25AA010AT-I/ST

25AA010A/25LC010A 1-Kbit SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25AA010A 1.8V-5.5V 16 bytes I MC, MS, P, OT, SN, MN, ST 25LC010A 2.5V-5.5V 16 bytes I, E MC, MS, P, OT, SN, MN, ST Features Description • Maximum Clock: 10 MHz • Low-Power CMOS Technology: - Maximum Write current: 5 mA at 5.5V - Read current: 5 mA at 5.5V, 10 MHz - Standby current: 5 µA at 5.5V • 128 x 8-bit Organization • 16-Byte Page • Sequential Read • Self-Timed Erase and Write Cycles (5 ms maximum) • Block Write Protection: - Protect none, 1/4, 1/2 or all of array • Built-In Write Protection: - Power-on/off data protection circuitry - Write enable latch - Write-protect pin • High Reliability: - Endurance: 1M erase/write cycles - Data retention: > 200 years - ESD protection: > 4000V • Temperature Ranges Supported: - Industrial (I): -40C to +85C - Extended (E): -40C to +125C • RoHS Compliant • Automotive AEC-Q100 Qualified The Microchip Technology Inc. 25XX010A(1) is a 1-Kbit Serial Electrically Erasable PROM (EEPROM). The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Packages 8-Lead DFN, 8-Lead MSOP, 8-Lead PDIP, 8-Lead SOIC, 6-Lead SOT-23, 8-Lead TDFN and 8-Lead TSSOP Pin Function Table Name Function CS Chip Select Input SO Serial Data Output WP Write-Protect Pin VSS Ground SI Serial Data Input SCK Serial Clock Input HOLD Hold Input VCC Supply Voltage  2003-2022 Microchip Technology Inc. and its subsidiaries Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. Note 1: 25XX010A is used in this document as a generic part number for the 25AA010A and 25LC010A devices. Package Types (not to scale) DFN/TDFN (Top View) CS SO WP VSS 1 2 3 4 8 7 6 5 VCC HOLD SCK SI CS SO WP VSS MSOP/TSSOP (Top View) 8 1 7 2 6 3 5 4 PDIP/SOIC (Top View) CS SO WP VSS 1 2 3 4 8 7 6 5 VCC HOLD SCK SI VCC HOLD SCK SI SOT-23 (Top View) SCK 1 6 VDD VSS SI 2 3 5 4 CS SO DS20001832J-page 1 25AA010A/25LC010A 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings(†) VCC .............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65°C to +150°C Ambient temperature under bias .............................................................................................................-40°C to +125°C ESD protection on all pins ..........................................................................................................................................4 kV † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics: Industrial (I): TA = -40°C to +85°C Extended (E): TA = -40°C to +125°C DC CHARACTERISTICS Param. Symbol No. Characteristic D001 VIH1 D002 VIL1 D003 VIL2 D004 VOL D005 VOL D006 VOH High-Level Output Voltage D007 ILI D008 D009 D010 High-Level Input Voltage Low-Level Input Voltage D012 Note 1: Min. Max. Units Test Conditions 0.7 VCC VCC+1 V -0.3 0.3 VCC V VCC2.7V (Note 1) -0.3 0.2 VCC V VCC < 2.7V (Note 1) — 0.4 V IOL = 2.1 mA — 0.2 V IOL = 1.0 mA, VCC < 2.5V VCC -0.5 — V IOH = -400 µA Input Leakage Current — ±1 µA CS = VCC, VIN = VSS or VCC ILO Output Leakage Current — ±1 µA CS = VCC, VOUT = VSS or VCC CINT Internal Capacitance (all inputs and outputs) — 7 pF TA = +25°C, CLK = 1.0 MHz, VCC = 5.0V (Note 1) — 5 mA VCC = 5.5V; FCLK = 10.0 MHz; SO = Open — 2.5 mA VCC = 2.5V; FCLK = 5.0 MHz; SO = Open — 5 mA VCC = 5.5V — 3 mA VCC = 2.5V — 5 µA CS = VCC = 5.5V, Inputs tied to VCC or VSS, TA = +125°C — 1 µA CS = VCC = 2.5V, Inputs tied to VCC or VSS, TA = +85°C Low-Level Output Voltage ICC Read Operating Current D011 VCC = 1.8V to 5.5V VCC = 2.5V to 5.5V ICC Write ICCS Standby Current This parameter is periodically sampled and not 100% tested. DS20001832J-page 2  2003-2022 Microchip Technology Inc. and its subsidiaries 25AA010A/25LC010A TABLE 1-2: AC CHARACTERISTICS Electrical Characteristics: Industrial (I): TA = -40°C to +85°C VCC = 1.8V to 5.5V Extended (E): TA = -40°C to +125°C VCC = 2.5V to 5.5V AC CHARACTERISTICS Param. Symbol No. 1 FCLK 2 TCSS 3 TCSH 4 TCSD 5 TSU Characteristic Clock Frequency