25LC160DT-E/SN16KVAO 数据手册
25AA160C/D, 25LC160C/D
16K SPI Bus Serial EEPROM
Device Selection Table
Part Number
VCC Range
Page Size
Temp. Ranges
Packages
25LC160C
2.5-5.5V
16 Byte
I,E
P, SN, ST, MS, MN
25AA160C
1.8-5.5V
16 Byte
I
P, SN, ST, MS, MN
25LC160D
2.5-5.5V
32 Byte
I,E
P, SN, ST, MS, MN
25AA160D
1.8-5.5V
32 Byte
I, E
P, SN, ST, MS, MN
Features:
Description:
• Max. Clock 10 MHz
• Low-Power CMOS Technology:
- Max. write current: 5 mA at 5.5V
- Read current: 5 mA at 5.5V, 10 MHz
- Standby current: 5 uA at 5.5V
• 2048 x 8-bit Organization
• 16-Byte Page (‘C’ version devices)
• 32-Byte Page (‘D’ version devices)
• Self-Timed Erase and Write Cycles (5 ms max.)
• Block Write Protection:
- Protect none, 1/4, 1/2 or all of array
• Built-In Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential Read
• High Reliability:
- Endurance: > 1M erase/write cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• Temperature Ranges Supported:
- Industrial (I):
-40C to +85C
- Automotive (E):
-40°C to +125°C
The Microchip Technology Inc. 25AA160C/D,
25LC160C/D (25XX160C/D*) are 16 Kbit Serial
Electrically Erasable PROMs. The memory is accessed
via a simple Serial Peripheral Interface (SPI)
compatible serial bus. The bus signals required are a
clock input (SCK) plus separate data in (SI) and data
out (SO) lines. Access to the device is controlled
through a Chip Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
interrupts.
The 25XX160C/D is available in standard packages
including 8-lead PDIP and SOIC, and advanced
packaging including 8-lead MSOP, TSSOP, and 2x3
TDFN. All packages are Pb-free and RoHS compliant.
Package Types (not to scale)
PDIP/SOIC
TSSOP/MSOP
(P, SN)
(ST, MS)
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
• Pb-Free and RoHS Compliant
CS
SO
1
2
8
7
VCC
HOLD
WP
3
6
SCK
VSS
4
5
SI
TDFN
(MN)
CS 1
8
VCC
SO 2
7
HOLD
WP 3
6
SCK
VSS 4
5
SI
*25XX160C/D is used in this document as a generic part
number for the 25AA160C/D, 25LC160C/D devices.
2009-2013 Microchip Technology Inc.
DS22150B-page 1
25XX160C/D
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(†)
VCC .............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. VSS .......................................................................................................... -0.6V to VCC+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
DC CHARACTERISTICS
Param.
No.
Sym.
Characteristic
TA = -40°C to +85°C
TA = -40°C to +125°C
Industrial (I):
Automotive (E):
Min.
Max.
Units
VCC = 1.8V to 5.5V
VCC = 1.8V to 5.5V
Test Conditions
D001
VIH1
High-level input
voltage
0.7 VCC
VCC+1
V
—
D002
VIL1
-0.3
0.3 VCC
V
VCC2.7V
D003
VIL2
Low-level input
voltage
D004
VOL1
-0.3
0.2 VCC
V
VCC < 2.7V
Low-level output
voltage
—
0.4
V
IOL = 2.1 mA
—
0.2
V
IOL = 1.0 mA, VCC < 2.5V
VCC-0.5
—
V
IOH = -400 A
D005
VOL2
D006
VOH
High-level output
voltage
D007
ILI
Input leakage current
—
±1
A
CS = VCC, VIN = VSS OR VCC
D008
ILO
Output leakage
current
—
±1
A
CS = VCC, VOUT = VSS OR VCC
D009
CINT
Internal Capacitance
(all inputs and
outputs)
—
7
pF
TA = 25°C, CLK = 1.0 MHz,
VCC = 5.0V (Note)
D010
ICC Read
—
5
mA
—
2.5
mA
VCC = 5.5V; FCLK = 10.0 MHz;
SO = Open
VCC = 2.5V; FCLK = 5.0 MHz;
SO = Open
—
—
5
3
mA
mA
VCC = 5.5V
VCC = 2.5V
—
5
A
—
1
A
CS = VCC = 5.5V, Inputs tied to VCC or
VSS, +125°C
CS = VCC = 5.5V, Inputs tied to VCC or
VSS, +85°C
Operating Current
D011
ICC Write
D012
ICCS
Standby Current
Note:
This parameter is periodically sampled and not 100% tested.
