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1N6627

1N6627

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    Axial

  • 描述:

    DIODE GEN PURP 440V 1.75A AXIAL

  • 数据手册
  • 价格&库存
1N6627 数据手册
1N6626 thru 1N6631 VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. “E” Package WWW . Microsemi .C OM DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • • • APPLICATIONS / BENEFITS Popular JEDEC registered 1N6626 to 1N6631 series Voidless hermetically sealed glass package Extremely robust construction Triple-layer passivation Internal “Category I” Metallurgical bonds JAN, JANTX, and JANTXV available per MIL-PRF19500/590 Further options for screening in accordance with MILPRF-19500 for JANS by using a “SP” prefix, e.g. SP6626, SP6629, etc. Surface mount equivalents also available in a square endcap MELF configuration with “US” suffix (see separate data sheet for 1N6626US thru 1N6631US) • • • • • • • MicroNote 050 MAXIMUM RATINGS • • • • • • • MECHANICAL AND PACKAGING o Junction Temperature: -65 C to +150 C Storage Temperature: -65oC to +175oC Peak Forward Surge Current @ 25oC: 75A (except 1N6631 which is 60A) Note: Test pulse = 8.3ms, half-sine wave. o Average Rectified Forward Current (IO) at TL= +75 C (L=.375 inch from body): 1N6626 thru 1N6628 2.3 A 1N6629 thru 1N6631 1.8 A (Derate IO linearly at 1.0%/oC for TL> +75oC) Average Rectified Forward Current (IO) at TA=25oC: 1N6626 thru 1N6628 1.75 A 1N6629 thru 1N6631 1.40 A (Derate IO linearly at 0.80%/ oC for TA>+25oC. This IO rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) is not exceeded. See MIL-PRF-19500/590) Thermal Resistance L= 0.375 inch (RθJL): 22oC/W Capacitance at VR= 10 V: 40 pF o Solder temperature: 260 C for 10 s (maximum) Copyright © 2009 10-01-2009 REV F; SA7-57.pdf • • • • • • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) over Copper. MARKING: Body painted and part number, etc. POLARITY: Cathode indicated by band Tape & Reel option: Standard per EIA-296 Weight: 750 mg See package dimensions on last page Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 1N6626 thru 1N6631 • o Ultrafast recovery rectifier series 200 to 1000 V Military and other high-reliability applications Switching power supplies or other applications requiring extremely fast switching & low forward loss High forward surge current capability Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi Page 1 1N6626 thru 1N6631 VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION TYPE NUMBER MINIMUM BREAKDOWN VOLTAGE VR IR = 50 μA MAXIMUM FORWARD VOLTAGE VF @ IF WORKING PEAK REVERSE VOLTAGE VRWM MAXIMUM REVERSE CURRENT IR @ VRWM TA=25oC TA=150oC MAXIMUM REVERSE RECOVERY TIME (LOW CURRENT) trr Note 1 MAXIMUM REVERSE RECOVERY TIME (HIGH CURRENT) trr Note 2 V V@A V@A V ns ns μA μA 1N6626 220 1.35V @ 2.0 A 1.50V @ 4.0A 200 2.0 500 30 45 1N6627 440 1.35V @ 2.0 A 1.50V @ 4.0A 400 2.0 500 30 45 1N6628 660 1.35V @ 2.0 A 1.50V @ 4.0A 600 2.0 500 30 45 1N6629 880 1.40V @ 1.4 A 1.70V @ 3.0A 800 2.0 500 50 60 1N6630 990 1.40V @ 1.4 A 1.70V @ 3.0A 900 2.0 500 50 60 1N6631 1100 1.60V @ 1.4 A 1.95V @ 2.0A 1000 4.0 600 60 80 NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750, Method 4031, Condition B. NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, 100 A/μs MIL-STD-750, Method 4031, Condition D. VRWM VF IR C trr FORWARD RECOVERY VOLTAGE VFRM Max IF = 0.5 A tr = 12 ns A 3.5 3.5 3.5 4.2 4.2 5.0 V 8 8 8 12 12 20 SYMBOLS & DEFINITIONS Definition Symbol VBR PEAK RECOVERY CURRENT IRM (rec) IF = 2 A, 100 A/μs Note 2 WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS @ 25oC Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is reached. CHARTS AND GRAPHS Copyright © 2009 10-01-2009 REV F; SA7-57.pdf 1N6626 thru 1N6631 FIGURE 1 Typical Forward Current vs Forward Voltage FIGURE 2 Typical Forward Current vs Forward Voltage Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N6626 thru 1N6631 SCOTTSDALE DIVISION VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS WWW . Microsemi .C OM FIGURE 3 Typical Reverse Current vs. Applied Reverse Voltage FIGURE 4 Typical Reverse Current vs. Applied Reverse Voltage FIGURE 5 Forward Pulse Current vs. Pulse Duration Copyright © 2009 10-01-2009 REV F; SA7-57.pdf FIGURE 6 Reverse Pulse Power vs. Pulse Duration Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3 1N6626 thru 1N6631 10ms 1N6626 thru 1N6631 SCOTTSDALE DIVISION VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS WWW . Microsemi .C OM PACKAGE DIMENSIONS Lead Tolerance = + .002 -.003 in *Includes sections of the lead or fillet over which the lead diameter is uncontrolled. 1N6626 thru 1N6631 Copyright © 2009 10-01-2009 REV F; SA7-57.pdf Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 4
1N6627 价格&库存

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