CS Setup Time CS Hold Time CS Disable Time Data Setup Time 6 THD Data Hold Time 7 TR CLK Rise Time 8 TF CLK Fall Time 9 THI Clock High Time Min. Max. Units Test Conditions — 10 MHz 4.5V VCC  5.5V — 5 MHz 2.5V VCC  4.5V — 3 MHz 1.8V VCC  2.5V 50 — ns 4.5V VCC  5.5V 100 — ns 2.5V VCC  4.5V 150 — ns 1.8V VCC  2.5V 100 — ns 4.5V VCC  5.5V 200 — ns 2.5V VCC  4.5V 250 — ns 1.8V VCC  2.5V 50 — ns 10 — ns 4.5V VCC  5.5V 20 — ns 2.5V VCC  4.5V 30 — ns 1.8V VCC  2.5V 20 — ns 4.5V VCC  5.5V 40 — ns 2.5V VCC  4.5V 50 — ns 1.8V VCC  2.5V — 100 ns Note 1 — 100 ns Note 1 50 — ns 4.5V VCC  5.5V 100 — ns 2.5V VCC  4.5V 150 — ns 1.8V VCC  2.5V 50 — ns 4.5V VCC  5.5V 100 — ns 2.5V VCC  4.5V 1.8V VCC  2.5V 10 TLO Clock Low Time 150 — ns 11 TCLD Clock Delay Time 50 — ns 12 TCLE Clock Enable Time 50 — ns — 50 ns 4.5V VCC  5.5V — 100 ns 2.5V VCC  4.5V — 160 ns 1.8V VCC  2.5V 0 — ns Note 1 — 40 ns 4.5V VCC  5.5V (Note 1) 13 TV 14 THO 15 TDIS 16 THS Note 1: 2: 3: Output Valid from Clock Low Output Hold Time Output Disable Time HOLD Setup Time — 80 ns 2.5V VCC  4.5V (Note 1) — 160 ns 1.8V VCC  2.5V (Note 1) 20 — ns 4.5V VCC  5.5V 40 — ns 2.5V VCC  4.5V 80 — ns 1.8V VCC  2.5V This parameter is periodically sampled and not 100% tested. TWC begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle is complete. This parameter is not tested but ensured by characterization.  2003-2022 Microchip Technology Inc. and its subsidiaries DS20001832J-page 3 25AA010A/25LC010A TABLE 1-2: AC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Industrial (I): TA = -40°C to +85°C VCC = 1.8V to 5.5V Extended (E): TA = -40°C to +125°C VCC = 2.5V to 5.5V AC CHARACTERISTICS Param. Symbol No. 17 THH 18 HOLD Hold Time HOLD Low to Output High-Z THZ 19 TWC 21 Note 1: 2: 3: Min. Max. Units Test Conditions 20 — ns 4.5V VCC  5.5V 40 — ns 2.5V VCC  4.5V 80 — ns 1.8V VCC  2.5V — 30 ns 4.5V VCC  5.5V (Note 1) — 60 ns 2.5V VCC  4.5V (Note 1) — 160 ns 1.8V VCC  2.5V (Note 1) — 30 ns 4.5V VCC  5.5V — 60 ns 2.5V VCC  4.5V — 160 ns 1.8V VCC  2.5V Internal Write Cycle Time (byte or page) — 5 ms Note 2 Endurance 1M — HOLD High to Output Valid THV 20 Characteristic E/W +25°C, VCC = 5.5V, Page Mode Cycles (Note 3) This parameter is periodically sampled and not 100% tested. TWC begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle is complete. This parameter is not tested but ensured by characterization. TABLE 1-3: AC TEST CONDITIONS AC Waveform VLO = 0.2V — VH I = VCC - 0.2V Note 1 VH I = 4.0V Note 2 CL = 100 pF — Timing Measurement Reference Level Input 0.5 VCC Output Note 1: 2: 0.5 VCC For VCC  4.0V For VCC  4.0V DS20001832J-page 4  2003-2022 Microchip Technology Inc. and its subsidiaries 25AA010A/25LC010A FIGURE 1-1: HOLD TIMING CS 17 16 17 16 SCK 18 SO n+2 SI n+2 n+1 n 19 High-Impedance n 5 Don’t Care n+1 n-1 n n n-1 HOLD FIGURE 1-2: SERIAL INPUT TIMING 4 CS 2 7 Mode 1,1 3 8 12 11 SCK Mode 0,0 5 SI 6 MSb in LSb in High-Impedance SO FIGURE 1-3: SERIAL OUTPUT TIMING CS 9 3 10 Mode 1,1 SCK Mode 0,0 13 SO SI 14 MSb out 15 LSb out Don’t Care  2003-2022 Microchip Technology Inc. and its subsidiaries DS20001832J-page 5 25AA010A/25LC010A 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: Name PIN FUNCTION TABLE DFN(1) MSOP PDIP SOIC SOT-23 TDFN(1) TSSOP Function CS 1 1 1 1 5 1 1 Chip Select Input SO 2 2 2 2 4 2 2 Serial Data Output WP 3 3 3 3 — 3 3 Write-Protect Pin Vss 4 4 4 4 2 4 4 Ground SI 5 5 5 5 3 5 5 Serial Data Input SCK 6 6 6 6 1 6 6 Serial Clock Input HOLD 7 7 7 7 — 7 7 Hold Input Vcc 8 8 8 8 6 8 8 Supply Voltage Note 1: 2.1 The exposed pad on the DFN/TDFN packages can be connected to VSS or left floating. Chip Select (CS) A low level on this pin selects the device. A high level deselects the device and forces it into Standby mode. However, a programming cycle which is already initiated or in progress will be completed, regardless of the CS input signal. If CS is brought high during a program cycle, the device will go into Standby mode as soon as the programming cycle is complete. When the device is deselected, SO goes to the high-impedance state, allowing multiple parts to share the same SPI bus. A low-to-high transition on CS after a valid write sequence initiates an internal write cycle. After power-up, a low level on CS is required prior to any sequence being initiated. 