DS22150B-page 2
2009-2013 Microchip Technology Inc.
25XX160C/D
TABLE 1-2:
AC CHARACTERISTICS
AC CHARACTERISTICS
Param.
Sym.
No.
Characteristic
Industrial (I):
TA = -40°C to +85°C
Automotive (E): TA = -40°C to +125°C
VCC = 1.8V to 5.5V
VCC = 1.8V to 5.5V
Min.
Max.
Units
Test Conditions
—
—
—
10
5
3
MHz
MHz
MHz
4.5V VCC 5.5V
2.5V VCC 4.5V
1.8V VCC 2.5V
1
FCLK
Clock Frequency
2
TCSS
CS Setup Time
50
100
150
—
—
—
ns
ns
ns
4.5V VCC 5.5V
2.5V VCC 4.5V
1.8V VCC 2.5V
3
TCSH
CS Hold Time
100
200
250
—
—
—
ns
ns
ns
4.5V VCC 5.5V
2.5V VCC 4.5V
1.8V VCC 2.5V
4
TCSD
CS Disable Time
50
—
ns
—
5
Tsu
Data Setup Time
10
20
30
—
—
—
ns
ns
ns
4.5V VCC 5.5V
2.5V VCC 4.5V
1.8V VCC 2.5V
6
THD
Data Hold Time
20
40
50
—
—
—
ns
ns
ns
4.5V VCC 5.5V
2.5V VCC 4.5V
1.8V VCC 2.5V
7
TR
CLK Rise Time
—
2
µs
(Note 1)
8
TF
CLK Fall Time
—
2
µs
(Note 1)
9
THI
Clock High Time
50
100
150
—
—
—
ns
ns
ns
4.5V VCC 5.5V
2.5V VCC 4.5V
1.8V VCC 2.5V
10
TLO
Clock Low Time
50
100
150
—
—
—
ns
ns
ns
4.5V VCC 5.5V
2.5V VCC 4.5V
1.8V VCC 2.5V
11
TCLD
Clock Delay Time
50
—
ns
—
12
TCLE
Clock Enable Time
50
—
ns
—
13
TV
Output Valid from Clock
Low
—
—
—
50
100
160
ns
ns
ns
4.5V VCC 5.5V
2.5V VCC 4.5V
1.8V VCC 2.5V
14
THO
Output Hold Time
0
—
ns
(Note 1)
15
TDIS
Output Disable Time
—
—
—
40
80
160
ns
ns
ns
4.5V VCC 5.5V (Note 1)
2.5V VCC 4.5V (Note 1)
1.8V VCC 2.5V (Note 1)
16
THS
HOLD Setup Time
20
40
80
—
—
—
ns
ns
ns
4.5V VCC 5.5V
2.5V VCC 4.5V
1.8V VCC 2.5V
Note 1: This parameter is periodically sampled and not 100% tested.
2: TWC begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle
is complete.
3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from our web site:
www.microchip.com.
2009-2013 Microchip Technology Inc.
DS22150B-page 3
25XX160C/D
TABLE 1-2:
AC CHARACTERISTICS (CONTINUED)
Industrial (I):
TA = -40°C to +85°C
Automotive (E): TA = -40°C to +125°C
AC CHARACTERISTICS
Param.
Sym.
No.
Characteristic
Min.
Max.
Units
VCC = 1.8V to 5.5V
VCC = 1.8V to 5.5V
Test Conditions
17
THH
HOLD Hold Time
20
40
80
—
—
—
ns
ns
ns
4.5V VCC 5.5V
2.5V VCC 4.5V
1.8V VCC 2.5V
18
THZ
HOLD Low to Output
High-Z
30
60
160
—
—
—
ns
ns
ns
4.5V VCC 5.5V (Note 1)
2.5V VCC 4.5V (Note 1)
1.8V VCC 2.5V (Note 1)
19
THV
HOLD High to Output
Valid
30
60
160
—
—
—
ns
ns
ns
4.5V VCC 5.5V
2.5V VCC 4.5V
1.8V VCC 2.5V
ms
(Note 2)
20
TWC
Internal Write Cycle Time
—
5
21
—
Endurance
1M
—
E/W 25°C, VCC = 5.5V (Note 3)
Cycles
Note 1: This parameter is periodically sampled and not 100% tested.
2: TWC begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle
is complete.
3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from our web site:
www.microchip.com.
