TJ and TSTG R ӨJL P PP PD PD df TSP -55 to +175 20 1500 5.0 3.0 0.01 260 Unit o C C/W W W W % o C o At 3/8 inch lead length from body (see figure 4). Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T OP or T J(MAX) is not exceeded (also see figure 6). T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 7 1N6138A – 1N6173A MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed voidless hard glass with tungsten slugs TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available on commercial grade only. MARKING: Body paint and part number POLARITY: No polarity marking for these bidirectional TVSs TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: Approximately 1270 milligrams See package dimensions on last page. PART NOMENCLATURE JAN 1N6138 A e3 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Voltage Tolerance A = Standard Blank =5% higher V C , 5% lower min. V (BR) and 5% lower I PP JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Definition Symbol α V(BR) Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in temperature that caused it expressed in %/°C or mV/°C. V (BR) Breakdown Voltage: The voltage across the device at a specified current I (BR) in the breakdown region. Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. Standby Current: The current through the device at rated stand-off voltage. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an impulse current (I PP ) for a specified waveform. Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The impulse power is the maximum-rated value of the product of I PP and V C . V WM ID VC P PP T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 2 of 7 1N6138A – 1N6173A ELECTRICAL CHARACTERISTICS INDUSTRY TYPE NUMBER (Note 1) 1N6138A 1N6139A 1N6140A 1N6141A 1N6142A 1N6143A 1N6144A 1N6145A 1N6146A 1N6147A 1N6148A 1N6149A 1N6150A 1N6151A 1N6152A 1N6153A 1N6154A 1N6155A 1N6156A 1N6157A 1N6158A 1N6159A 1N6160A 1N6161A 1N6162A 1N6163A 1N6164A 1N6165A 1N6166A 1N6167A 1N6168A 1N6169A 1N6170A 1N6171A 1N6172A 1N6173A MINIMUM BREAKDOWN VOLTAGE (Note 1) V (BR) @ I (BR) Volts 6.46 7.13 7.79 8.65 9.50 10.45 11.40 12.35 14.25 15.20 17.10 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 104.5 114.0 123.5 142.5 152.0 171.0 190.0 mA 175 175 150 150 125 125 100 100 75 75 65 65 50 50 50 40 40 30 30 30 25 25 20 20 20 20 15 15 12 12 10 10 8 8 5 5 RATED STANDOFF VOLTAGE MAXIMUM STANDBY CURRENT V WM I D @ V WM V 5.2 5.7 6.2 6.9 7.6 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56.0 62.2 69.2 76.0 86.6 91.2 98.8 114.0 121.6 136.8 152.0 µA 500 300 100 100 100 20 20 20 20 20 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 MAXIMUM CLAMPING VOLTAGE (Note 1) V C @ I PP Volts 10.5 11.2 12.1 13.4 14.5 15.6 16.9 18.2 21.0 22.3 25.1 27.7 30.5 33.3 37.4 41.6 45.7 49.9 53.6 59.1 64.6 70.1 77.0 85.3 97.1 103.1 112.8 125.1 137.6 151.3 165.1 178.8 206.3 218.4 245.7 273.0 MAXIMUM PEAK PULSE CURRENT (Note 1) I PP MAXIMUM TEMP. COEF. OF V (BR) α V(BR) Amps 142.8 133.9 124.0 111.9 103.4 96.2 88.8 82.4 71.4 67.3 59.8 54.2 49.2 45.0 40.1 36.0 32.8 30.1 28.0 25.4 23.2 21.4 19.5 17.6 15.4 14.5 13.3 12.0 10.9 9.9 9.1 8.4 7.3 6.9 6.1 5.5 %/oC 0.05 .06 .06 .06 .07 .07 .07 .08 .08 .08 .085 .085 .085 .09 .09 .09 .095 .095 .095 .095 .095 .095 .095 .100 .100 .100 .100 .100 .100 .100 .100 .105 .105 .105 .110 .110 Notes: 1. Part number without the A suffix has 5% higher V C , 5% lower minimum V (BR) , and 5% lower I PP . T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 3 of 7 1N6138A – 1N6173A Peak Pulse Power (PPP) GRAPHS Pulse Time (t p ) Max Peak Pulse Power (PPP) or current (IPP) in percent of Max Ratings FIGURE 1 Peak Pulse Power vs. Pulse Time Junction Temperature (T J ) in °C FIGURE 2 Peak Pulse Power vs TJ (prior to impulse) T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 4 of 7 1N6138A – 1N6173A Pulse Current (IPP) in Percent of IPP GRAPHS Time (t) in milliseconds DC Operation (W) Maximum Rating FIGURE 3 Pulse Wave Form T A (°C) (Ambient) FIGURE 4 Temperature-Power Derating Curve T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 5 of 7 1N6138A – 1N6173A Maximum Steady-State Power in Watts GRAPHS Ambient Temperature (T A ) in °C FIGURE 5 Steady-State Derating Curve for Free-Air Mounting (RθJA = 50 ºC/W) T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 6 of 7 1N6138A – 1N6173A PACKAGE DIMENSIONS Ltr BD BL LD LL L1 Dimensions Inches Millimeters Min Max Min Max 0.135 0.185 3.43 4.70 0.140 0.195 3.56 4.95 0.036 0.042 0.91 1.07 1.00 1.30 25.4 33.02 0.030 0.76 Notes 3 4 Schematic Symbol NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension BD shall be measured at the largest diameter. 4. Dimension L1 lead diameter uncontrolled in this area. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 7 of 7