2.2 Serial Output (SO) The SO pin is used to transfer data out of the 25XX010A. During a read cycle, data are shifted out on this pin after the falling edge of the serial clock. 2.3 Write-Protect (WP) The WP pin is a hardware write-protect input pin. When it is low, all writes to the array or STATUS register are disabled, but any other operations function normally. When WP is high, all functions, including nonvolatile writes, operate normally. At any time, when WP is low, the write enable latch will be reset and programming will be inhibited. However, if a write cycle is already in progress, WP going low will not change or disable the write cycle. See Table 3-4 for the Write-Protect Functionality Matrix. 2.4 2.5 Serial Clock (SCK) The SCK is used to synchronize the communication between a host and the 25XX010A. Instructions, addresses or data present on the SI pin are latched on the rising edge of the clock input, while data on the SO pin are updated after the falling edge of the clock input. 2.6 Hold (HOLD) The HOLD pin is used to suspend transmission to the 25XX010A while in the middle of a serial sequence without having to retransmit the entire sequence again. It must be held high any time this function is not being used. Once the device is selected and a serial sequence is underway, the HOLD pin may be pulled low to pause further serial communication without resetting the serial sequence. The HOLD pin must be brought low while SCK is low, otherwise the HOLD function will not be invoked until the next SCK high-to-low transition. The 25XX010A must remain selected during this sequence. The SI and SCK levels are “don’t cares” during the time the device is paused and transitions on these pins will be ignored. To resume serial communication, HOLD must be brought high while the SCK pin is low, otherwise serial communication will not be resumed until the next SCK high-to-low transition. The SO line will tri-state immediately upon a high-to-low transition of the HOLD pin and will begin outputting again immediately upon a subsequent low-to-high transition of the HOLD pin, independent of the state of SCK. Serial Input (SI) The SI pin is used to transfer data into the device. It receives instructions, addresses and data. Data are latched on the rising edge of the serial clock. DS20001832J-page 6  2003-2022 Microchip Technology Inc. and its subsidiaries 25AA010A/25LC010A 3.0 FUNCTIONAL DESCRIPTION 3.1 Principles of Operation BLOCK DIAGRAM STATUS Register The 25XX010A is a 128-byte Serial EEPROM designed to interface directly with the Serial Peripheral Interface (SPI) port of many of today’s popular microcontroller families, including Microchip’s PIC® microcontrollers. It may also interface with microcontrollers that do not have a built-in SPI port by using discrete I/O lines programmed properly in firmware to match the SPI protocol. The 25XX010A contains an 8-bit instruction register. The device is accessed via the SI pin, with data being clocked in on the rising edge of SCK. The CS pin must be low and the HOLD pin must be high for the entire operation. Table 3-1 contains a list of the possible instruction bytes and format for device operation. All instructions, addresses and data are transferred Most Significant bit (MSb) first, Least Significant bit (LSb) last. I/O Control Logic Memory Control Logic Dec SI SO Y Decoder CS SCK Sense Amp. R/W Control HOLD WP VCC VSS INSTRUCTION SET Instruction Name Instruction Format x011(1) Description Read data from memory array beginning at selected address READ 0000 WRITE 0000 x010(1) WRDI 0000 x100(1) WREN 0000 x110(1) Set