TABLE 1-3:
AC TEST CONDITIONS
AC Waveform:
VLO = 0.2V
—
VHI = VCC - 0.2V
(Note 1)
VHI = 4.0V
(Note 2)
CL = 50 pF
—
Timing Measurement Reference Level
Input
0.5 VCC
Output
0.5 VCC
Note 1: For VCC 4.0V
2: For VCC > 4.0V
DS22150B-page 4
2009-2013 Microchip Technology Inc.
25XX160C/D
FIGURE 1-1:
HOLD TIMING
CS
17
16
17
16
SCK
18
SO
n+2
SI
n+2
n+1
n
19
High-Impedance
n
5
Don’t Care
n+1
n-1
n
n
n-1
HOLD
FIGURE 1-2:
SERIAL INPUT TIMING
4
CS
2
7
Mode 1,1
8
3
12
11
SCK Mode 0,0
5
SI
6
MSB in
LSB in
High-Impedance
SO
FIGURE 1-3:
SERIAL OUTPUT TIMING
CS
9
3
10
Mode 1,1
SCK
Mode 0,0
13
SO
14
MSB out
SI
2009-2013 Microchip Technology Inc.
15
ISB out
Don’t Care
DS22150B-page 5
25XX160C/D
2.0
FUNCTIONAL DESCRIPTION
2.1
Principles of Operation
The 25XX160C/D are 2048 byte Serial EEPROMs
designed to interface directly with the Serial Peripheral
Interface (SPI) port of many of today’s popular
microcontroller families, including Microchip’s PIC®
microcontrollers. It may also interface with microcontrollers that do not have a built-in SPI port by using
discrete I/O lines programmed properly with the
software.
The 25XX160C/D contains an 8-bit instruction register.
The device is accessed via the SI pin, with data being
clocked in on the rising edge of SCK. The CS pin must
be low and the HOLD pin must be high for the entire
operation.
Table 2-1 contains a list of the possible instruction
bytes and format for device operation. All instructions,
addresses, and data are transferred MSB first, LSB
last.
Data (SI) is sampled on the first rising edge of SCK
after CS goes low. If the clock line is shared with other
peripheral devices on the SPI bus, the user can assert
the HOLD input and place the 25XX160C/D in ‘HOLD’
mode. After releasing the HOLD pin, operation will
resume from the point when the HOLD was asserted.
2.2
Read Sequence
The device is selected by pulling CS low. The 8-bit
READ instruction is transmitted to the 25XX160C/D followed by the 16-bit address, with the five MSBs of the
address being “don’t care” bits. After the correct READ
instruction and address are sent, the data stored in the
memory at the selected address is shifted out on the
SO pin. The data stored in the memory at the next
address can be read sequentially by continuing to
provide clock pulses. The internal Address Pointer is
automatically incremented to the next higher address
after each byte of data is shifted out. When the highest
address is reached (07FFh), the address counter rolls
over to address 0000h allowing the read cycle to be
continued indefinitely. The read operation is terminated
by raising the CS pin (Figure 2-1).
DS22150B-page 6
2.3
Write Sequence
Prior to any attempt to write data to the 25XX160C/D,
the write enable latch must be set by issuing the WREN
instruction (Figure 2-4). This is done by setting CS low
and then clocking out the proper instruction into the
25XX160C/D. After all eight bits of the instruction are
transmitted, the CS must be brought high to set the
write enable latch. If the write operation is initiated
immediately after the WREN instruction without CS
being brought high, the data will not be written to the
array because the write enable latch will not have been
properly set.
Once the write enable latch is set, the user may
proceed by setting the CS low, issuing a WRITE
instruction, followed by the 16-bit address, with the five
MSBs of the address being “don’t care” bits, and then
the data to be written. Up to 16 bytes (25XX160C) or 32
bytes (25XX160D) of data can be sent to the device
before a write cycle is necessary. The only restriction is
that all of the bytes must reside in the same page.
Note:
Page write operations are limited to
writing bytes within a single physical page,
regardless of the number of bytes
actually being written. Physical page
boundaries start at addresses that are
integer multiples of the page buffer size
(or ‘page size’) and, end at addresses that
are integer multiples of page size – 1. If a
Page Write command attempts to write
across a physical page boundary, the
result is that the data wraps around to the
beginning of the current page (overwriting
data previously stored there), instead of
being written to the next page as might be
expected. It is therefore necessary for the
application software to prevent page write
operations that would attempt to cross a
page boundary.
For the data to be actually written to the array, the CS
must be brought high after the Least Significant bit (D0)
of the nth data byte has been clocked in. If CS is
brought high at any other time, the write operation will
not be completed. Refer to Figure 2-2 and Figure 2-3
for more detailed illustrations on the byte write
sequence and the page write sequence, respectively.
While the write is in progress, the STATUS register may
be read to check the status of the WPEN, WIP, WEL,
BP1 and BP0 bits (Figure 2-6). A read attempt of a
memory array location will not be possible during a
write cycle. When the write cycle is completed, the
write enable latch is reset.
2009-2013 Microchip Technology Inc.
25XX160C/D
Block Diagram
STATUS
Register
HV Generator
Memory
Control
Logic
I/O Control
Logic
X
EEPROM
Array
Dec
Page Latches
SI
SO
Y Decoder
CS
SCK
Sense Amp.
R/W Control
HOLD
WP
VCC
VSS
TABLE 2-1:
INSTRUCTION SET
Instruction Name
Instruction Format
Description
READ
0000 0011
Read data from memory array beginning at selected address
WRITE
0000 0010
Write data to memory array beginning at selected address
WRDI
0000 0100
Reset the write enable latch (disable write operations)
WREN
0000 0110
Set the write enable latch (enable write operations)
RDSR
0000 0101
Read STATUS register
WRSR
0000 0001
Write STATUS register
FIGURE 2-1:
READ SEQUENCE
CS
0
1
2
0
0
0
3
4
5
6
7
8
9 10 11
0
1
1 15 14 13 12
21 22 23 24 25 26 27 28 29 30 31
SCK
Instruction
SI
0
0
16-bit Address
2
1
0
Data Out
High-Impedance
SO
2009-2013 Microchip Technology Inc.
7
6
5
4
3
2
1
0
DS22150B-page 7
25XX160C/D
FIGURE 2-2:
BYTE WRITE SEQUENCE
CS
Twc
0
1
2
3
4
5
6
7
8
9 10 11
21 22 23 24 25 26 27 28 29 30 31
SCK
Instruction
SI
0
0
0
0
0
16-bit Address
0
2
0 15 14 13 12
1
Data Byte
1
0
7
6
5
4
3
2
1
0
High-Impedance
SO
FIGURE 2-3:
PAGE WRITE SEQUENCE
CS
0
1
2
3
4
5
6
7
8
9 10 11
21 22 23 24 25 26 27 28 29 30 31
SCK
Instruction
SI
0
0
0
0
0
16-bit Address
0 1
Data Byte 1
2
0 15 14 13 12
1
0
7
6
5
4
3
2
1
0
CS
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCK
Data Byte 2
SI
7
DS22150B-page 8
6
5
4
3
2
Data Byte 3
1
0
7
6
5
4
3
2
Data Byte n (16/32 max)
1
0
7
6
5
4
3
2
1
0
2009-2013 Microchip Technology Inc.
25XX160C/D
2.4
Write Enable (WREN) and Write
Disable (WRDI)
The following is a list of conditions under which the
write enable latch will be reset:
•
•
•
•
The 25XX160C/D contains a write enable latch. See
Table 2-4 for the Write-Protect Functionality Matrix.
This latch must be set before any write operation will be
completed internally. The WREN instruction will set the
latch, and the WRDI will reset the latch.
FIGURE 2-4:
Power-up
WRDI instruction successfully executed
WRSR instruction successfully executed
WRITE instruction successfully executed
WRITE ENABLE SEQUENCE (WREN)
CS
0
1
2
3
4
5
6
7
SCK
0
SI
0
0
0
1
1
0
High-Impedance
SO
FIGURE 2-5:
0
WRITE DISABLE SEQUENCE (WRDI)
CS
0
1
2
3
4
5
6
7
SCK
SI
0
0
0
0
0
1
10
0
High-Impedance
SO
2009-2013 Microchip Technology Inc.
DS22150B-page 9
25XX160C/D
2.5
Read Status Register (RDSR)
Instruction
The Write Enable Latch (WEL) bit indicates the status
of the write enable latch and is read-only. When set to
a ‘1’, the latch allows writes to the array, when set to a
‘0’, the latch prohibits writes to the array. The state of
this bit can always be updated via the WREN or WRDI
commands regardless of the state of write protection
on the STATUS register. These commands are shown
in Figure 2-4 and Figure 2-5.