the write enable latch (enable write operations) RDSR 0000 x101(1) Read STATUS register WRSR x001(1) Write STATUS register Note 1: EEPROM Array X Page Latches Data (SI) are sampled on the first rising edge of SCK after CS goes low. If the clock line is shared with other peripheral devices on the SPI bus, the user can assert the HOLD input and place the 25XX010A in ‘HOLD’ mode. After releasing the HOLD pin, operation will resume from the point when the HOLD was asserted. TABLE 3-1: HV Generator 0000 Write data to memory array beginning at selected address Reset the write enable latch (disable write operations) x = Don’t care  2003-2022 Microchip Technology Inc. and its subsidiaries DS20001832J-page 7 25AA010A/25LC010A 3.2 Read Sequence The device is selected by pulling CS low. The 8-bit READ instruction is transmitted to the 25XX010A followed by an 8-bit address. See Figure 3-1 for more details. After the correct READ instruction and address are sent, the data stored in the memory at the selected address are shifted out on the SO pin. Data stored in the memory at the next address can be read sequentially by continuing to provide clock pulses to the client. The internal Address Pointer automatically increments to the next higher address after each byte of data is shifted out. When the highest address is reached (7Fh), the address counter rolls over to address 00h allowing the read cycle to be continued indefinitely. The read operation is terminated by raising the CS pin (Figure 3-1). FIGURE 3-1: READ SEQUENCE CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCK Instruction SI 0 0 0 0 0 Address Byte 0 1 1 X A6 A5 A4 A3 A2 A1 A0 Data Out High-Impedance SO DS20001832J-page 8 7 6 5 4 3 2 1 0  2003-2022 Microchip Technology Inc. and its subsidiaries 25AA010A/25LC010A 3.3 Write Sequence Note: Prior to any attempt to write data to the 25XX010A, the write enable latch must be set by issuing the WREN instruction (Figure 3-4). This is done by setting CS low and then clocking out the proper instruction into the 25XX010A. After all eight bits of the instruction are transmitted, CS must be driven high to set the write enable latch. If the write operation is initiated immediately after the WREN instruction without CS driven high, the data will not be written to the array because the write enable latch will not have been properly set. After setting the write enable latch, the user may proceed by driving CS low, issuing a WRITE instruction, followed by the remainder of the address and then the data to be written. Up to 16 bytes of data can be sent to the device before a write cycle is necessary. The only restriction is that all of the bytes must reside in the same page. Additionally, a page address begins with XXXX 0000 and ends with XXXX 1111. If the internal address counter reaches XXXX 1111 and clock signals continue to be applied to the chip, the address counter will roll back to the first address of the page and overwrite any data that previously existed in those locations. FIGURE 3-2: Page write operations are limited to writing bytes within a single physical page, regardless of the number of bytes actually being written. Physical page boundaries start at addresses that are integer multiples of the page buffer size (or ‘page size’) and end at addresses that are integer multiples of page size – 1. If a Page Write command attempts to write across a physical page boundary, the result is that the data wrap around to the beginning of the current page (overwriting data previously stored there), instead of being written to the next page as might be expected. It is therefore necessary for the application software to prevent page write operations that would attempt to cross a page boundary. For the data to be actually written to the array, the CS must be brought high after the Least Significant bit (D0) of the nth data byte has been clocked in. If CS is driven high at any other time, the write operation