The Read Status Register (RDSR) instruction provides
access to the STATUS register. The STATUS register
may be read at any time, even during a write cycle. The
STATUS register is formatted as follows:
TABLE 2-2:
STATUS REGISTER
7
6 5 4
3
2
1
W/R
– – – W/R W/R
R
WPEN X X X BP1 BP0 WEL
W/R = writable/readable. R = read-only.
The Block Protection (BP0 and BP1) bits indicate
which blocks are currently write-protected. These bits
are set by the user issuing the WRSR instruction. These
bits are nonvolatile, and are shown in Table 2-3.
0
R
WIP
See Figure 2-6 for the RDSR timing sequence.
The Write-In-Process (WIP) bit indicates whether the
25XX160C/D is busy with a write operation. When set
to a ‘1’, a write is in progress, when set to a ‘0’, no write
is in progress. This bit is read-only.
FIGURE 2-6:
READ STATUS REGISTER TIMING SEQUENCE (RDSR)
CS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
1
0
SCK
Instruction
SI
0
0
0
0
0
High-Impedance
SO
DS22150B-page 10
1
0
1
Data from STATUS Register
7
6
5
4
3
2
2009-2013 Microchip Technology Inc.
25XX160C/D
2.6
Write Status Register (WRSR)
Instruction
See Figure 2-7 for the WRSR timing sequence.
TABLE 2-3:
The Write Status Register (WRSR) instruction allows the
user to write to the nonvolatile bits in the STATUS register as shown in Table 2-2. The user is able to select
one of four levels of protection for the array by writing
to the appropriate bits in the STATUS register. The
array is divided up into four segments. The user has the
ability to write-protect none, one, two or all four of the
segments of the array. The partitioning is controlled as
shown in Table 2-3.
The Write-Protect Enable (WPEN) bit is a nonvolatile
bit that is available as an enable bit for the WP pin. The
Write-Protect (WP) pin and the Write-Protect Enable
(WPEN) bit in the STATUS register control the
programmable hardware write-protect feature. Hardware write protection is enabled when WP pin is low
and the WPEN bit is high. Hardware write protection is
disabled when either the WP pin is high or the WPEN
bit is low. When the chip is hardware write-protected,
only writes to nonvolatile bits in the STATUS register
are disabled. See Table 2-4 for a matrix of functionality
on the WPEN bit.
FIGURE 2-7:
ARRAY PROTECTION
BP1
BP0
Array Addresses
Write-Protected
0
0
none
0
1
upper 1/4
(0600h-07FFh)
1
0
upper 1/2
(0400h-07FFh)
1
1
all
(0000h-07FFh)
WRITE STATUS REGISTER TIMING SEQUENCE (WRSR)
CS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
1
0
SCK
Instruction
SI
0
0
0
0
Data to STATUS Register
0
0
0
1
7
6
5
4
3
2
High-Impedance
SO
2009-2013 Microchip Technology Inc.
DS22150B-page 11
25XX160C/D
2.7
Data Protection
2.8
The following protection has been implemented to
prevent inadvertent writes to the array:
• The write enable latch is reset on power-up
• A write enable instruction must be issued to set
the write enable latch
• After a byte write, page write or STATUS register
write, the write enable latch is reset
• CS must be set high after the proper number of
clock cycles to start an internal write cycle
• Access to the array during an internal write cycle
is ignored and programming is continued
TABLE 2-4:
Power-On State
The 25XX160C/D powers on in the following state:
• The device is in low-power Standby mode
(CS = 1)
• The write enable latch is reset
• SO is in high-impedance state
• A high-to-low-level transition on CS is required to
enter active state
WRITE-PROTECT FUNCTIONALITY MATRIX
WEL
(SR bit 1)
WPEN
(SR bit 7)
WP
(pin 3)
Protected Blocks
Unprotected Blocks
STATUS Register
0
x
x
Protected
Protected
Protected
1
0
x
Protected
Writable
Writable
1
1
0 (low)
Protected
Writable
Protected
1
1
1 (high)
Protected
Writable
Writable
x = don’t care
DS22150B-page 12
2009-2013 Microchip Technology Inc.
25XX160C/D
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Name
Pin Number
CS
1
Chip Select Input
SO
2
Serial Data Output
WP
3
Write-Protect Pin
VSS
4
Ground
SI
5
Serial Data Input
SCK
6
Serial Clock Input
HOLD
7
Hold Input
VCC
8
Supply Voltage
3.1
Function
Chip Select (CS)
A low level on this pin selects the device. A high level
deselects the device and forces it into Standby mode.