will not be completed. Refer to Figure 3-2 and Figure 3-3 for more detailed illustrations on the byte write sequence and the page write sequence, respectively. While the write is in progress, the STATUS register may be read to check the status of the WIP, WEL, BP1 and BP0 bits (Figure 3-6). Attempting to read a memory array location will not be possible during a write cycle. Polling the WIP bit in the STATUS register is recommended in order to determine if a write cycle is in progress. When the write cycle is completed, the write enable latch is reset. BYTE WRITE SEQUENCE CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Twc(1) SCK Instruction SI 0 0 0 0 0 0 Address Byte 1 0 X A6 A5 A4 A3 A2 A1 A0 Data Byte 7 6 5 4 3 2 1 0 High-Impedance SO Note 1: This sequence initiates a self-timed internal write cycle on the rising edge of CS after a valid sequence.  2003-2022 Microchip Technology Inc. and its subsidiaries DS20001832J-page 9 25AA010A/25LC010A FIGURE 3-3: PAGE WRITE SEQUENCE CS 0 1 2 0 0 0 3 4 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 6 7 8 0 1 0 X A6 A5 A4 A3 A2 A1 A0 7 5 SCK Address Byte Instruction SI 0 0 Data Byte 1 6 5 4 3 2 1 0 CS (1) TWC 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 SCK Data Byte 2 SI 7 6 5 4 3 2 Data Byte 3 1 0 7 6 5 4 3 2 Data Byte n (16 max) 1 0 7 6 5 4 3 2 1 0 Note 1: This sequence initiates a self-timed internal write cycle on the rising edge of CS after a valid sequence. DS20001832J-page 10  2003-2022 Microchip Technology Inc. and its subsidiaries 25AA010A/25LC010A 3.4 Write Enable (WREN) and Write Disable (WRDI) The following is a list of conditions under which the write enable latch will be reset: • • • • • The 25XX010A contains a write enable latch. See Table 3-4 for the Write-Protect Functionality Matrix. This latch must be set before any write operation will be completed internally. The WREN instruction will set the latch and the WRDI will reset the latch. FIGURE 3-4: Power-up WRDI instruction successfully executed WRSR instruction successfully executed WRITE instruction successfully executed WP pin is brought low WRITE ENABLE SEQUENCE (WREN) CS 0 1 2 3 4 5 6 7 SCK 0 SI 0 0 0 1 1 0 High-Impedance SO FIGURE 3-5: 0 WRITE DISABLE SEQUENCE (WRDI) CS 0 1 2 3 4 5 6 7 SCK SI 0 0 0 0 0 1 0 0 High-Impedance SO  2003-2022 Microchip Technology Inc. and its subsidiaries DS20001832J-page 11 25AA010A/25LC010A 3.5 Read Status Register Instruction (RDSR) The Write Enable Latch (WEL) bit indicates the status of the write enable latch and is read-only. When set to a ‘1’, the latch allows writes to the array, when set to a ‘0’, the latch prohibits writes to the array. The state of this bit can always be updated via the WREN or WRDI commands regardless of the state of write protection on the STATUS register. These commands are shown in Figure 3-4 and Figure 3-5. The Read Status Register instruction (RDSR) provides access to the STATUS register. See Figure 3-6 for the RDSR timing sequence. The STATUS register may be read at any time, even during a write cycle. The STATUS register is formatted as follows: TABLE 3-2: The Block Protection (BP0 and BP1) bits indicate which blocks are currently write-protected. These bits are set by the user issuing the WRSR instruction (see Figure 3-7). These bits are nonvolatile and are described in more detail in Table 3-3. STATUS REGISTER 7 6 5 4 3 2 1 0 – – – – W/R W/R R R X X X BP1 BP0 WEL WIP X Note 1: See Figure 3-6 for the RDSR timing sequence. W/R = writable/readable. R = read-only. The Write-In-Process (WIP) bit indicates whether the 25XX010A is busy with a write operation. When set to a ‘1’, a write is in progress, when set to a ‘0’, no write is in progress. This bit is read-only. FIGURE 3-6: READ STATUS REGISTER TIMING SEQUENCE (RDSR) CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 1 0 SCK Instruction SI 0 0 0 0 0 High-Impedance SO DS20001832J-page 12 1 0 1 Data from STATUS Register 7 6 5 4 3 2  2003-2022 Microchip Technology Inc. and its subsidiaries 25AA010A/25LC010A 3.6 Write Status Register Instruction (WRSR) TABLE 3-3: The Write Status Register instruction (WRSR) allows the user to write to the nonvolatile bits in the STATUS register as shown in Table 3-2. Four levels of protection for the array are selectable by writing to the appropriate bits in the STATUS register. The user has the ability to write-protect none, one, two or all four of the segments of the array as shown in Table 3-3. See Figure 3-7 for the WRSR timing sequence. TABLE 3-4: ARRAY PROTECTION BP1 BP0 Array Addresses Write-Protected 0 0 none 0 1 upper 1/4 (60h-7Fh) 1 0 upper 1/2 (40h-7Fh) 1 1 all (00h-7Fh) WRITE-PROTECT FUNCTIONALITY MATRIX WP (pin 3) WEL (SR bit 1) Protected Blocks Unprotected Blocks STATUS Register 0 (low) x Protected Protected Protected 1 (high) 0 Protected Protected Protected 1 (high) 1 Protected Writable Writable Note 1: x = Don’t care FIGURE 3-7: WRITE STATUS REGISTER TIMING SEQUENCE (WRSR) CS (1) TWC 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 1 0 SCK Instruction SI 0 0 0 0 Data to STATUS register 0 0 0 1 7 6 5 4 3 2 High-Impedance SO Note 1: This sequence initiates a self-timed internal write cycle on the rising edge of CS after a valid sequence.  2003-2022 Microchip Technology Inc. and its subsidiaries DS20001832J-page 13 25AA010A/25LC010A 4.0 DATA PROTECTION The following protection has been implemented to prevent inadvertent writes to the array: • The write enable latch is reset on power-up • A write enable instruction must be issued to set the write enable latch • After a byte write, page write or STATUS register write, the write enable latch is reset • CS must be set high after the proper number of clock cycles to start an internal write cycle • Access to the array during an internal write cycle is ignored and programming is continued 5.0 POWER-ON STATE The 25XX010A powers on in the following state: • The device is in low-power Standby mode (CS = 1) • The write enable latch is reset • SO is in high-impedance state • A high-to-low-level transition on CS is required to enter active state DS20001832J-page 14  2003-2022 Microchip Technology Inc. and its subsidiaries 25AA010A/25LC010A 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 8-Lead 2X3 DFN XXX YWW NN 8-Lead MSOP (150 mil) XXXXXXT YWWNNN 8-Lead PDIP (300 mil) XXXXXXX T/XXXNNN YYWW Example 401 202 13 Example 5L1AI 20213F Example 25AA010A I/P e3 13F 2202 8-Lead SOIC Example XXXXXXXT XXXXYYWW NNN 25AA01AI SN e3 2202 13F 6-Lead SOT-23 Example XXNN 1213 8-Lead 2x3 TDFN Example XXX YWW NN C04 202 13 8-Lead TSSOP Example XXXX TYWW NNN  2003-2022 Microchip Technology Inc. and its subsidiaries 5A1A I202 13F DS20001832J-page 15 25AA010A/25LC010A 1st Line Marking Codes Part Number DFN I-Temp. E-Temp. MSOP SOT-23 I-Temp. TDFN E-Temp. I-Temp. TSSOP E-Temp. Standard 25AA010A 401 — 5A1AT 12NN — C01 — 5A1A 25LC010A 404 405 5L1AT 15NN 16NN C04 C05 5L1A Legend: XX...X T Y YY WW NNN e3 Part number or part number code Temperature (I, E) Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code (2 characters for small packages) RoHS-compliant JEDEC® designator for Matte Tin (Sn) Note: For very small packages with no room for the RoHS-compliant JEDEC® designator e3 , the marking will only appear on the outer carton or reel label. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. DS20001832J-page 16  2003-2022 Microchip Technology Inc. and its subsidiaries 25AA010A/25LC010A /HDG3ODVWLF'XDO)ODW1R/HDG3DFNDJH0&[[PP%RG\>')1@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ ' $ % 1 '$780$ '$780% ( 127( ;  &  ;  &  7239,(:  & & $ $ 6($7,1* 3/$1( ; $  & 6,'(9,(: '  127(  & $ %   & $ % ( . / 1 ;E H %277209,(:   & $ % & 0LFURFKLS7HFKQRORJ\'UDZLQJ&5HY(6KHHWRI  2003-2022 Microchip Technology Inc. and its subsidiaries DS20001832J-page 17 25AA010A/25LC010A /HDG3ODVWLF'XDO)ODW1R/HDG3DFNDJH0&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‘9 &