However, a programming cycle which is already
initiated or in progress will be completed, regardless of
the CS input signal. If CS is brought high during a
program cycle, the device will go into Standby mode as
soon as the programming cycle is complete. When the
device is deselected, SO goes to the high-impedance
state, allowing multiple parts to share the same SPI
bus. A low-to-high transition on CS after a valid write
sequence initiates an internal write cycle. After powerup, a low level on CS is required prior to any sequence
being initiated.
3.2
Serial Output (SO)
The SO pin is used to transfer data out of the
25XX160C/D. During a read cycle, data is shifted out
on this pin after the falling edge of the serial clock.
3.3
The WP pin function is blocked when the WPEN bit in
the STATUS register is low. This allows the user to
install the 25XX160C/D in a system with WP pin
grounded and still be able to write to the STATUS
register. The WP pin functions will be enabled when the
WPEN bit is set high.
3.4
Serial Input (SI)
The SI pin is used to transfer data into the device. It
receives instructions, addresses and data. Data is
latched on the rising edge of the serial clock.
3.5
Serial Clock (SCK)
The SCK is used to synchronize the communication
between a master and the 25XX160C/D. Instructions,
addresses or data present on the SI pin are latched on
the rising edge of the clock input, while data on the SO
pin is updated after the falling edge of the clock input.
3.6
Hold (HOLD)
The HOLD pin is used to suspend transmission to the
25XX160C/D while in the middle of a serial sequence
without having to retransmit the entire sequence again.
It must be held high any time this function is not being
used. Once the device is selected and a serial
sequence is underway, the HOLD pin may be pulled
low to pause further serial communication without
resetting the serial sequence. The HOLD pin must be
brought low while SCK is low, otherwise the HOLD
function will not be invoked until the next SCK high-tolow transition. The 25XX160C/D must remain selected
during this sequence. The SI, SCK and SO pins are in
a high-impedance state during the time the device is
paused and transitions on these pins will be ignored. To
resume serial communication, HOLD must be brought
high while the SCK pin is low, otherwise serial
communication will not resume. Lowering the HOLD
line at any time will tri-state the SO line.
Write-Protect (WP)
This pin is used in conjunction with the WPEN bit in the
STATUS register to prohibit writes to the nonvolatile
bits in the STATUS register. When WP is low and
WPEN is high, writing to the nonvolatile bits in the
STATUS register is disabled. All other operations
function normally. When WP is high, all functions,
including writes to the nonvolatile bits in the STATUS
register operate normally. If the WPEN bit is set, WP
low during a STATUS register write sequence will
disable writing to the STATUS register. If an internal
write cycle has already begun, WP going low will have
no effect on the write.
2009-2013 Microchip Technology Inc.
DS22150B-page 13
25XX160C/D
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
8-Lead MSOP (150 mil)
XXXXXXT
YWWNNN
5LADI
9281L7
8-Lead PDIP
Example:
XXXXXXXX
T/XXXNNN
YYWW
25LC160D
I/P e3 1L7
0928
8-Lead SOIC
Example:
XXXXXXXT
XXXXYYWW
NNN
25LC16DI
SN e3 0928
1L7
8-Lead TSSOP
Example:
XXXX
TYWW
NNN
8-Lead 2x3 TDFN
XXX
YWW
NN
DS22150B-page 14
Example:
5LAD
I628
1L7
Example:
C64
928
17
2009-2013 Microchip Technology Inc.
25XX160C/D
1st Line Marking Codes
Part Number
TDFN
TSSOP
MSOP
25AA160C
5AAC
5AACT
25AA160D
5AAD
5AADT
C61
EF2
25LC160C
5LAC
5LACT
C54
C55
5LAD
5LADT
C64
C65
25LC160D
Note:
Legend: XX...X
T
Y
YY
WW
NNN
e3
I Temp.
E Temp.
C51
—
T = Temperature grade (I, E)
Part number or part number code
Temperature (I, E)
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code (2 characters for small packages)
Pb-free JEDEC designator for Matte Tin (Sn)
Note:
For very small packages with no room for the Pb-free JEDEC designator
e3 , the marking will only appear on the outer carton or reel label.
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2009-2013 Microchip Technology Inc.
DS22150B-page 15
25XX160C/D
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22150B-page 16
2009-2013 Microchip Technology Inc.
25XX160C/D
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2009-2013 Microchip Technology Inc.
DS22150B-page 17
25XX160C/D
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22150B-page 18
2009-2013 Microchip Technology Inc.
25XX160C/D
3
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